RENESAS UPA862TD-A

Preliminary Data Sheet
μPA862TD
NPN Silicon RF Twin Transistor (with 2 Different Elements)
in a 6-pin Lead-less Minimold
R09DS0032EJ0200
Rev.2.00
Dec 19, 2011
FEATURES
• Low voltage operation
<R>
• 2 different built-in transistors (2SC5010, 2SC5801)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP., ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
<R>
<R>
3-pin thin-type ultra super minimold part No.
Q1
Q2
2SC5010
2SC5801
ORDERING INFORMATION
Part Number
Order Number
Quantity
Package
μPA862TD
μPA862TD-T3
Supplying Form
μPA862TD-A
50 pcs (Non reel)
6-pin lead -less minimold
• 8 mm wide embossed taping
μPA862TD-T3-A
10 kpcs/reel
(1208) (Pb-Free)
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 1 of 18
μPA862TD
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Q1
Q2
Collector to Base Voltage
VCBO
9
9
V
Collector to Emitter Voltage
VCEO
6
5.5
V
Emitter to Base Voltage
VEBO
2
1.5
V
30
100
mA
180
190
mW
Collector Current
Total Power Dissipation
IC
Ptot
Note
210 in 2 elements
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 2 of 18
μPA862TD
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
−
−
100
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0
−
−
100
nA
VCE = 3 V, IC = 10 mA
75
110
150
−
VCE = 3 V, IC = 10 mA, f = 2 GHz
10.0
12.0
−
GHz
⏐S21e⏐
VCE = 3 V, IC = 10 mA, f = 2 GHz
7.0
8.5
−
dB
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
−
1.5
2.5
dB
VCB = 3 V, IE = 0, f = 1 MHz
−
0.4
0.7
pF
MIN.
TYP.
MAX.
Unit
DC Current Gain
hFE
Gain Bandwidth Product
Note 1
fT
2
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Cre
Note 2
(2) Q2
Parameter
Symbol
Test Conditions
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
−
−
600
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0
−
−
600
nA
VCE = 1 V, IC = 5 mA
100
120
145
−
DC Current Gain
hFE
Note 1
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.5
−
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 15 mA, f = 2 GHz
5.0
6.5
−
GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.0
−
dB
Insertion Power Gain (1)
⏐S21e⏐
Insertion Power Gain (2)
⏐S21e⏐
VCE = 1 V, IC = 15 mA, f = 2 GHz
4.5
5.5
−
dB
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
−
1.9
2.5
dB
VCB = 0.5 V, IE = 0, f = 1 MHz
−
0.6
0.8
pF
2
2
Noise Figure
Reverse Transfer Capacitance
Cre
Note 2
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB/YFB
Marking
vY
hFE Value of Q1
75 to 150
hFE Value of Q2
100 to 145
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 3 of 18
μPA862TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation Ptot (mW)
300
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
250
2 Elements in total
210
200
190
180
150
Q2
Q1
100
50
25
0
50
75
100
125
150
Ambient Temperature TA (˚C)
Q1
Q2
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0
2
4
6
8
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
Reverse Transfer Capacitance Cre (pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
10
Collector to Base Voltage VCB (V)
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 4 of 18
μPA862TD
Q1
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
1
0.1
0.01
0.001
0.0001
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
VCE = 1 V
0.0001
0.4
Collector Current IC (mA)
Collector Current IC (mA)
100
VCE = 1 V
Collector Current IC (mA)
Collector Current IC (mA)
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
1.0
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
100
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 5 of 18
μPA862TD
Q1
Q2
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
300 μ A
30
Collector Current IC (mA)
Collector Current IC (mA)
40
270 μ A
240 μ A
210 μ A
180 μ A
150 μ A
120 μ A
90 μ A
60 μ A
20
10
0
1
