DATA SHEET PHOTOCOUPLER PS2501-1,-2,-4, PS2501L-1,-2,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • Ordering number of taping product: PS2501L-1-E3, E4, F3, F4, PS2501L-2-E3, E4 • UL approved: File No. E72422 (S) APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P10025EJ7V0DS00 (7th edition) Date Published April 1998 NS CP(K) Printed in Japan The mark • shows major revised points. © 1988 PS2501-1,-2,-4,PS2501L-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) DIP Type PS2501-4 (New Package) PS2501-1 (New Package) TOP VIEW TOP VIEW 4 3 16 15 14 13 1211 10 9 4.6 ± 0.35 20.3 MAX. 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 6.5 6.5 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 1.25±0.15 0.50 ± 0.10 0.25 M 0 to 15˚ 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 7.62 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 0 to 15˚ 2.54 2.54 PS2501-1 PS2501-2 TOP VIEW TOP VIEW 4 3 8 7 6 5 10.2 MAX. 5.1 MAX. 1 2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 6.5 6.5 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 1.25±0.15 0.50 ± 0.10 0.25 M 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 7.62 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 0 to 15˚ 2.54 0 to 15˚ 2.54 TOP VIEW PS2501-4 16 15 14 13 12 11 10 9 20.3 MAX. 6.5 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 2.54 Caution New package 1-ch, 4-ch only 2 0 to 15˚ PS2501-1,-2,-4,PS2501L-1,-2,-4 Lead Bending Type PS2501L-4 (New Package) PS2501L-1 (New Package) TOP VIEW TOP VIEW 4 3 16 15 14 13 1211 10 9 4.6 ± 0.35 20.3 MAX. 0.90 ± 0.25 6.5 7.62 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 9.60 ± 0.4 2.54 2.54 PS2501L-1 PS2501L-2 TOP VIEW TOP VIEW 4 3 8 7 6 5 10.2 MAX. 5.1 MAX. 7.62 3.8 MAX. 3.8 MAX. 7.62 0.90 ± 0.25 1.25±0.15 0.25 M 1 2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 6.5 0.05 to 0.2 6.5 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 2.54 0.05 to 0.2 1.25±0.15 0.25 M 0.05 to 0.2 3.8 MAX. 7.62 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 3.8 MAX. 0.05 to 0.2 6.5 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 9.60 ± 0.4 2.54 PS2501L-4 TOP VIEW 16 15 14 13 12 11 10 9 20.3 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 2.54 Caution New package 1-ch, 4-ch only 3 PS2501-1,-2,-4,PS2501L-1,-2,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Diode Symbol PS2501-2,-4 PS2501L-2,-4 Unit Reverse Voltage VR 6 V Forward Current (DC) IF 80 mA Power Dissipation Derating Power Dissipation Peak Forward Current Transistor PS2501-1, PS2501L-1 *1 ∆PD/°C 1.5 1.2 mW/°C PD 150 120 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA/ch Collector Current Power Dissipation Derating Power Dissipation *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 4 PS2501-1,-2,-4,PS2501L-1,-2,-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 5 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) IF = 10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz Rise Time Fall Time *2 *2 tr 300 to 600 (%) L* : 200 to 400 (%) M* : 80 to 240 (%) D* : 100 to 300 (%) H* : 80 to 160 (%) W* : 130 to 260 (%) Q* : 100 to 200 (%) N : 80 to 600 (%) TYP. MAX. Unit 1.17 1.4 V 5 µA 50 80 300 pF 100 nA 600 % 0.3 V Ω 11 10 VCC = 10 V, IC = 2 mA, RL = 100 Ω tf *1 CTR rank ( * : only PS2501-1, PS2501L-1) K* : MIN. 0.5 pF 3 µs 5 *2 Test circuit for switching time Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 50 Ω VOUT RL = 100 Ω 5 PS2501-1,-2,-4,PS2501L-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2501-1 PS2501L-1 100 PS2501-2 PS2501L-2 PS2501-4 PS2501L-4 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 125 150 PS2501-2 PS2501L-2 PS2501-4 PS2501L-4 1.2 mW/˚C 100 100 125 150 70 50 TA = +100 ˚C +60 ˚C +25 ˚C 60 Collector Current IC (mA) Forward Current IF (mA) 75 50 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 50 40 50 30 mA 20 mA A m 10 20 IF = 5 mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 25 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) 100 10 1 – 50 –25 0 25 50 Ambient Temperature TA (˚C) 6 1.5 mW/˚C 50 0 150 PS2501-1 PS2501L-1 100 75 100 10 5 mA 5 2 mA IF = 1 mA 1 0.5 0.1 0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE(sat) (V) 1.0 PS2501-1,-2,-4,PS2501L-1,-2,-4 ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 1.0,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.8,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.6 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 450 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 400 350 300 250 200 150 100 50 0 100 0.05 0.1 1 5 10 50 Forward Current IF (mA) Ambient Temperature TA (˚C) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 50 1 000 IC = 2 mA, VCC = 10 V, CTR = 290 % tf IF = 5 mA, VCC = 5 V, CTR = 290 % tf tr 10 Switching Time t ( µ s) Switching Time t ( µ s) 0.5 td ts 1 ts 100 10 tr 0.1 10 50 100 1 100 5 k 10 k 500 1 k Load Resistance RL (Ω) 50 k 100 k LONG TERM CTR DEGRADATION –5 100 Ω –15 RL = 1 kΩ IF = 5 mA (TYP.) 1.0 CTR (Relative Value) Normalized Gain GV 5 k 10 k 1.2 IF = 5 mA, VCE = 5 V –10 500 1 k Load Resistance RL (Ω) FREQUENCY RESPONSE 0 td 0.8 TA = 25 ˚C 0.6 TA = 60 ˚C 0.4 0.2 –20 300 Ω 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) 0 102 103 104 105 Time (Hr) Remark The graphs indicate nominal characteristics. 7 PS2501-1,-2,-4,PS2501L-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Tape Direction PS2501L-1-E3 PS2501L-1-F3 PS2501L-1-E4 PS2501L-1-F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2501L-1-E3, E4: φ 250 PS2501L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2501L-1-E3, E4 1 000 pcs/reel PS2501L-1-F3, F4 2 000 pcs/reel 8 PS2501-1,-2,-4,PS2501L-1,-2,-4 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Tape Direction PS2501L-2-E3 PS2501L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 9 PS2501-1,-2,-4,PS2501L-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 10 PS2501-1,-2,-4,PS2501L-1,-2,-4 [MEMO] 11 PS2501-1,-2,-4,PS2501L-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5