DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz • High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V • 6-pin lead-less minimold (M16, 1208 PKG) <R> ORDERING INFORMATION Part Number Order Number NESG2031M16 NESG2031M16-A NESG2031M16-T3 Package Quantity 6-pin lead-less minimold 50 pcs • 8 mm wide embossed taping (M16, 1208 PKG) (Non reel) • Pin 1 (Collector), Pin 6 (Emitter) face the (Pb-Free) NESG2031M16-T3-A Supplying Form perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V IC 35 mA 175 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10394EJ03V0DS (3rd edition) Date Published September 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2003, 2009 NESG2031M16 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA VCE = 2 V, IC = 5 mA 130 190 260 − VCE = 3 V, IC = 20 mA, f = 2 GHz 20 25 − GHz ⏐S21e⏐ VCE = 3 V, IC = 20 mA, f = 2 GHz 16.0 18.0 − dB Noise Figure (1) NF VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt − 0.8 1.1 dB Noise Figure (2) NF VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt − 1.3 − dB Associated Gain (1) Ga VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt 15.0 17.0 − dB Associated Gain (2) Ga VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt − 10.0 − dB VCB = 2 V, IE = 0 mA, f = 1 MHz − 0.15 0.25 pF VCE = 3 V, IC = 20 mA, f = 2 GHz 19.0 21.5 − dB − 13 − dBm − 23 − dBm DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Note 2 Reverse Transfer Capacitance Cre Maximum Stable Power Gain MSG Gain 1 dB Compression Output Power Note 3 PO (1 dB) VCE = 3 V, IC (set) = 20 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt Output 3rd Order Intercept Point OIP3 VCE = 3 V, IC (set) = 20 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION <R> 2 Rank FB/YFB Marking zF hFE Value 130 to 260 Data Sheet PU10394EJ03V0DS NESG2031M16 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 250 200 175 150 100 50 0 25 50 75 100 125 Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 300 0.3 f = 1 MHz 0.2 0.1 0 150 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 10 1 0.1 0.01 0.001 0.0001 0.4 8 10 10 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 35 VCE = 3 V 200 μ A 180 μ A 160 μ A 140 μ A 120 μ A 30 Collector Current IC (mA) 10 1 0.1 0.01 0.001 0.0001 0.4 6 VCE = 2 V Base to Emitter Voltage VBE (V) 100 4 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current IC (mA) Collector Current IC (mA) 100 2 Collector to Base Voltage VCB (V) Ambient Temperature TA (°C) Collector Current IC (mA) <R> 25 20 100 μ A 15 80 μ A 10 60 μ A 40 μ A 5 IB = 20 μ A 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 6 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS 3 NESG2031M16 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 100 10 0.1 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 1 10 100 100 10 0.1 Collector Current IC (mA) 1 000 DC Current Gain hFE VCE = 3 V 100 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 10 Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 10 0.1 1 Data Sheet PU10394EJ03V0DS 100 NESG2031M16 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) VCE = 1 V, f = 2 GHz 25 20 15 10 5 0 1 10 VCE = 3 V, f = 2 GHz 10 5 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 10 5 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 0 1 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 15 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 35 VCE = 1 V, IC = 10 mA 30 25 MSG MAG 20 15 |S21e|2 10 5 0 0.1 1 10 100 Collector Current IC (mA) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 2 V, IC = 10 mA 35 30 MSG MAG 20 MAG 15 2 MSG |S21e| 10 5 0 0.1 20 Collector Current IC (mA) 20 25 25 Collector Current IC (mA) 30 25 VCE = 2 V, f = 2 GHz 0 1 100 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 30 Frequency f (GHz) 40 VCE = 3 V, IC = 10 mA 35 30 MSG MAG 25 20 MAG 15 2 MSG |S21e| 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS 5 NESG2031M16 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 1 V, f = 1 GHz 25 MSG 20 MAG |S21e|2 15 10 5 0 1 10 100 30 25 MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 1 V, f = 3 GHz 25 MSG 20 MAG 15 2 |S21e| 10 5 0 1 10 100 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG 10 5 1 25 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 15 0 VCE = 1 V, f = 5 GHz Collector Current IC (mA) |S21e|2 20 30 Collector Current IC (mA) VCE = 2 V, f = 1 GHz 25 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 10 100 30 VCE = 2 V, f = 2 GHz 25 MSG MAG 20 |S21e|2 15 10 5 0 1 10 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 VCE = 1 V, f = 2 GHz Collector Current IC (mA) 30 Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Data Sheet PU10394EJ03V0DS 100 NESG2031M16 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 2 V, f = 3 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 3 V, f = 1 GHz MSG 20 |S21e| 15 2 10 5 0 VCE = 2 V, f = 5 GHz Collector Current IC (mA) 30 25 30 Collector Current IC (mA) 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 30 VCE = 3 V, f = 2 GHz 25 MSG MAG 20 |S21e|2 15 10 5 0 10 1 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 3 V, f = 3 GHz 25 MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 3 V, f = 5 GHz 25 20 MSG MAG 15 10 Collector Current IC (mA) |S21e|2 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS 7 NESG2031M16 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 50 20 40 30 Pout IC 5 20 10 0 –5 –30 –25 –20 –15 –10 10 IC 5 10 –20 –5 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 40 Pout 30 IC 5 20 10 0 –15 –10 –5 0 0 5 Output Power Pout (dBm) VCE = 3 V, f = 5.2 GHz, Icq = 20 mA 15 10 0 0 50 20 Collector Current IC (mA) Output Power Pout (dBm) –10 Input Power Pin (dBm) VCE = 3 V, f = 3 GHz, Icq = 20 mA 40 15 Pout 10 30 IC 5 20 10 0 –5 –15 Input Power Pin (dBm) –10 –5 0 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 8 –15 Input Power Pin (dBm) 20 –5 –20 20 0 –5 –25 0 –5 30 Pout Data Sheet PU10394EJ03V0DS 5 0 10 Collector Current IC (mA) 10 40 15 Collector Current IC (mA) 15 Output Power Pout (dBm) VCE = 3 V, f = 2 GHz, Icq = 20 mA Collector Current IC (mA) Output Power Pout (dBm) VCE = 3 V, f = 1 GHz, Icq = 20 mA NESG2031M16 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 Ga 3 20 2 15 10 1 NF 10 5 100 20 2 15 1 0 1 10 VCE = 2 V, f = 1 GHz 10 5 100 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 5 30 4 25 4 25 3 20 Ga 2 15 10 NF 0 1 VCE = 1 V, f = 2 GHz 10 Noise Figure NF (dB) 5 1 3 20 Ga 2 15 1 10 NF 0 5 100 1 VCE = 2 V, f = 2 GHz 10 5 100 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 25 5 25 4 20 4 20 3 15 Ga 10 2 NF 1 0 5 VCE = 1 V, f = 5.2 GHz 1 10 0 100 Noise Figure NF (dB) Noise Figure NF (dB) 25 3 NF Associated Gain Ga (dB) Noise Figure NF (dB) 0 1 VCE = 1 V, f = 1 GHz Ga 3 15 Ga 10 2 NF 1 0 Associated Gain Ga (dB) 25 Associated Gain Ga (dB) 4 30 5 Associated Gain Ga (dB) 5 Noise Figure NF (dB) 30 Associated Gain Ga (dB) 5 Associated Gain Ga (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT VCE = 2 V, f = 5.2 GHz 1 Collector Current IC (mA) 10 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10394EJ03V0DS 9 NESG2031M16 30 5 30 4 25 4 25 Ga 3 20 2 15 10 1 NF 0 1 VCE = 3 V, f = 1 GHz 10 Noise Figure NF (dB) 5 20 3 Ga 2 15 10 1 NF 5 100 0 1 VCE = 3 V, f = 2 GHz 10 Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 100 Collector Current IC (mA) Collector Current IC (mA) 5 25 4 20 3 15 Ga 10 2 NF 1 0 5 Associated Gain Ga (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT VCE = 3 V, f = 5.2 GHz 1 10 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 10 Data Sheet PU10394EJ03V0DS NESG2031M16 PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) 1.0±0.05 3 0.15±0.05 6 5 0.125+0.1 –0.05 0.5±0.05 4 2 0.4 0.4 0.8 zF 1.2+0.07 –0.05 1 0.8+0.07 –0.05 PIN CONNECTIONS 1. 2. 3. 4. 5. 6. Collector Emitter Emitter Base Emitter Emitter Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking. Data Sheet PU10394EJ03V0DS 11 NESG2031M16 • The information in this document is current as of September, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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