2
3
4
5
IB = 30 μ A
6
7
8
Collector to Emitter Voltage VCE (V)
400 μ A
360 μ A
320 μ A
50
40
280 μ A
240 μ A
30
200 μ A
160 μ A
20
120 μ A
80 μ A
10
0
1
2
3
4
5
IB = 40 μ A
7
6
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 6 of 18
μPA862TD
Q1
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 1 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 1 V
100
10
0.1
1
10
100
10
0.1
100
1
10
Collector Current IC (mA)
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 2 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 2 V
100
10
0.1
100
1
10
100
Collector Current IC (mA)
100
10
0.1
1
10
100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
DC Current Gain hFE
VCE = 3 V
100
10
0.1
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 7 of 18
μPA862TD
Q1
Q2
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
8
6
4
2
0
1
14
Gain Bandwidth Product fT (GHz)
Gain Bandwidth Product fT (GHz)
12
10
VCE = 1 V
f = 2 GHz
12
10
VCE = 1 V
f = 2 GHz
8
6
4
2
0
1
100
10
100
Collector Current IC (mA)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
Gain Bandwidth Product fT (GHz)
Gain Bandwidth Product fT (GHz)
14
10
8
6
4
2
0
1
10
100
VCE = 2 V
f = 2 GHz
8
6
4
2
0
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
14
12
VCE = 3 V
f = 2 GHz
10
8
6
4
2
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 8 of 18
μPA862TD
Q1
Q2
VCE = 1 V
IC = 10 mA
30
MSG
MAG
20
15
10
|S21e|2
5
0
0.1
1
10
25
20
MSG
MAG
15
10
5
|S21e|2
0
0.1
1
10
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
VCE = 2 V
IC = 10 mA
30
MSG
MAG
20
15
10
|S21e|2
5
0
0.1
1
10
35
VCE = 1 V
IC = 15 mA
30
25
MSG
MAG
20
15
10
|S21e|2
5
0
0.1
1
10
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 3 V
IC = 10 mA
30
25
VCE = 1 V
IC = 5 mA
30
Frequency f (GHz)
35
25
35
Frequency f (GHz)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
MSG
MAG
20
15
10
|S21e|2
5
0
0.1
1
10
Frequency f (GHz)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 2 V
IC = 5 mA
30
25
MSG
20
MAG
15
10
5
0
0.1
|S21e|2
1
10
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 9 of 18
μPA862TD
Q2
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 2 V
IC = 15 mA
30
25
MSG
MAG
20
15
10
|S21e|2
5
0
0.1
1
10
Frequency f (GHz)
Remark The graph indicates nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 10 of 18
μPA862TD
Q1
Q2
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 1 V
f = 1 GHz
MSG
20
MAG
15
|S21e|2
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
VCE = 1 V
f = 1 GHz
MSG
MAG
15
|S21e|2
10
5
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
25
VCE = 1 V
f = 2 GHz
20
15 MSG
MAG
10
|S21e|2
5
0
1
10
100
15
VCE = 1 V
f = 2 GHz
MAG
10
|S21e|2
5
0
–5
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
VCE = 1 V
f = 4 GHz
20
15
10
MAG
5
|S21e|2
0
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Collector Current IC (mA)
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
15
VCE = 1 V
f = 4 GHz
10
MSG
MAG
5
0
|S21e|2
–5
–10
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 11 of 18
μPA862TD
Q1
Q2
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 2 V
f = 1 GHz
MSG
20
MAG
|S21e|2
15
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
VCE = 2 V
f = 1 GHz
MSG
MAG
15
|S21e|2
10
5
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
25
VCE = 2 V
f = 2 GHz
20
15 MSG
MAG
10
|S21e|2
5
0
1
10
100
15
VCE = 2 V
f = 2 GHz
MAG
10
|S21e|2
5
0
–5
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
VCE = 2 V
f = 4 GHz
20
15
10
MAG
5
2
|S21e|
0
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Collector Current IC (mA)
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 4 GHz
MSG
MAG
5
|S21e|2
0
–5
–10
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 12 of 18
μPA862TD
Q1
