® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Rev. 2.4 Rev. 2.5 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec. Added P-DIP PKG Revised Test Condition of ISB1/IDR Adding PKG type : 44 TSOP-II Adding SL Spec. Revised ABSOLUTE MAXIMUN RATINGS Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Deleted -35ns Spec. Revised VDR Revised PACKAGE OUTLINE DIMENSION in page 11/12/13/14 Revised ORDERING INFORMATION in page 16 Deleted PKG type : 44 TSOP-II Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Jul.19.2005 Oct.31.2005 Sep.20.2006 Jan.12.2007 May.14.2007 Jun.4.2007 Jul.11.2007 Mar.30.2009 Sep.11.2009 May.7.2010 Aug.30.2010 Feb.21.2012 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 FEATURES GENERAL DESCRIPTION Fast access time : 45/55/70ns Low power consumption: Operating current : 45/40/30mA (TYP.) Standby current : 5μA@5V(TYP.) LL/SL version 3μA@3V(TYP.) SL version Single 4.5V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) Green package available Package : 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA 32-pin 600 mil P-DIP The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY625128 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY625128 operates from a single power supply of 4.5V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Operating Family Temperature 0 ~ 70℃ LY625128(LL) -20 ~ 80℃ LY625128(LLE) -40 ~ 85℃ LY625128(LLI) 0 ~ 70℃ LY625128(SL) LY625128(SLE) -20 ~ 80℃ -40 ~ 85℃ LY625128(SLI) Vcc Range Speed 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 45/55/70ns 45/55/70ns 45/55/70ns 45/55/70ns 45/55/70ns 45/55/70ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 5µA@5V 45/40/30mA 5µA@5V 45/40/30mA 5µA@5V 45/40/30mA 3µA@3V 5µA@5V 45/40/30mA 3µA@3V 5µA@5V 45/40/30mA 3µA@3V 5µA@5V 45/40/30mA Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A18 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# WE# OE# CONTROL CIRCUIT 512Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 PIN CONFIGURATION 1 32 Vcc A16 2 31 A15 A14 3 30 A17 A12 4 29 WE# A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 A3 9 A2 10 A1 11 22 CE# A0 12 21 DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 Vss 16 17 DQ3 LY625128 A18 25 A11 24 OE# 23 A10 A11 A9 A8 A13 WE# A17 A15 Vcc A18 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 LY625128 TSOP-I/STSOP SOP/P-DIP A A0 A1 NC A3 A6 A8 B DQ4 A2 WE# A4 A7 DQ0 C DQ5 NC A5 D Vss Vcc E Vcc Vss F DQ6 A17 DQ2 G DQ7 OE# CE# A16 A15 DQ3 H A18 A9 A10 1 2 A11 A12 3 4 TFBGA DQ1 A13 A14 5 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 DQ0 A0 A1 A2 A3 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 6.5 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# H L L L OE# X H L X WE# X H H L I/O OPERATION High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 SUPPLY CURRENT ISB1 ICC,ICC1 ICC,ICC1 ICC,ICC1 ® LY625128 Rev. 2.5 512K X 8 BIT LOW POWER CMOS SRAM DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -1mA Output Low Voltage VOL IOL = 2mA Cycle time = Min. - 45 CE# = VIL and CE2 = VIH , ICC - 55 II/O = 0mA - 70 Other pins at VIL or VIH Average Operating Power supply Current Cycle time = 1µs CE# = 0.2V and CE2≧VCC-0.2V, ICC1 II/O = 0mA Other pins at 0.2V or VCC - 0.2V LL/LLE/LLI CE# ≧VCC-0.2V *5 SL 25℃ Standby Power or CE2≦0.2V *5 ISB1 SLE Supply Current Others at 0.2V or *5 40℃ SLI VCC - 0.2V SL/SLE/SLI MIN. 4.5 2.4 - 0.2 -1 *4 MAX. 5.5 VCC+0.3 0.6 1 UNIT V V V µA -1 - 1 µA 2.4 - 45 0.4 70 V V mA - 40 60 mA - 30 50 mA - 4 10 mA - 5 50 µA - 3 10 µA - 3 10 µA - 5 25 µA Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP.) and TA = 25℃ 5. This parameter is measured at VCC = 