MTE8090M Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) ITEM SYMBOL CONDITIONS Power Output PO IF=20mA Forward Voltage VF IF=20mA Reverse Current IR VR=5V Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA Half Intensity Beam Angle IF=20mA θ Rise Time IFP=50mA Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T 60 40 30 20 10 0 SPECTRAL OUTPUT 0 OPTRANS RADIATION PATTERN 2 200 150 100 50 0 3 0 FORWARD VOLTAGE(V) 120 10 20 30 40 50 100 80 60 40 20 0 -90 60 -60 -30 0 30 60 90 BEAM ANGLE(deg.) FORWARD CURRENT(mA) 100 60 40 20 0 780 880 WAVELENGTH(nm) To purchase this part contact Marktech Optoelectronics at 800.984.5337 980 RELATIVE POWER OUTPUT(%) 60 50 40 30 20 10 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 140 3 120 2.5 FORWARD VOLTAGE(V) 80 FORWARD VOLTAGE vs TEMPERATURE IF=10mA POWER OUTPUT vs TEMPERATURE IF=10mA THERMAL DERATING CURVE FORWARD CURRENT(mA) UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) RATINGS ITEM SYMBOL 50 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP Reverse Voltage 5 VR Power Dissipation 100 PD -20 TO 85 Topr Operating Temp. -30 TO 100 Tstg Storage Temp. 100 Junction Temp. Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 1 UNIT mW 1.6 V 10 μA nm nm deg. μS μS pF %/℃ mV/℃ 120 RELATIVE POWER OUTPUT(%) 50 MAX 880 60 ±80 1.5 0.8 15 -0.5 -1.5 250 RELATIVE POWER OUTPUT(%) ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors FORWARD CURRENT(mA) FEATURES TYP 4.5 1.3 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS ② Anode ① Cathode Dimensions (Unit:mm) MIN 100 80 60 40 20 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 2 1.5 1 0.5 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) Marktech Optoelectronics www.marktechopto.com 11/24/2009 001-LSC880M3A.xls