® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 2.0 Rev. 2.1 Rev. 2.2 Description Initial Issue Revised Package Outline Dimension(TSOP-II) Revised ICC and ISB1 Revised Test Condition of ISB1/IDR Added E and I grade Revised ABSOLUTE MAXIMUN RATINGS Adding PKG type : 36-ball 6mm x 8mm TFBGA Revised Test Condition of ICC Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Sep.5.2006 Apr.12.2007 Jun.23.2007 Mar.31.2008 Apr.17.2009 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 FEATURES GENERAL DESCRIPTION Fast access time : 10/12/15/20/25ns Very low power consumption: Operating current(Normal version): 180/160/140/80/70mA(MAX.) Standby current: 12mA(MAX. for 10/12/15ns) 5mA(MAX. for 20/25ns) 100µA( (MAX. for 20/25ns LL version) Single 3.3V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 2.0V (MIN.) Green package available Package : 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 44-pin 400 mil TSOP-II 36-ball 6mm x 8mm TFBGA The LY61L5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L5128 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY61L5128 operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Operating Family Temperature 0 ~ 70℃ LY61L5128 -20 ~ 80℃ LY61L5128(E) -40 ~ 85℃ LY61L5128(I) 0 ~ 70℃ LY61L5128 -20 ~ 80℃ LY61L5128(E) -40 ~ 85℃ LY61L5128(I) 0 ~ 70℃ LY61L5128(LL) LY61L5128(LLE) -20 ~ 80℃ LY61L5128(LLI) -40 ~ 85℃ Vcc Range Speed 3.15/3.0 ~ 3.6V 3.15/3.0 ~ 3.6V 3.15/3.0 ~ 3.6V 3.0 ~ 3.6V 3.0 ~ 3.6V 3.0 ~ 3.6V 3.0 ~ 3.6V 3.0 ~ 3.6V 3.0 ~ 3.6V 10/12/15ns 10/12/15ns 10/12/15ns 20/25ns 20/25ns 20/25ns 20/25ns 20/25ns 20/25ns Power Dissipation Standby(ISB1,MAX.) Operating(Icc,MAX.) 12mA 180/160/140mA 12mA 180/160/140mA 12mA 180/160/140mA 5mA 80/70mA 5mA 80/70mA 5mA 80/70mA 100µA 80/70mA 100µA 80/70mA 100µA 80/70mA Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A18 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# WE# OE# CONTROL CIRCUIT 512Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 PIN CONFIGURATION NC 1 44 NC NC 2 43 NC A4 3 42 NC A3 4 41 A5 A2 5 40 A6 A1 6 39 A7 A0 7 38 A8 37 OE# 36 DQ7 35 DQ6 34 Vss 33 Vcc 32 DQ5 31 DQ4 30 8 9 DQ1 10 Vcc 11 Vss 12 DQ2 13 DQ3 14 WE# 15 A18 16 A17 17 A16 18 27 A12 A15 19 26 A13 A14 20 25 NC 21 NC 22 LY61L5128 CE# DQ0 A A0 A1 NC A3 A6 A8 B DQ4 A2 WE# A4 A7 DQ0 A9 C DQ5 NC A5 29 A10 D Vss Vcc 28 A11 E Vcc Vss F DQ6 A17 DQ2 NC G DQ7 OE# CE# A16 A15 DQ3 24 NC H 23 NC TSOP-II A11 A9 A8 A13 WE# A17 A15 Vcc A18 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 LY61L5128 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 DQ0 A0 A1 A2 A3 TSOP-I/STSOP Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 A18 A9 A10 1 2 A11 A12 3 4 TFBGA DQ1 A13 A14 5 6 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 4.6 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# H L L L OE# X H L X WE# X H H L SUPPLY CURRENT ISB1 ICC ICC ICC I/O OPERATION High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Supply Voltage VCC Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage VIH *2 VIL ILI TEST CONDITION 10/12 15/20/25 *1 ILO VOH VOL Average Operating Power supply Current ICC Standby Power Supply Current ISB1 VCC ≧ VIN ≧ VSS VCC ≧ VOUT ≧ VSS, Output Disabled IOH = -4mA IOL = 8mA 10 12 15 20 25 10/12/15 CE# ≧VCC - 0.2V, 20/25 others at 0.2V or VCC - 0.2V 20/25LL Cycle time = Min. CE# = VIL , II/O = 0mA others at VIH or VIL MIN. 3.15 3.0 2.2 - 0.3 -1 *4 MAX. 3.6 3.6 VCC+0.3 0.6 1 UNIT V V V V µA -1 - 1 µA 2.4 - 50 45 0.5 20 0.4 180 160 140 80 70 12 5 5* 6 100* V V mA mA mA mA mA mA mA µA Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 TYP. 3.3 3.3 - ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃ 5. 1mA for special request 6. 