LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL COLOR LED LAMPS LSRF9UG2092 DATA SHEET DOC. NO : QW0905- LSRF9UG2092 REV. : A DATE : 15 - Jun.- 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LSRF9UG2092 Package Dimensions 3.0 4.0 4.2 5.2 6.7±0.5 1.5 MAX 9UG □0.5 TYP SRF 1 2 3 18.0MIN 2.0MIN 2.0MIN 2.54TYP 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE RED 2.54TYP 1 2 3 Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation 0° -30° 30° -60 ° 100% 75% 50% 60° 25% 0 25% 50% 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSRF9UG2092 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Absolute Maximum Ratings Symbol Parameter UNIT SRF 9UG Forward Current IF 30 30 mA Peak Forward Current Duty 1/10@10KHz IFP 90 60 mA Power Dissipation PD 75 75 mW Ir 10 10 μA Reverse Current @5V Electrostatic Discharge( * ) ESD 2000 V Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted AlGaInP Red AlGaInP Green Forward Dominant Spectral voltage wave halfwidth @20mA(V) length △λ nm λDnm Luminous intensity @20mA(mcd) Viewing angle 2θ 1/2 (deg) Min. Max. Min. Typ. Lens 630 20 1.5 2.4 65 120 60 574 20 1.7 2.6 65 160 60 White Diffused LSRF9UG2092 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/5 PART NO. LSRF9UG2092 Typical Electro-Optical Characteristics Curve SRF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 3.0 2.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 700 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSRF9UG2092 Page 4/5 Typical Electro-Optical Characteristics Curve 9UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity @20mA Normalize @25℃ Forward Voltage@20mA Normaliz @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity @20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) 500 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/5 PART NO. LSRF9UG2092 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11