NJRC NJU7098F1

NJU7098
Auto-Zero, High Precision Single Operational Amplifier
■GENERAL DESCRIPTION
The NJU7098 is Auto Zero high precision operational amplifiers
available in the SOT23-5 packages. The NJU7098 operates from a single
3V to 10V supply. The NJU7098 of CMOS operational amplifier use Auto
Zero techniques to simultaneously provide very low offset voltage, and
near-zero drift over temperature (0.05µV/ºC Max.).
The NJU7098 includes a shutdown mode. Under logic control, the
amplifiers can be switched from normal operation to a standby. When the
SHDN pin is connected high, the amplifier is active. Connecting SHDN
low disables the amplifier.
■FEATURES
●Low Offset Voltage Drift
●Low Offset Voltage
●Operating Voltage
●High Voltage Gain
●CMR, SVR
●Operating Current
●Output Full-Swing (RL=10kΩ)
●Shutdown
●Ground Sensing
●Package Outline
■PACKAGE OUTLINE
NJU7098F1
0.05µV/ºC max.
15µV max.
+3V to +10V
140dB typ.
130dB typ.
0.6mA typ. (at VDD=+5V)
SOT-23-6 (MTP6)
■APPLICATIONS
●Thermocouple / Thermopile Amplifiers
●Strain Gauge / Pressure sensor Amplifiers
●Load Cell and Bridge Transducer Amplifiers
●High Resolution Data Acquisition
●Precision Current Sensing
■TYPICAL CHARACTERISTICS
■ PIN CONFIGURATION
Input Offset Voltage vs. Temperature
6
2
+ -
3
5
4
NJU7098F1
(Top View)
PIN FUNCTION
1. OUTPUT
2. VSS
3. +INPUT
4. –INPUT
5. SHDN
6. VDD
4
Input Offset Voltage [µV]
1
VICM=0V
6
2
VDD/VSS=±5V
0
-2
-4
VDD/VSS=±2.5V
VDD/VSS=±1.5V
-6
-8
-50
Ver.2008-05-16
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
-1-
NJU7098
■ ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
Common Mode Input Voltage Range
Differential Input Voltage Range
VDD
VICM
VID
11
-0.3 to V DD +0.3
±11(Note 1)
V
V
V
Power Dissipation
PD
Operating Temperature Range
Storage Temperature Range
T opr
T st g
200 [MTP6]
mW
410 [MTP6] (Note 2)
-40 to +85
-40 to +125
ºC
ºC
(Note 1) For supply voltage less than 11V, the absolute maximum input voltage is equal to the supply voltage.
(Note 2) On the PCB " EIA/JEDEC (76.2x11.43x1.6mm, two layers, FR-4) "
(Note 3) Do not exceed "Power dissipation: PD" in which power dissipation in IC is shown by the absolute maximum rating.
Refer to following Figure 1 for a permissible loss when ambient temperature (Ta) is Ta≥25ºC .
Figure 1: Power Dissipation – Ambient Temperature
Package Type
Power Dissipation P D (mW)
400
(1)MTP6
: ∆PD= -2.0(mW/°C)
(2)MTP6[2 Layer] : ∆PD= -4.1(mW/°C)
(2)
300
200
(1)
100
0
0
25
50
75
100
o
Ambient Temperature Ta ( C)
■ OPERATING VOLTAGE (Ta=-40 to +85ºC )
-2-
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
V DD
3 to 10
V
Ver.2008-05-16
NJU7098
■ ELECTORIC CHARACTERISTICS
● DC CHARACTERISTICS (VDD=+3V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= -40~85ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Supply Current
Input Offset Voltage1
Input Offset Voltage2
Input Offset Voltage Drift
Input Bias Current1
Input Bias Current2
Input Offset Curret1
Input Offset Current2
I DD
V IO 1
V IO 2
V IO /∆t
IB1
IB2
I IO 1
I IO 2
R L =∞, No Signal
Ta=25ºC
-
0.55
3
3
15
-
1.1
15
15
0.05
50
100
100
200
mA
µV
µV
µV/ o C
pA
pA
pA
pA
Voltage Gain1
AV1
Voltage Gain2
AV2
Ta=25ºC
Ta=25ºC
Input Common Mode Voltage Range
