LMBT4403LT1G

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LMBT4403LT1G
S-LMBT4403LT1G
• We declare that the material of product compliance with RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
ORDERING INFORMATION
Device
Marking
LMBT4403LT1G
S-LMBT4403LT1G
LMBT4403LT3G
S-LMBT4403LT3
Shipping
1
2T
3000/Tape & Reel
2T
10000/Tape & Reel
2
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
V CEO
– 40
Vdc
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V
– 40
– 5.0
Vdc
Vdc
– 600
mAdc
Collector Current — Continuous
EBO
IC
3
COLLECTOR
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR –5 Board (1)
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
T A =25 °C
Derate above 25°C
2
EMITTER
Thermal Resistance Junction to Ambient
R θJA
556
°C/W
Total Device Dissipation
PD
300
mW
R θJA
T J , T stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
Alumina Substrate (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
LMBT4403LT1G = 2T
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
– 40
—
– 40
—
– 5.0
—
—
– 0.1
—
– 0.1
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –0.1mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –0.1mAdc, I C = 0)
Base Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Collector Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Vdc
V (BR)CBO
Vdc
V (BR)EBO
Vdc
µAdc
I BEV
µAdc
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G ;S-LMBT4403LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
30
60
100
100
20
––
––
––
300
––
––
––
– 0.4
– 0.75
– 0.75
––
– 0.95
– 1.3
200
––
––
8.5
––
30
1.5
15
Unit
ON CHARACTERISTICS
DC Current Gain
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –150 mAdc, V CE = –2.0 Vdc)(3)
(I C = –500 mAdc, V CE = –2.0 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(I C = –150mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
Base–Emitter Saturation Voltage (3)
(I C = –150 mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
hFE
––
VCE(sat)
V
Vdc
Vdc
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –20mAdc, V CE= –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(V CB= –10 Vdc, I E = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(V BE = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
fT
C
MHz
pF
cb
C eb
pF
h ie
kΩ
h re
X 10
0.1
8.0
60
500
1.0
100
15
h fe
–4
—
µmhos
h oe
SWITCHING CHARACTERISTICS
Delay Time
(V CC = – 30 Vdc, V EB = –2.0 Vdc,
td
—
Rise Time
I C = –150mAdc, I B1 = –15 mAdc)
td
—
20
ns
Storage Time
(V CC = –30 Vdc, I C = –150 mAdc,
ts
—
225
ns
Fall Time
I B1 = I B2 = –15 mAdc)
tf
—
30
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
– 30 V
– 30 V
200
+2.0V
<2.0 ns
200
< 20 ns
+ 14V
1.0 k
1.0 k
0
0
C S* < 10 pF
–16 V
1.0 to 100µs,
DUTY CYCLE = 2%
Figure 1. Turn–On Time
1N916
–16 V
C S*< 10 pF
1.0 to 100µs,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 100°C
30
10
7.0
C eb
10
7.0
C cb
5.0
3.0
2.0
1.0
0.7
0.5
QT
0.3
3.0
2.0
0.1
QA
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
10
20
30
50
70
100
200
REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
300
500
100
100
I C /I B = 10
70
t r, RISE TIME (ns)
t r @V CC=30V
t r @V CC=10V
30
t d@VBE(off) = 2.0V
t d@VBE(off) = 0V
20
V CC= 30V
I C / I B =10
70
50
50
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
300
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
200
I C/I B = 20
t s , RISE TIME (ns)
t , TIME (ns)
V CC = 30 V
I C / I B = 10
5.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
100
I C/I B = 10
70
50
t s’ = t s – 1/8 t f
I B1 = I B2
30
20
10
20
30
50
70
100
200
300
500
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Rev.O 3/6
500
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = –10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1.0 kHz
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
I C = 1.0 mA, R S = 430Ω
I C = 500 µA, R S = 560Ω
6
I C = 50 µA, R S = 2.7kΩ
I C = 100 µA, R S = 1.6 kΩ
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
I C = 50 µA
100 µA
500 µA
1.0 mA
6
4
2
0
0.010.02 0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
50
100
50 100
200
500
1k
2k
5k
10k
20k
f , FREQUENCY (kHz)
R S, SOURCE RESISTANCE (Ω)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
50k
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
100
700
50
h ie, INPUT IMPEDANCE (kΩ)
1000
h fe, CURRENT GAIN
500
300
200
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100
70
50
MMBT4403LT1 UNIT 2
20
10
5
2
1
0.5
0.2
0.1
30
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
Figure 11. Input Impedance
20
10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.1
10
h oe , OUTPUT ADMITTANCE ( µmhos)
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
MMBT4403LT1 UNIT 1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
10
500
100
50
20
MMBT4403LT1 UNIT 1
10
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
Rev.O 4/6
10
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
STATIC CHARACTERISTICS
h FE , NORMALIZED CURRENT GAIN
3.0
V CE= 1.0 V
V CE= 10 V
2.0
T J = 125°C
25°C
1.0
–55°C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
300
500
I C , COLLECTOR CURRENT (mA)
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
I C=1.0 mA
10 mA
100mA
500mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05
0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
I B , BASE CURRENT (mA)
Figure 15. Collector Saturation Region
+ 0.5
T J = 25°C
V, VOLTAGE ( VOLTS )
0
V BE(sat) @ I C /I B =10
0.8
0.6
COEFFICIENT (mV/ °C)
10
V BE @ V CE =1.0 V
0.4
0.2
V CE(sat) @ I C /I B =10
θ VC for VCE(sat)
– 0.5
–1.0
–1.5
θ VS for V BE
–2.0
– 2.5
0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
Rev.O 5/6
500
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 6/6