MTE7410 Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) ITEM Power Output Forward Voltage Reverse Current Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle Rise Time Fall Time Junction Capacitance Temp. Coefficient of PO Temp. Coefficient of VF Dimensions (Unit:mm) SPECTRAL OUTPUT 50 40 30 20 10 0 pF %/℃ mV/℃ 200 100 1 2 3 100 80 60 40 20 0 0 FORWARD VOLTAGE(V) 10 20 30 40 50 -90 60 60 40 20 0 690 *1:Tw=10uS,T=10mS *2:Time 3 Sec max,Position:Up to 2mm from the body 740 WAVELENGTH(nm) To purchase this part contact Marktech Optoelectronics at 800.984.5337 790 50 40 30 20 10 140 3 120 2.5 100 80 60 40 20 -30 0 30 60 AMBIENT TEMPERATURE( ) Marktech Optoelectronics www.marktechopto.com 90 30 60 90 2 1.5 1 0.5 0 0 0 0 FORWARD VOLTAGE vs TEMPERATURE IF=10mA FORWARD VOLTAGE(V) 60 RELATIVE POWER OUTPUT(%) 100 260 80 -30 BEAM ANGLE(deg.) POWER OUTPUT vs TEMPERATURE IF=10mA THERMAL DERATING CURVE FORWARD CURRENT(mA) -20 TO 80 -30 TO 100 UNIT mA A V mW ℃ ℃ ℃ ℃ -60 FORWARD CURRENT(mA) 100 RATINGS 50 0.5 5 120 RELATIVE POWER OUTPUT(%) SYMBOL IF IFP VR PD Topr Tstg Tj Tls 35 -0.6 -1.9 2.3 100 RADIATION PATTERN 0 120 ITEM Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temp. Storage Temp. Junction Temp. Lead Soldering Temp.*2 MAX 120 0 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) 740 30 ±12 － － UNIT mW V μA nm nm deg. nS nS RELATIVE POWER vs FORWARD CURRENT 300 RELATIVE POWER OUTPUT(%) ② Cathode FORWARD CURRENT(mA) APPLICATIONS TYP 4.0 1.8 60 RELATIVE POWER OUTPUT(%) ① Anode ･High Output Power ･Narrow Beam Angle ･High Reliability ･Optical Switches ･Optical Sensors ･Medical Application MIN 1MHz ,V=0V IF=10mA IF=10mA Cj P/T V/T FORWARD I-V CHARACTERISTICS FEATURES CONDITIONS IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA IFP=20mA IFP=20mA SYMBOL PO VF IR λp Δλ θ Tr Tf -30 0 30 60 90 AMBIENT TEMPERATURE( ) -30 0 30 60 90 AMBIENT TEMPERATURE( )