DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 5.8 GHz • SiGe:C HBT technology (UHS4) adopted • Improvement of ESD protection • 4-pin lead-less minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number Order Number NESG4030M14 NESG4030M14-A Package Quantity 4-pin lead-less minimold 50 pcs • 8 mm wide embossed taping (M14, 1208 PKG) (Non reel) • Pin 1 (Collector), Pin 4 (Emitter) face the (Pb-Free) NESG4030M14-T3 NESG4030M14-T3-A Supplying Form perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Base Current Symbol VCBO VCEO IB Collector Current Total Power Dissipation Note 1 Ratings Unit 5.0 V 3.0 V Note 1 12 mA IC 35 mA 105 mW Ptot Note 2 Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Notes 1. VCBO and IB are limited by the permissible current of the protection element. 2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10728EJ02V0DS (2nd edition) Date Published August 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2008, 2009 NESG4030M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Input Power Pin − − 3 dBm Base Feedback Resister Rb − − 150 kΩ Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the ESD protection element is turned on when recommended range of motion in the above table is exceeded. However, there is no influence of reliability, including deterioration. Rb 2 Data Sheet PU10728EJ02V0DS NESG4030M14 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 4.3 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 0.4 V, IC = 0 mA − − 100 nA VCE = 2 V, IC = 6 mA 270 400 540 − ⏐S21e⏐ VCE = 2 V, IC = 20 mA, f = 5.8 GHz 8.5 10.5 − dB Noise Figure NF VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 1.1 1.5 dB Associated Gain Ga VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 9.5 11.5 − dB VCB = 2 V, IE = 0 mA, f = 1 MHz − 0.12 0.25 pF VCE = 2 V, IC = 20 mA, f = 5.8 GHz 13 15 − dB VCE = 2 V, IC (set) = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt − 9 − dBm DC Current Gain hFE Note 1 RF Characteristics 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power Cre Note 2 MSG Note 3 PO (1 dB) Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION <R> Rank FB/YFB Marking zK hFE Value 270 to 540 Data Sheet PU10728EJ02V0DS 3 NESG4030M14 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 200 Mounted on Glass Epoxy PWB (1.08 cm2 × 1.0 mm (t) ) 150 100 50 0 25 50 75 100 125 0.3 f = 1 MHz 0.2 0.1 0 150 2 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.6 0.8 1 VCE = 2 V 0.1 0.01 0.001 0.0001 0.4 0.6 0.8 1 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 VCE = 3 V Collector Current IC (mA) 10 1 0.1 0.01 0.001 180 μ A 160 μA 140 μA 30 120 μA 100 μA 80 μA 20 60 μA 40 μA 10 IB = 20 μA 0.6 0.8 1 0 Base to Emitter Voltage VBE (V) 1 2 3 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 4 10 1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.0001 0.4 8 10 Base to Emitter Voltage VBE (V) 100 6 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current IC (mA) Collector Current IC (mA) 100 4 Collector to Base Voltage VCB (V) Ambient Temperature TA (°C) Collector Current IC (mA) <R> Data Sheet PU10728EJ02V0DS NESG4030M14 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 100 10 0.1 1 10 10 0.1 100 DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 100 30 100 10 0.1 1 10 Gain Bandwidth Product fT (GHz) DC Current Gain hFE 10 Collector Current IC (mA) VCE = 3 V VCE = 1 V, f = 2 GHz 25 20 15 10 5 0 1 100 10 Collector Current IC (mA) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 100 30 VCE = 2 V, f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 1 Collector Current IC (mA) 1 000 25 20 15 10 5 0 1 100 10 100 VCE = 3 V, f = 2 GHz 25 20 15 10 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10728EJ02V0DS 5 NESG4030M14 VCE = 1 V, IC = 20 mA 25 MAG MSG 20 15 2 |S21e| 5 0 1 10 100 VCE = 3 V, IC = 20 mA MSG MAG MAG MSG 2 |S21e| 10 5 0 1 10 100 MSG 10 5 0 1 30 10 100 VCE = 1 V, f = 2.4 GHz 25 MSG 20 15 MAG |S21e|2 10 5 0 1 10 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT |S21e|2 10 5 10 100 30 25 100 VCE = 3 V, f = 2.4 GHz MSG 20 15 |S21e|2 10 5 0 Collector Current IC (mA) 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 MAG |S21e|2 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 20 1 15 Collector Current IC (mA) MSG 0 MAG 20 Frequency f (GHz) VCE = 2 V, f = 2.4 GHz 15 MSG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 25 25 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 20 30 VCE = 2 V, IC = 20 mA Frequency f (GHz) 30 25 30 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Data Sheet PU10728EJ02V0DS 100 NESG4030M14 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 1 V, f = 5.2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 –5 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 30 VCE = 2 V, f = 5.2 GHz 25 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 3 V, f = 5.2 GHz 25 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 30 VCE = 1 V, f = 5.8 GHz 25 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 2 V, f = 5.8 GHz 25 20 MSG 15 MAG 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 3 V, f = 5.8 GHz 25 20 MSG MAG 15 10 |S21e|2 5 0 Collector Current IC (mA) 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10728EJ02V0DS 7 NESG4030M14 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 50 50 15 5 20 IC 0 –5 –20 –15 –10 10 –5 0 5 0 0 20 IC 10 –5 –10 –15 –10 –5 –0 5 0 10 Input Power Pin (dBm) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 5 16 4 3 12 2 8 1 4 NF 1 f = 2.4 GHz, VCE = 2 V 10 0 100 Noise Figure NF (dB) Ga 4 Noise Figure NF (dB) 30 5 Input Power Pin (dBm) 5 0 Pout 15 Ga 12 3 9 2 6 1 0 Collector Current IC (mA) 30 Pout 40 10 NF 1 Collector Current IC (mA) 3 Associated Gain Ga (dB) 10 Output Power Pout (dBm) 40 15 Collector Current IC (mA) f = 5.8 GHz , VCE = 2 V, IC (set) = 6 mA Associated Gain Ga (dB) Output Power Pout (dBm) f = 2.4 GHz , VCE = 2 V, IC (set) = 6 mA f = 5.8 GHz, VCE = 2 V 10 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 8 Data Sheet PU10728EJ02V0DS NESG4030M14 PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) (Top View) (Bottom View) 1.0±0.05 0.15±0.05 2 0.6 1 4 0.8 zK 3 0.8+0.07 –0.05 0.2 0.11+0.1 –0.05 0.1 0.5±0.05 1.2+0.07 –0.05 <R> PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base Emitter Data Sheet PU10728EJ02V0DS 9 NESG4030M14 • The information in this document is current as of August, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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