V ICM
R L ≥10kΩ,
V o =0.35~2.65V, Ta=25ºC
R L ≥10kΩ,
V o =0.35~2.65V
CMR≥110dB
0
-
Common Mode Rejection Ratio1
CMR1
V ICM =0~1.7V, Ta=25ºC
110
130
dB
Common Mode Rejection Ratio2
CMR2
V ICM =0~1.7V
110
130
dB
Supply Voltage Rejection Ratio1
SVR1
V DD =3~10V, Ta=25ºC
110
130
-
dB
Supply Voltage Rejection Ratio2
SVR2
V DD =3~10V
110
130
-
dB
V OH 1
V OL 1
V OH 2
V OL 2
R L =2kΩ to GND
R L =2kΩ to GND
R L =10kΩ to GND
R L =10kΩ to GND
V O =2.5V
V O =0.5V
2.85
2.95
5
3
2.94
1
2.98
1
20
25
10
10
-
V
mV
V
mV
mA
mA
Maximum Output Voltage1
Maximum Output Voltage2
Output Source Current
Output Sink Current
I SO URCE
I SI NK
120
140
-
dB
115
140
-
dB
1.7
V
● AC CHARACTERISTICS (VDD=+3V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= +25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Gain Bandwidth Product
Phase Margin
Equivalent Input Noise Voltage
Internal Sampling Frequency
GB
ΦM
V NI
FS
R L =10kΩ
R L =10kΩ, CL=50pF
f=10Hz
-
2
30
120
7.5
-
MHz
deg
nV/√Hz
kHz
● TRANSIENT CHARACTERISTICS (VDD=+3V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= +25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Positive Slew Rate
+SR
A V =1, V I N =1V P -P ,
R L =10kΩ
-
3
-
V/µs
Negative Slew Rate
−SR
A V =1, V I N =1V P -P ,
R L =10kΩ
-
8
-
V/µs
MIN
TYP
MAX
UNIT
-
-
10
µA
2.5
GND
-
0.5
3
0.5
3.0
V
V
µA
● SHUTDOWN CHARACTERISTICS
(VDD=+3V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= -40~85ºC unless otherwise specified)
PARAMETER
SYMBOL
Shutdown Supply Current
I DDS HDN
Turn On Voltage to Enable Part
Turn off Voltage to Disable Part
Shutdown Bias Current
V SHDNO N
V SHDNO FF
I S HDN
Ver.2008-05-16
TEST CONDITION
R L =∞, V SHDN =GND,
No Signal
I DD ≥300µA
I DD ≤10µA
V SHDN=GND
-3-
NJU7098
■ ELECTORIC CHARACTERISTICS
● DC CARACTERISTICS (VDD=+5V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= -40~85ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Supply Current
Input Offset Voltage1
Input Offset Voltage2
Input Offset Voltage Drift
Input Bias Current1
Input Bias Current2
Input Offset Curret1
Input Offset Current2
I DD
V IO 1
V IO 2
V IO /∆t
IB1
IB2
I IO 1
I IO 2
R L =∞, No signal
Ta=25ºC
-
0.6
3
3
20
-
1.2
15
15
0.05
50
100
100
200
mA
µV
µV
µV/ o C
pA
pA
pA
pA
Voltage Gain1
AV1
R L ≥10kΩ,
V o =1~4V, Ta=25ºC
125
140
-
dB
Voltage Gain2
AV2
R L ≥10kΩ, V o =1~4V
120
140
-
dB
Input Common Mode Voltage Range
V ICM
CMR≥115dB
0
-
3.5
V
Common Mode Rejection Ratio1
CMR1
V ICM =0~3.5V, Ta=25ºC
120
130
Common Mode Rejection Ratio2
CMR2
V ICM =0~3.5V
115
130
Supply Voltage Rejection Ratio1
SVR1
V DD =4~10V, Ta=25ºC
115
130
Supply Voltage Rejection Ratio2
SVR2
V DD =4~10V
115
V OH 1
V OL 1
V OH 2
V OL 2
R L =2kΩ to GND
R L =2kΩ to GND
R L =10kΩ to GND
R L =10kΩ to GND
V O =4.5V
V O =0.5V
4.85
4.95
10
4
Maximum Output Voltage1
Maximum Output Voltage2
Output Source Current
Output Sink Current
I SO URCE
I SI NK
Ta=25ºC
Ta=25ºC
dB
dB
-
dB
130
-
dB
4.94
1
4.98
1
30
40
10
10
-
V
mV
V
mV
mA
mA
AC CHARACTERISTICS (VDD=+5V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= +25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Gain Bandwidth Product
Phase Margin
Equivalent Input Noise Voltage
Internal Sampling Frequency
GB
ΦM
V NI
FS
R L =10kΩ
