LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High crrent transfer ratio ( CTR : MIN. 100% at IF = 10mA, VCE = 10V ) * Response time ( ton : TYP. 3µs at VCC = 10V, IC = 2mA, RL = 100Ω ) * Input-output isolation voltage LTV-4N35 series : Viso = 3,550Vrms LTV-4N37 series : Viso = 1,500Vrms * Dual-in-line package : LTV-4N35, LTV-4N37 * Wide lead spacing package : LTV-4N35M, LTV-4N37M * Surface mounting package : LTV-4N35S, LTV-4N37S * Tape and reel packaging : LTV-4N35S-TA, LTV-4N37S-TA, LTV-4N35S-TA1, LTV-4N37S-TA1 * UL approved ( No. E113898 ) * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533-1 ) * FIMKO approved ( No. 193422-01 ) * NEMKO approved ( No. P96103013 ) * DEMKO approved ( No. 303985 ) * SEMKO approved ( No. 9646047 / 01-30 ) * VDE approved ( No. 094722 ) Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 1 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N35 : LTV-4N37 : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 2 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N35M : LTV-4N37M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 3 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N35S : LTV-4N37S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 4 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS LTV-4N35S-TA , LTV-4N37S-TA : LTV-4N35S-TA1 , LTV-4N37S-TA1 : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Page : 5 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER INPUT OUTPUT SYMBOL RATING UNIT Forward Current IF 60 mA Reverse Voltage VR 6 V Power Dissipation P 100 mW Collector - Emitter Voltage VCEO 30 V Emitter - Collector Voltage VECO 7 V Collector - Base Voltage VCBO 70 V Collector Current IC 100 mA Collector Power Dissipation PC 300 mW Ptot 350 mW Total Power Dissipation LTV-4N35 series *1 Isolation Voltage 3,550 Viso LTV-4N37 series Vrms 1,500 Operating Temperature Topr -55 ~ +100 °C Storage Temperature Tstg -55 ~ +150 °C Tsol 260 °C *2 Soldering Temperature *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector, emitter and base on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 6 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER INPUT SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Forward Voltage VF — 1.2 1.5 V IF=10mA Reverse Current IR — — 10 µA VR=4V Terminal Capacitance Ct — 50 — pF V=0, f=1KHz — — 50 nA VCE=10V, IF=0 — — 500 µA VCE=30V, IF=0 Collector Dark Current Ta=25°C ICEO Ta=100°C Collector-Emitter Breakdown Voltage BVCEO 30 — — V IC=0.1mA IF=0 Emitter-Collector Breakdown Voltage BVECO 7 — — V IE=10µA IF=0 Collector-Base Breakdown Voltage BVCBO 70 — — V IC=0.1mA IF=0 IC 10 — — mA CTR 100 — — % Collector-Emitter Saturation Voltage VCE(sat) — — 0.3 V IF=50mA IC=2mA Isolation Resistance Riso — Ω DC500V 40 ~ 60% R.H. Floating Capacitance Cf — 1 2.5 pF V=0, f=1MHz Response Time (Turn-on) ton — 3 10 µs Response Time (Turn-off) toff — 3 10 µs OUTPUT Collector Current * Current Transfer Ratio TRANSFER 5×1010 1×1011 CHARACTERISTICS * CTR = IF=10mA VCE=10V VCC=10V, IC=2mA RL=100Ω IC × 100% IF Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 7 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector Power dissipation Pc (mW) Forward current IF (mA) 100 80 60 40 20 0 -55 -25 0 25 50 75 100 125 400 300 200 100 0 -55 -25 0 25 50 75 100 125 o o Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Forward Current vs. Forward Voltage Fig.4 Current Transfer Ratio vs. Forward Current 500 Current transfer ratio CTR (%) Forward current I F(mA) o Ta= 75 C o 50 C 200 o 25 oC 0C o -25 C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 V = 10V o Ta= 25 C 140 120 100 60 40 20 3.0 Forward voltage VF (V) Fig.5 Collector Current vs. Collector-emitter Voltage R = 80 100k 0 0.1 0.2 0.5 1 1 0 160 100k 5 10 20 2 50 100 Forward current IF (mA) o Fig.6 Relative Current Transfer Ratio vs. Ambient Temperature Ta= 25 C 30 Collector current Ic (mA) 10mA 20 5mA 10 2mA 0 0 5 10 15 Collector-emitter voltage V (V) Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Relative current transfer ratio (%) 150 Pc(MAX.) IF= 15mA I F= 10mA VCE= 10V 100 50 0 -55 -25 0 25 50 75 100 o Ambient temperature Ta ( C) Page : 8 of 9 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature Fig.8 Collector Dark Current vs. Ambient Temperature -6 10 I F= 50mA Ic= 2mA 0.10 Collector dark current ICEO (A) Collector-emitter saturation voltage V (sat) (V) 0.12 0.08 0.06 0.04 0.02 0 -55 5 5 -8 10 5 -9 10 5 -10 10 5 -11 10 5 -12 10 5 -13 10 -25 0 25 50 75 100 -55 40 60 100 100 125 Fig.10 Frequency Response 5 V = 10V Ic= 2mA o Ta= 25 C V = 5V Ic= 2mA o Ta= 25 C tf tr Voltage gain Av (dB) Response time ( s) 20 Ambient temperature Ta ( C) Fig.9 Response Time vs. Load Resistance td 20 10 5 2 1 ts 0 -5 RL= 10k 100 -10 1k -15 0.5 0.2 0.05 0.1 0.2 0.5 1 2 -20 0.5 1 5 10 20 50 Load resistance RL (k ) 7 5 10 20 50 100 200 500 Test Circuit for Response Time Ic= 0.5mA o Ta= 25 C 1mA 6 2 Frequency f (kHz) Fig.11 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE(sat) -25 o o Ambient temperature Ta ( C) 200 100 50 V = 10V -7 10 Vcc Input RD RL Input Output Output 10% 2mA 90% 5 3mA 5mA 7mA 4 ts td tr 3 tf Test Circuit for Frequency Response 2 Vcc 1 RD 0 0 5 10 RL Output 15 Forward current IF(mA) Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 9 of 9