DATA SHEET PHOTOCOUPLER PS2703-1,PS2703-2,PS2703-4 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE −NEPOC SOP MULTI PHOTOCOUPLER TM Series− DESCRIPTION The PS2703-1, PS2703-2, PS2703-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. Each is mounted in a plastic SOP (Small Outline Package) for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 3 750 Vr.m.s.) • High collector to emitter voltage (VCEO = 120 V) • SOP (Small Outline Package) type • Each isolated channel per package • High-speed switching (tr, tf = 10 µs TYP.) • Taping product number (Only-1 type): PS2703-1-E3, E4, F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option) APPLICATIONS • Hibrid IC • Telephone/FAX • FA/OA equipment • Programmable logic controllers • Power supply ORDERING INFORMATION Part Number Package Safety Standard Approval PS2703-1 4-pin SOP Standard specification products PS2703-2 8-pin SOP • UL approved PS2703-4 16-pin SOP PS2703-1-V 4-pin SOP PS2703-2-V 8-pin SOP PS2703-4-V 16-pin SOP VDE0884 specification products (Option) The information in this document is subject to change without notice. Document No. P11308EJ6V0DS00 (6th edition) Date Published December 1998 NS CP(K) Printed in Japan The mark • shows major revised points. © 1988 PS2703-1,PS2703-2,PS2703-4 PACKAGE DIMENSIONS (in millimeters) PS2703-1 4.5 MAX. TOP VIEW 4 1 3 1. Anode 2. Cathode 3. Emitter 4. Collector 2 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 7.0±0.3 4.4 2.54 1.2 MAX. 0.4 +0.10 –0.05 0.5±0.3 0.25 M PS2703-2 9.3 MAX. TOP VIEW 8 7 6 5 1. 3. 2. 4. 5. 7. 6. 8. 1 2 3 4 7.0±0.3 4.4 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. Anode Cathode Emitter Collector 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.5±0.3 0.25 M PS2703-4 19.46 MAX. TOP VIEW 16 15 1 2 14 13 12 3 4 5 1. 3. 5. 7. 2. 4. 6. 8. 9. 11. 13. 15. 10. 12. 14. 16. 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 2 0.25 M 2.54 1.2 MAX. Data Sheet P11308EJ6V0DS00 0.5±0.3 10 9 6 7 8 Anode Cathode Emitter Collector 7.0±0.3 4.4 0.4 +0.10 –0.05 11 1.3 PS2703-1,PS2703-2,PS2703-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Diode Symbol PS2703-2, PS2703-4 Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ∆PD/°C 0.8 mW/°C PD 80 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 120 V Emitter to Collector Voltage VECO 6 V IC 30 mA/ch Power Dissipation Derating Power Dissipation Peak Forward Current Transistor PS2703-1 *1 Collector Current Power Dissipation Derating Power Dissipation *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P11308EJ6V0DS00 3 PS2703-1,PS2703-2,PS2703-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz MIN. TYP. MAX. Unit 1.1 1.4 V 5 µA 30 Transistor Collector to Emitter Current ICEO IF = 0 mA, VCE = 120 V Coupled Current Transfer Ratio CTR IF = 5 mA, VCE = 5 V 50 150 IF = 1 mA, VCE = 5 V 10 80 *1 (IC/IF) 100 nA 400 % 0.3 V Collector Saturation Voltage VCE (sat) Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF VCC = 5 V, IC = 2 mA, RL = 1 kΩ 10 µs Rise Time Fall Time *2 tr *2 IF = 10 mA, IC = 2 mA tf CTR rank CTR (%) Conditions K 200 to 400 IF = 5 mA, VCE = 5 V 80 to IF = 1 mA, VCE = 5 V 100 to 300 IF = 5 mA, VCE = 5 V 25 to IF = 1 mA, VCE = 5 V 50 to 150 IF = 5 mA, VCE = 5 V 10 to IF = 1 mA, VCE = 5 V L M *2 Test circuit for switching time Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 In monitor 50 Ω