R L =10kΩ, CL=50pF
f=10Hz
-
3
30
120
7.5
-
MHz
deg
nV/√Hz
kHz
● TRANSIENT CHARACTERISTICS (VDD=+5V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= +25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Positive Slew Rate
+SR
A V =1, V I N =2V P -P ,
R L =10kΩ
-
3
-
V/µs
Negative Slew Rate
−SR
A V =1, V I N =2V P -P ,
R L =10kΩ
-
12
-
V/µs
MIN
TYP
MAX
UNIT
-
-
15
µA
4.5
GND
-
2.0
5
0.5
7.0
V
V
µA
● SHUTDOWN CHARACTERISTICS
(VDD=+5V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= -40~85ºC unless otherwise specified)
PARAMETER
SYMBOL
Shutdown Supply Current
I DDS HDN
Turn On Voltage to Enable Part
Turn off Voltage to Disable Part
Shutdown Bias Current
V SHDNO N
V SHDNO FF
I S HDN
-4-
TEST CONDITION
R L =∞, V SHDN =GND,
No Signal
I DD ≥300µA
I DD ≤15µA
V SHDN=GND
Ver.2008-05-16
NJU7098
■ ELECTORIC CHARACTERISTICS
● DC CHARACTERISTICS (VDD=+10V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= -40~85ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Supply Current
Input Offset Voltage1
Input Offset Voltage2
Input Offset Voltage Drift
Input Bias Current1
Input Bias Current2
Input Offset Curret1
Input Offset Current2
I DD
V IO 1
V IO 2
V IO /∆t
IB1
IB2
I IO 1
I IO 2
R L =∞, No Signal
Ta=25ºC
-
0.7
3
3
40
-
1.5
15
15
0.05
200
200
400
400
mA
µV
µV
µV/ o C
pA
pA
pA
pA
Voltage Gain1
AV1
125
140
-
dB
Voltage Gain2
AV2
120
140
-
dB
Input Common Mode Voltage Range
V ICM
CMR≥115dB
0
-
8.5
V
Common Mode Rejection Ratio1
CMR1
V ICM =0~8.5V, Ta=25ºC
120
130
Common Mode Rejection Ratio2
CMR2
V ICM =0~8.5V
115
130
Supply Voltage Rejection Ratio1
SVR1
V DD =4~10V, Ta=25ºC
115
130
Supply Voltage Rejection Ratio2
SVR2
V DD =4~10V
115
V OH 1
V OL 1
V OH 2
V OL 2
R L =2kΩ to GND
R L =2kΩ to GND
R L =10kΩ to GND
R L =10kΩ to GND
V O =9.5V
V O =0.5V
9.5
9.6
14
5
Maximum Output Voltage1
Maximum Output Voltage2
Output Source Current
Output Sink Current
I SO URCE
I SI NK
Ta=25ºC
Ta=25ºC
R L ≥10kΩ,
V o =1~9V, Ta=25ºC
R L ≥10kΩ,
V o =1~9V
dB
dB
-
dB
130
-
dB
9.94
1
9.98
1
40
60
10
10
-
V
mV
V
mV
mA
mA
● AC CHARACTERISTICS (VDD=+10V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= +25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Gain Bandwidth Product
Phase Margin
Equivalent Input Noise Voltage
Internal Sampling Frequency
GB
ΦM
V NI
FS
R L =10kΩ
R L =10kΩ, CL=50pF
f=10Hz
-
2
30
120
7.5
-
MHz
deg
nV/√Hz
kHz
● TRANSIENT CHARACTERISTICS (VDD=+10V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= +25ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Positive Slew Rate
+SR
A V =1, V I N =2V P -P ,
R L =10kΩ
-
4
-
V/µs
Negative Slew Rate
−SR
A V =1, V I N =2V P -P ,
R L =10kΩ
-
14
-
V/µs
MIN
TYP
MAX
UNIT
-
-
25
µA
9.5
GND
-
7.5
10
0.5
20
V
V
µA
● SHUTDOWN CHARACTERISTICS
(VDD=+10V, VSS=GND, VCOM= VDD /2, VSHDN= VDD, Ta= -40~85ºC unless otherwise specified)
PARAMETER
SYMBOL
Shutdown Supply Current
I DDS HDN
Turn On Voltage to Enable Part
Turn off Voltage to Disable Part
Shutdown Bias Current
V SHDNO N
V SHDNO FF
I S HDN
Ver.2008-05-16
TEST CONDITION
R L =∞, V SHDN =GND,
No Signal
I DD ≥400µA
I DD ≤25µA
V SHDN=GND
-5-
NJU7098
■ TYPICAL CHARACTERISTICS
Input Offset Voltage Distribution (VDD/VSS=±5V)
Input Offset Voltage Distribution (VDD/VSS=±2.5V)
