LESHAN RADIO COMPANY, LTD. Noninverting Buffer / CMOS Logic Level Shifter L74VHC1G50 The L74VHC1G50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The L74VHC1G50 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the L74VHC1G50 to be used to interface 5 V circuits to 3 V circuits. • High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V • Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • TTL–Compatible Inputs: V IL = 0.8 V; V IH = 2.0 V • CMOS–Compatible Outputs: V OH > 0.8 V CC ; V OL < 0.1 V CC @Load • Power Down Protection Provided on Inputs and Outputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 104; Equivalent Gates = 26 MARKING DIAGRAMS 5 4 1 2 VLd 3 SC–70/SC–88A/SOT–353 DF SUFFIX Pin 1 d = Date Code 5 Figure 1. Pinout (Top View) 4 VLd 1 2 3 SOT–23/TSOP–5/SC–59 DT SUFFIX PIN ASSIGNMENT 1 2 3 4 5 NC IN A GND OUT Y V CC Figure 2. Logic Symbol Pin 1 d = Date Code FUNCTION TABLE Inputs A L H Output Y L H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1/6 LESHAN RADIO COMPANY, LTD. L74VHC1G50 MAXIMUM RATINGS Symbol V CC V IN V OUT Parameter Value Unit – 0.5 to + 7.0 V – 0.5 to +7.0 V V CC=0 – 0.5 to +7.0 V High or Low State –0.5 to V cc + 0.5 I IK Input Diode Current –20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC–88A, TSOP–5 200 mW θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias + 150 °C T stg Storage temperature –65 to +150 °C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage DC Input Voltage DC Output Voltage TA t r ,t f Operating Temperature Range Input Rise and Fall Time V CC = 0 High Low State V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE V IN V OUT Min Max Unit 3.0 0.0 0.0 0.0 – 55 0 0 5.5 5.5 5.5 V CC + 125 100 20 V V V °C ns/V 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature 2/6 LESHAN RADIO COMPANY, LTD. L74VHC1G50 DC ELECTRICAL CHARACTERISTICS V CC Symbol V IH Parameter Minimum High–Level Test Conditions Input Voltage V IL Maximum Low–Level Input Voltage V OH Minimum High–Level Output Voltage V IN = V IH or V IL V OL Maximum Low–Level Output Voltage V IN = V IH or V IL V IN = V IH or V IL I OH = – 50 µA (V) 2.0 T A = 25°C T A < 85°C –55°C<TA<125°C Min Typ Max Min Max Min Max Unit 1.5 1.5 1.5 V 3.0 4.5 2.1 3.15 2.1 3.15 2.1 3.15 5.5 2.0 3.85 3.85 3.85 0.5 0.5 0.5 3.0 4.5 0.9 1.35 0.9 1.35 0.9 1.35 5.5 1.65 1.65 1.65 V V V IN = V IH or V IL I OH = –4 mA I OH = –8 mA V IN = V IH or V IL I OL = 50 µA 3.0 4.5 2.9 4.4 3.0 4.5 2.58 3.94 3.0 4.5 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 V 3.0 4.5 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 I IN Maximum Input V IN = V IH or V IL I OL = 4 mA I OL = 8 mA V IN = 5.5 V or GND I CC Leakage Current Maximum Quiescent V IN = V CC or GND 5.5 2.0 20 40 µA I CCT Supply Current Quiescent Supply Input: V IN = 3.4 V 5.5 1.35 1.50 1.65 mA I OPD Current Output Leakage V OUT = 5.5 V 0.0 0.5 5.0 10 µA 3.0 4.5 0 to5.5 0.36 0.36 ±0.1 0.44 0.44 ±1.0 0.52 0.52 ±1.0 µA Current AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns T A = 25°C Symbol Parameter t PLH , Maximum t PHL C IN C PD Propagation Delay, Input A to Y Test Conditions V CC = 3.3± 0.3 V C L = 15 pF T A < 85°C –55°C<TA<125°C Typ 4.5 Max 10.0 C L = 50 pF 6.3 13.5 15.0 17.5 V CC = 5.0± 0.5 V C L = 15 pF C L = 50 pF 3.5 4.3 6.7 7.7 7.5 8.5 8.5 9.5 5 10 10 10 Maximum Input Capacitance Power Dissipation Capacitance (Note 6) Min Typical @ 25°C, V 12 Min CC Max 11.0 Min Max Unit 13.0 ns pF = 5.0 V pF 6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no– load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC . 3/6 LESHAN RADIO COMPANY, LTD. L74VHC1G50 3.0V V OH Y V OL *Includes all probe and jig capacitance Figure 4. Switching Waveforms Figure 5. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Temp Order Number Circuit Device Range Technology Indicator Function Identifier Package Suffix Tape & Reel Suffix L74VHC1G50DFT1 L 74 VHC1G 50 DF T1 L74VHC1G50DFT2 L 74 VHC1G 50 DF T2 L74VHC1G50DFT4 L 74 VHC1G 50 DF T4 L74VHC1G50DTT1 L 74 VHC1G 50 DT T1 L74VHC1G50DTT3 L 74 VHC1G 50 DT T3 Package Type (Name/SOT#/ Common Name) SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SOT–23/TSOPS/ SC–59 SOT–23/TSOPS/ SC–59 Tape and Reel Size 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 4/6 LESHAN RADIO COMPANY, LTD. L74VHC1G50 PACKAGE DIMENSIONS SC70−5/SC−88A/SOT−353 DF SUFFIX A G 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 4 DIM A B C D G H J K N S −B− S 1 2 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches 5/6 LESHAN RADIO COMPANY, LTD. L74VHC1G50 PACKAGE DIMENSIONS SOT23−5/TSOP−5/SC59−5 DT SUFFIX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D S 5 4 1 2 3 B L G DIM A B C D G H J K L M S A J C 0.05 (0.002) H M K MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm inches 6/6