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
VCE = 3 V
f = 1 GHz
MSG
20
MAG
|S21e|2
15
10
5
0
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
VCE = 3 V
f = 2 GHz
20
15 MSG
MAG
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
25
VCE = 3 V
f = 4 GHz
20
15
10
MAG
5
0
|S21e|2
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 13 of 18
μPA862TD
Q1
Q2
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
12
4
8
2
0
4
NF
1
5
2
6
3
NF
1
0
100
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
6
Ga
6
12
4
8
4
NF
1
15
Ga
4
12
3
9
2
6
NF
1
0
100
10
18
VCE = 1 V
f = 1.5 GHz
5
Noise Figure NF (dB)
16
8
Associated Gain Ga (dB)
Noise Figure NF (dB)
9
Collector Current IC (mA)
2
0
1
3
0
100
10
Collector Current IC (mA)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
20
6
16
6
12
Ga
8
4
2
NF
1
10
4
0
100
Collector Current IC (mA)
18
VCE = 1 V
f = 2 GHz
5
Noise Figure NF (dB)
8
Associated Gain Ga (dB)
VCE = 1 V
f = 2 GHz
Noise Figure NF (dB)
3
0
VCE = 1 V
f = 1.5 GHz
0
12
Collector Current IC (mA)
10
0
15
4
1
0
100
10
Ga
15
12
4
Ga
9
3
2
NF
6
3
1
0
Associated Gain Ga (dB)
6
18
VCE = 1 V
f = 1 GHz
Associated Gain Ga (dB)
16
Noise Figure NF (dB)
Ga
8
6
Associated Gain Ga (dB)
VCE = 1 V
f = 1 GHz
1
10
Associated Gain Ga (dB)
20
10
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 14 of 18
μPA862TD
Q1
Q2
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
12
4
8
2
0
4
NF
1
5
Noise Figure NF (dB)
16
3
9
2
6
3
NF
1
0
100
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
Ga
6
12
4
8
4
NF
1
15
Ga
4
12
3
9
2
6
NF
1
0
100
10
VCE = 2 V
f = 1.5 GHz
5
Noise Figure NF (dB)
16
8
18
6
Associated Gain Ga (dB)
Noise Figure NF (dB)
12
Collector Current IC (mA)
2
0
1
3
0
100
10
Collector Current IC (mA)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
10
Ga
12
8
4
2
NF
1
10
4
0
100
Collector Current IC (mA)
VCE = 2 V
f = 2 GHz
5
Noise Figure NF (dB)
6
Associated Gain Ga (dB)
16
8
18
6
VCE = 2 V
f = 2 GHz
Noise Figure NF (dB)
4
0
VCE = 2 V
f = 1.5 GHz
0
15
Collector Current IC (mA)
10
0
Ga
1
0
100
10
VCE = 2 V
f = 1 GHz
15
12
4
Ga
9
3
2
NF
6
3
1
0
Associated Gain Ga (dB)
Ga
8
18
6
Associated Gain Ga (dB)
Noise Figure NF (dB)
VCE = 2 V
f = 1 GHz
Associated Gain Ga (dB)
20
10
1
10
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 15 of 18
μPA862TD
Q1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
10
Ga
8
16
6
12
4
8
2
0
4
NF
1
Associated Gain Ga (dB)
Noise Figure NF (dB)
VCE = 3 V
f = 1 GHz
0
100
10
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
20
16
8
Ga
6
12
4
8
2
0
4
NF
1
Associated Gain Ga (dB)
Noise Figure NF (dB)
VCE = 3 V
f = 1.5 GHz
0
100
10
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
10
16
8
Ga
6
8
4
2
0
12
NF
1
10
4
Associated Gain Ga (dB)
Noise Figure NF (dB)
VCE = 3 V
f = 2 GHz
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 16 of 18
μPA862TD
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
Page 17 of 18
μPA862TD
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1208) (UNIT: mm)
1.0±0.05
C1
1
Q1
6
B1
5
6
0.15±0.05
(Top View)
E1
4
2
3
0.4
0.8
vY
0.4
1
0.8+0.07
–0.05
1.2+0.07
–0.05
C2
2
3
5
Q2
4
E2
B2
PIN CONNECTIONS
0.125+0.1
–0.05
0.5±0.05
<R>
1.
2.
3.
4.
5.
6.
Collector (Q1)
Emitter (Q1)
Collector (Q2)
Base (Q2)
Emitter (Q2)
Base (Q1)
(Bottom View)
0.1
0.2
R09DS0032EJ0200 Rev.2.00
Dec 19, 2011
0.6
Page 18 of 18
μPA862TD Data Sheet
Revision History
Rev.
Date
Page
−
2.00
July 2001
Dec 19, 2011
−
Throughout
p.1
p.1
p.1
p.18
Description
Summary
Previous No. : P15685EJ1V0DS00
Deletion of S-PARAMETERS Q1, S-PARAMETERS Q2
Modification of FEATURES
Modification of BUILT-IN TRANSISTORS
Modification of ORDERING INFORMATION
Modification of PACKAGE DIMENSIONS
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