LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT4403LT1G S-LMBT4403LT1G • We declare that the material of product compliance with RoHS requirements. • S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Device Marking LMBT4403LT1G S-LMBT4403LT1G LMBT4403LT3G S-LMBT4403LT3 Shipping 1 2T 3000/Tape & Reel 2T 10000/Tape & Reel 2 SOT– 23 (TO–236AB) MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating V CEO – 40 Vdc Collector–Base Voltage V CBO Emitter–Base Voltage V – 40 – 5.0 Vdc Vdc – 600 mAdc Collector Current — Continuous EBO IC 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR –5 Board (1) Symbol Max Unit PD 225 mW 1.8 mW/°C T A =25 °C Derate above 25°C 2 EMITTER Thermal Resistance Junction to Ambient R θJA 556 °C/W Total Device Dissipation PD 300 mW R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C Alumina Substrate (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBT4403LT1G = 2T ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max – 40 — – 40 — – 5.0 — — – 0.1 — – 0.1 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) V (BR)CEO (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –0.1mAdc, I C = 0) Base Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Collector Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) Vdc V (BR)CBO Vdc V (BR)EBO Vdc µAdc I BEV µAdc I CEX 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LMBT4403LT1G ;S-LMBT4403LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 30 60 100 100 20 –– –– –– 300 –– –– –– – 0.4 – 0.75 – 0.75 –– – 0.95 – 1.3 200 –– –– 8.5 –– 30 1.5 15 Unit ON CHARACTERISTICS DC Current Gain (I C = –0.1 mAdc, V CE = –1.0 Vdc) (I C = –1.0 mAdc, V CE = –1.0 Vdc) (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –150 mAdc, V CE = –2.0 Vdc)(3) (I C = –500 mAdc, V CE = –2.0 Vdc)(3) Collector–Emitter Saturation Voltage(3) (I C = –150mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) Base–Emitter Saturation Voltage (3) (I C = –150 mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) hFE –– VCE(sat) V Vdc Vdc BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –20mAdc, V CE= –10 Vdc, f = 100 MHz) Collector–Base Capacitance (V CB= –10 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance (V BE = –0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) fT C MHz pF cb C eb pF h ie kΩ h re X 10 0.1 8.0 60 500 1.0 100 15 h fe –4 — µmhos h oe SWITCHING CHARACTERISTICS Delay Time (V CC = – 30 Vdc, V EB = –2.0 Vdc, td — Rise Time I C = –150mAdc, I B1 = –15 mAdc) td — 20 ns Storage Time (V CC = –30 Vdc, I C = –150 mAdc, ts — 225 ns Fall Time I B1 = I B2 = –15 mAdc) tf — 30 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS – 30 V – 30 V 200 +2.0V <2.0 ns 200 < 20 ns + 14V 1.0 k 1.0 k 0 0 C S* < 10 pF –16 V 1.0 to 100µs, DUTY CYCLE = 2% Figure 1. Turn–On Time 1N916 –16 V C S*< 10 pF 1.0 to 100µs, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 2. Turn–Off Time Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LMBT4403LT1G;S-LMBT4403LT1G TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 100°C 30 10 7.0 C eb 10 7.0 C cb 5.0 3.0 2.0 1.0 0.7 0.5 QT 0.3 3.0 2.0 0.1 QA 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 300 500 100 100 I C /I B = 10 70 t r, RISE TIME (ns) t r @V CC=30V t r @V CC=10V 30 t d@VBE(off) = 2.0V t d@VBE(off) = 0V 20 V CC= 30V I C / I B =10 70 50 50 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 200 I C/I B = 20 t s , RISE TIME (ns) t , TIME (ns) V CC = 30 V I C / I B = 10 5.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 100 I C/I B = 10 70 50 t s’ = t s – 1/8 t f I B1 = I B2 30 20 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Rev.O 3/6 500 LESHAN RADIO COMPANY, LTD. LMBT4403LT1G;S-LMBT4403LT1G SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE V CE = –10 Vdc, T A = 25°C Bandwidth = 1.0 Hz 10 10 f = 1.0 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 I C = 1.0 mA, R S = 430Ω I C = 500 µA, R S = 560Ω 6 I C = 50 µA, R S = 2.7kΩ I C = 100 µA, R S = 1.6 kΩ 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 I C = 50 µA 100 µA 500 µA 1.0 mA 6 4 2 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10k 20k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (Ω) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50k h PARAMETERS (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100 700 50 h ie, INPUT IMPEDANCE (kΩ) 1000 h fe, CURRENT GAIN 500 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 MMBT4403LT1 UNIT 2 20 10 5 2 1 0.5 0.2 0.1 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.1 10 h oe , OUTPUT ADMITTANCE ( µmhos) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) MMBT4403LT1 UNIT 1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 10 500 100 50 20 MMBT4403LT1 UNIT 1 10 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance Rev.O 4/6 10 LESHAN RADIO COMPANY, LTD. LMBT4403LT1G;S-LMBT4403LT1G STATIC CHARACTERISTICS h FE , NORMALIZED CURRENT GAIN 3.0 V CE= 1.0 V V CE= 10 V 2.0 T J = 125°C 25°C 1.0 –55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 I C=1.0 mA 10 mA 100mA 500mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 15. Collector Saturation Region + 0.5 T J = 25°C V, VOLTAGE ( VOLTS ) 0 V BE(sat) @ I C /I B =10 0.8 0.6 COEFFICIENT (mV/ °C) 10 V BE @ V CE =1.0 V 0.4 0.2 V CE(sat) @ I C /I B =10 θ VC for VCE(sat) – 0.5 –1.0 –1.5 θ VS for V BE –2.0 – 2.5 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients Rev.O 5/6 500 LESHAN RADIO COMPANY, LTD. LMBT4403LT1G;S-LMBT4403LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 6/6