3.0V Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 TYP. 5.0 - ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -2mA/4mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* LY625128-45 MIN. MAX. 45 45 45 25 10 5 20 20 10 - LY625128-55 MIN. MAX. 55 55 55 30 10 5 20 20 10 - LY625128-70 MIN. MAX. 70 70 70 35 10 5 25 25 10 - UNIT LY625128-45 MIN. MAX. 45 40 40 0 35 0 20 0 5 20 LY625128-55 MIN. MAX. 55 50 50 0 45 0 25 0 5 20 LY625128-70 MIN. MAX. 70 60 60 0 55 0 30 0 5 25 UNIT *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z Data Valid Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low. 3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 High-Z ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW (4) tDH Data Valid Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tWP WE# tWHZ Dout High-Z (4) tDW tDH Data Valid Din Notes : 1.WE#, CE# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION VCC for Data Retention VDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V LL VCC = 1.5V CE# ≧ VCC - 0.2V Data Retention Current IDR SL or CE2 ≦ 0.2V Other pins at 0.2V or VCC-0.2V SL See Data Retention Chip Disable to Data tCDR Waveforms (below) Retention Time Recovery Time tR tRC* = Read Cycle Time MIN. 1.5 - TYP. 2 MAX. 5.5 30 25℃ - 2 8 40℃ - 2 8 - 2 23 µA µA 0 - - ns tRC* - - ns DATA RETENTION WAVEFORM VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 UNIT V µA µA ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 PACKAGE OUTLINE DIMENSION 32 pin 450 mil SOP Package Outline Dimension UNIT SYM. A A1 A2 b c D E E1 e L L1 S y Θ INCH.(BASE) 0.120(MAX) 0.004(MIN) 0.116(MAX) 0.016(TYP) 0.008(TYP) 0.817(MAX) 0.445±0.006 0.555±0.025 0.050(TYP) 0.033±0.017 0.055±0.008 0.026(MAX) 0.004(MAX) o o 0 -10 MM(REF) 3.048(MAX) 0.102(MIN) 2.946(MAX) 0.406(TYP) 0.203(TYP) 20.75(MAX) 11.303±0.152 14.097±0.635 1.270(TYP) 0.838±0.432 1.397±0.203 0.660(MAX) 0.101(MAX) o o 0 -10 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 32 pin 8mm x 20mm TSOP-I Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) 0.047 (MAX) 0.004 ±0.002 0.039 ±0.002 0.009 ±0.002 0.006 ±0.002 0.724 ±0.008 0.315 ±0.008 0.020 (TYP) 0.787 ±0.008 0.024 ±0.004 0.0315 ±0.004 0.003 (MAX) o o 0 ～5 MM(REF) 1.20 (MAX) 0.10 ±0.05 1.00 ±0.05 0.22 ±0.05 0.155 ±0.055 18.40 ±0.20 8.00 ±0.20 0.50 (TYP) 20.00 ±0.20 0.60 ±0.10 0.08 ±0.10 0.08 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 32 pin 8mm x 13.4mm STSOP Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) 0.049 (MAX) 0.004 ±0.002 0.039 ±0.002 0.009 ±0.002 0.006 ±0.002 0.465 ±0.008 0.315 ±0.008 0.020 (TYP) 0.528±0.008 0.02 ±0.008 0.031 ±0.005 0.003 (MAX) o o 0 ～5 MM(REF) 1.25 (MAX) 0.10 ±0.05 1.00 ±0.05 0.22 ±0.05 0.155 ±0.055 11.80 ±0.20 8.00 ±0.20 0.50 (TYP) 13.40 ±0.20. 0.50 ±0.20 0.8 ±0.125 0.076 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 ® LY625128 Rev. 2.5 512K X 8 BIT LOW POWER CMOS SRAM 36 ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13 ® LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.5 32 pin 600 mil P-DIP Package Outline Dimension UNIT SYM. A1 A2 B D E E1 e eB L S Q1 INCH(BASE) MM(REF) 0.015(MIN) 0.155±0.005 0.018±0.005 1.650±0.01 0.600±0.010 0.545±0.005 0.100(TYP) 0.650±0.020 0.158±0.043 0.075±0.010 0.070±0.005 0.381(MIN) 3.937±0.127 0.457±0.127 41.910±0.254 15.240±0.254 13.843±0.127 2.540(TYP) 16.510±0.508. 4.013±1.092 1.905±0.254 1.778±0.127 Note : D/E1/S dimension do not include mold flash. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 14 ® LY625128 Rev. 2.5 512K X 8 BIT LOW POWER CMOS SRAM ORDERING INFORMATION Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 15 ® LY625128 Rev. 2.5 512K X 8 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 16