Ω 11 10 10 *1 CTR rank (only PS2703-1) 4 pF VOUT RL = 1 kΩ Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 75 50 25 25 0 50 75 100 200 150 PS2703-1 1.5 mW/˚C 100 PS2703-2, PS2703-4 1.2 mW/˚C 50 25 0 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 10 1 +25 ˚C 0 ˚C –25 ˚C –55 ˚C 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 10 8 4 mA 6 3 mA 4 2 mA 2 1 mA 0.5 mA 2 0 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 000 10 10 000 5 000 5 1 000 500 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) TA = +100 ˚C +75 ˚C +50 ˚C IF = 10 Collector Current IC (mA) Forward Current IF (mA) mA 5 mA VCE = 40 V 24 V 10 V 100 50 10 5 1 0.5 0.1 –60 –40 –20 0 20 40 60 Ambient Temperature TA (˚C) 80 100 IF = 25 mA 10 mA 5 mA 2.5 mA 2 mA 1.5 mA 1 mA 1 0.5 0.5 mA 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE (sat) (V) Data Sheet P11308EJ6V0DS00 5 PS2703-1,PS2703-2,PS2703-4 CURRENT TRANSFER RATIO vs. FORWARD CURRENT ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 300 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0.0 –55 –25 0 25 50 75 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 250 200 150 100 50 0 0.1 100 0.5 1 5 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 100 50 1.2 VCC = 5V, IC = 2 mA tf 1.0 tr 10 Normalized Gain GV Switching Time t ( µ s) VCE = 5 V td ts 1 RL = 1 kΩ 510 Ω 300 Ω 100 Ω 0.8 0.6 0.4 0.2 0.1 10 100 0.0 0.5 10 k 1k 50 100 SWITCHING TIME vs. LOAD RESISTANCE LONG TIME CTR DEGRADATION 500 1.2 CTR Dgradation (Relative Value) Switching Time t ( µ s) 10 Frequency f (kHz) IF = 5 mA, VCC = 5 V, CTR = 90 % tf 100 ts 10 tr td 1 1 10 100 1.0 0.8 IF = 1 mA, TA = 25 ˚C IF = 5 mA, TA = 25 ˚C IF = 20 mA, TA = 25 ˚C IF = 20 mA, TA = 60 ˚C 0.6 0.4 0.2 0.0 1 Load Resistance RL (kΩ) Remark The graphs indicate nominal characteristics. 6 5 Load Resistance RL (Ω) 1 000 0.1 1 Data Sheet P11308EJ6V0DS00 102 103 104 Time (Hr) 105 106 PS2703-1,PS2703-2,PS2703-4 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.4±0.1 7.4±0.1 5.5±0.1 1.55±0.1 12.0±0.2 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 4.6±0.1 8.0±0.1 Taping Direction PS2703-1-E4 PS2703-1-F4 PS2703-1-E3 PS2703-1-F3 Outline and Dimensions (Reel) 6 6.0±1 Packing: PS2703-1-E3, E4 900 pcs/reel PS2703-1-F3, F4 3 500 pcs/reel φ 13.0±0.5 1.5±0.5 φ 66 2.0±0.5 0˚ 1.5±0.1 120 ˚ PS2703-1-E3, E4: φ 178 PS2703-1-F3, F4: φ 330 φ 21.0±0.8 1.5±0.1 12.4 +2.0 –0.0 18.4 MAX. Data Sheet P11308EJ6V0DS00 7 PS2703-1,PS2703-2,PS2703-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 8 Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. IV for rated line voltages ≤ 600 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) UIORM 710 Vpeak Upr = 1.2 × UIORM, Pd < 5 pC Upr 850 Vpeak Test voltage (partial discharge test procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak Highest permissible overvoltage UTR 6 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C 12 Ω 11 Ris MIN. 10 Ω Package temperature Tsi 150 °C Current (input current IF, Psi = 0) Isi 200 mA Power (output or total power dissipation) Psi 300 mW Ris MIN. 10 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 9 Ω Data Sheet P11308EJ6V0DS00 9 PS2703-1,PS2703-2,PS2703-4 [MEMO] 10 Data Sheet P11308EJ6V0DS00 PS2703-1,PS2703-2,PS2703-4 [MEMO] Data Sheet P11308EJ6V0DS00 11 PS2703-1,PS2703-2,PS2703-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5