LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1G The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium. • hFE, 100–300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel • Device Marking: LMBT3904DW1T1G = MA 6 4 1 2 3 SOT-363 (3) (2) (1) Q1 Q2 (4) Featrues 5 (5) (6) z We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD HBM>16000, MM>2000 V Symbol Max Unit PD 150 mW RJA 833 °C/W TJ, Tstg –55 to +150 °C Rating Collector Current – Continuous Electrostatic Discharge ORDERING INFORMATION Marking Shipping LMBT3904DW1T1G MA 3000 Units/Reel LMBT3904DW1T3G MA 10000 Units/Reel Device THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. 1/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 – 60 – 6.0 – – 50 – 50 40 70 100 60 30 – – 300 – – – – 0.2 0.3 0.65 – 0.85 0.95 300 – – 4.0 – 8.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) – Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo MHz pF pF 2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤2.0%. 2/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small–Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) NF Min Max 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 – – 5.0 4.0 Unit kΩ X 10–4 – mhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc) td – 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr – 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts – 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf – 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 DUTY CYCLE = 2% 10 k -0.5 V t1 10 < t1 < 500 s ns +3 V +10.9 V 275 10 k 0 Cs < 4 pF* < 1 ns ns 1N916 -9.1 V′ Cs < 4 pF* < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit 3/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 Q, CHARGE (pC) Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 5.0 7.0 10 20 30 50 70 100 30 20 40 V 15 V 10 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 7 5 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time IC/IB = 10 IC/IB = 20 50 IC/IB = 10 30 20 7 5 50 70 100 200 IC/IB = 10 30 20 10 30 IC/IB = 20 100 70 50 7 5 20 VCC = 40 V IB1 = IB2 300 200 10 5.0 7.0 10 200 500 t′s = ts - 1/8 tf IB1 = IB2 100 70 2.0 3.0 1.0 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 20 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 tr @ VCC = 3.0 V 50 200 500 t r, RISE TIME (ns) TIME (ns) 2.0 3.0 Figure 4. Charge Data IC/IB = 10 1.0 1.0 Figure 3. Capacitance 100 70 300 200 QA IC, COLLECTOR CURRENT (mA) 300 200 t s′ , STORAGE TIME (ns) 20 30 40 QT 300 200 REVERSE BIAS VOLTAGE (VOLTS) 500 1.0 1000 700 500 100 70 50 t f , FALL TIME (ns) CAPACITANCE (pF) 2000 5.0 7 5 VCC = 40 V IC/IB = 10 3000 7.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 4/10 200 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 12. Output Admittance h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 11. Current Gain 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio 5/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 200 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25°C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 +25°C TO +125°C VB FOR VBE(sat) -1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) 1.2 1.0 2.0 5.0 10 20 50 100 200 -2.0 0 20 40 60 80 100 120 140 180 200 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 6/10 LESHAN RADIO COMPANY, LTD. LMBT3904DW1T1G SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 K H 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm 7/10