50µA for special request CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. MAX 8 10 - UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change SYM. LY61L5128 -10 LY61L5128 -12 LY61L5128 -15 LY61L5128 -20 LY61L5128 UNIT -25 MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. tRC 10 12 15 20 25 ns tAA 10 12 15 20 25 ns tACE 10 12 15 20 25 ns tOE 5 6 7 8 9 ns tCLZ* 2 3 4 4 4 ns tOLZ* 0 0 0 0 0 ns tCHZ* 5 6 7 8 9 ns tOHZ* 5 6 7 8 9 ns tOH 3 3 3 3 3 ns (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z SYM. LY61L5128 -10 LY61L5128 -12 LY61L5128 -15 LY61L5128 -20 tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. 10 12 15 20 25 8 10 12 16 20 8 10 12 16 20 0 0 0 0 0 8 9 10 11 12 0 0 0 0 0 6 7 8 9 10 0 0 0 0 0 2 3 4 5 6 6 7 8 9 10 *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 LY61L5128 UNIT -25 ns ns ns ns ns ns ns ns ns ns ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z Data Valid Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low. 3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 High-Z ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW (4) tDH Data Valid Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tWP WE# tWHZ Dout High-Z (4) tDW tDH Data Valid Din Notes : 1.WE#, CE# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION VCC for Data Retention VDR CE# ≧ VCC - 0.2V 10/12/15 VCC = 2.0V CE# ≧ VCC - 0.2V Data Retention Current IDR 20/25 others at 0.2V or VCC - 0.2V 20/25LL See Data Retention Chip Disable to Data tCDR Waveforms (below) Retention Time Recovery Time tR tRC* = Read Cycle Time MIN. 2.0 - TYP. 0.5 10 MAX. 3.6 1 50 UNIT V mA mA µA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM VDR ≧ 2.0V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 PACKAGE OUTLINE DIMENSION 32 pin 8mm x 20mm TSOP-I Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) MM(REF) 0.047 (MAX) 0.004 ±0.002 0.039 ±0.002 0.008 + 0.002 - 0.001 0.005 (TYP) 0.724 ±0.004 0.315 ±0.004 0.020 (TYP) 0.787 ±0.008 0.0197 ±0.004 0.0315 ±0.004 0.003 (MAX) o o 0 ～5 1.20 (MAX) 0.10 ±0.05 1.00 ±0.05 0.20 + 0.05 -0.03 0.127 (TYP) 18.40 ±0.10 8.00 ±0.10 0.50 (TYP) 20.00 ±0.20 0.50 ±0.10 0.08 ±0.10 0.076 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 32 pin 8mm x 13.4mm STSOP Package Outline Dimension HD cL 12° (2x) 32 16 17 12° (2x) b E e 1 "A" Seating Plane D y 12° (2X) 16 17 0.254 A2 c A GAUGE PLANE A1 0 SEATING PLANE "A" DATAIL VIEW 1 32 UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) MM(REF) 0.049 (MAX) 0.005 ±0.002 0.039 ±0.002 0.008 ±0.01 0.005 (TYP) 0.465 ±0.004 0.315 ±0.004 0.020 (TYP) 0.528±0.008 0.0197 ±0.004 0.0315 ±0.004 0.003 (MAX) o o 0 ～5 1.25 (MAX) 0.130 ±0.05 1.00 ±0.05 0.20±0.025 0.127 (TYP) 11.80 ±0.10 8.00 ±0.10 0.50 (TYP) 13.40 ±0.20. 0.50 ±0.10 0.8 ±0.10 0.076 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 L 12° (2X) L1 ® LY61L5128 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 2.2 θ 44-pin 400mil TSOP-Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 3 6 0 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 ® LY61L5128 Rev. 2.2 512K X 8 BIT HIGH SPEED CMOS SRAM 36 ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 ® LY61L5128 Rev. 2.2 512K X 8 BIT HIGH SPEED CMOS SRAM ORDERING INFORMATION LY61L5128 U V - WW XX Y Z Z : Packing Type Blank : Tube or Tray T : Tape Reel Y : Temperature Range Blank : (Commercial) 0°C ~ 70°C E : (Extended) -20°C ~ +80°C I : (Industrial) -40°C ~ +85°C XX : Power Type LL : Ultra Low Power WW : Access Time(Speed) V : Lead Information L : Green Package U : Package Type L : 32-pin 8 mm x 20 mm TSOP-I R : 32-pin 8 mm x 13.4 mm STSOP M : 44-pin 400 mil TSOP-II G : 36-ball 6 mm x 8 mm TFBGA Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13 ® LY61L5128 Rev. 2.2 512K X 8 BIT HIGH SPEED CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 14