VDD/VSS=±5V, RF=500kΩ, RS=50Ω, Gain=80dB, Ta=25ºC
30
25
20
Number of Amplifiers
Number of Amplifiers
VDD/VSS=±2.5V, RF=500kΩ, RS=50Ω, GV=80dB, Ta=25ºC
25
20
15
10
15
10
5
5
0
0
-10 -8
-6 -4 -2 0 2 4 6
Input Offset Voltage [µV]
8
-10 -8
10
Input Offset Voltage Distribution (VDD/VSS=±1.5V)
8
10
Input Offset Voltage vs. Temperature
VDD/VSS=±1.5V, RF=100kΩ, RS=10Ω, GV=80dB, Ta=25ºC
20
-6 -4 -2 0 2 4 6
Input Offset Voltage [µV]
VICM=0V
6
Input Offset Voltage [µV]
Number of Amplifiers
4
15
10
5
2
VDD/VSS=±5V
0
-2
-4
VDD/VSS=±2.5V
VDD/VSS=±1.5V
-6
0
-8
-10 -8
-6 -4 -2 0 2 4 6
Input Offset Voltage [µV]
8
10
-50
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
Input Bias Current vs. Temperature
AV=open, VICM=0V
Input Bias Current [pA]
500
400
300
VDD/VSS=±5.0V
200
VDD/VSS=±2.5V
VDD/VSS=±1.5V
100
0
-50
-6-
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
Ver.2008-05-16
NJU7098
■ TYPICAL CHARACTERISTICS
Supply Current vs. Supply Voltage
Supply Current vs. Temperature
AV=0dB
1200
1100
900
1000
VDD/VSS=±5.0V
800
900
Ta=-40ºC
Supply Current [µA]
Supply Current [µA]
AV=0dB
1000
800
700
600
Ta=25ºC
500
400
Ta=85ºC
300
700
600
500
VDD/VSS=±1.5V
400
VDD/VSS=±2.5V
300
200
200
100
100
0
0
0
1
2
3 4 5 6 7 8
Supply Voltage [V]
9
-50
10 11
-25
0
25
50
75
100
Ambient Temperature [ºC]
CMR vs. Frequency (Supply Voltage)
140
120
VDD/VSS=±5.0V
100
80
60
VDD/VSS=±1.5V
VDD/VSS=±2.5V
40
V+/V-=±5V, Ta=25ºC
140
Supply Voltage Rejection Ratio [dB]
Common Mode Rejection Ratio [dB]
SVR vs. Frequency
RF=100k, RS=10, GV=80dB, Ta=25ºC
160
20
0
120
100
+SVR
80
-SVR
60
40
20
0
1
10
1k
100
1000
Frequency [Hz]
10k
10000
100k
100000
1
10
SVR vs. Frequency
10k
10000
100k
100000
10k
10000
100k
100000
V+/V-=±1.5V, Ta=25ºC
Supply Voltage Rejection Ratio [dB]
140
120
+SVR
100
1k
100
1000
Frequency [Hz]
SVR vs. Frequency
V+/V-=±2.5V, Ta=25ºC
140
Supply Voltage Rejection Ratio [dB]
125
80
-SVR
60
40
20
0
120
100
+SVR
80
-SVR
60
40
20
0
1
Ver.2008-05-16
10
1k
100
1000
Frequency [Hz]
10k
10000
100k
100000
1
10
1k
100
1000
Frequency [Hz]
-7-
NJU7098
■ TYPICAL CHARACTERISTICS
Maximum Output Voltage vs. Load Resistance
Maximum Output Voltage vs. Load Resistance
(Supply Voltage)
GV=open, RL to GND, Ta=25ºC
(Supply Voltage)
GV=OPEN, Ta=25ºC
10
5
VDD=+10V
4
Maximum Output Voltage [V]
Maximum Output Voltage [V]
9
8
7
6
VDD=+5V
5
4
VDD=+3V
3
2
1
V+/V-=±5V
3
V+/V-=±2.5V
2
1
V+/V-=±1.5V
0
-1
-2
-3
-4
0
-5
1k
10k
100
1000
10000
Load Resistance [Ω]
10
100k
100000
10
0k
100
0k
1k
10k
Load Resistance [Ω]
100k
Maximum Output Voltage vs. Output Current
Maximum Output Voltage vs. Output Current
(Temperature)
VDD/VSS=±5.0V, GV=open,
(Temperature)
VDD/VSS=±2.5V, GV=open,
5
3
Maximum Output Voltage [V]
Maximum Output Voltage [V]
4
Ta=85ºC
3
Ta=25ºC
2
Ta=-40ºC
1
0
VDD/VSS=±5.0V
-1
-2
-3
2
Ta=-40ºC
1
Ta=85ºC
Ta=25ºC
0
VDD/VSS=±2.5V
-1
-2
-4
-5
-3
0
20
40
60
80
Output Current [mA]
100
0
20
40
60
80
Output Current [mA]
100
Maximum Output Voltage vs. Output Current
(Temperature)
VDD/VSS=±1.5V, GV=open,
Maximum Output Voltage [V]
1.5
1
Ta=-40ºC
Ta=25ºC
0.5
Ta=85ºC
0
VDD/VSS=±1.5V
-0.5
-1
-1.5
0
-8-
10
20
30
40
Output Current [mA]
50
60
Ver.2008-05-16
NJU7098
■ TYPICAL CHARACTERISTICS
40dBGain/Phase vs. Frequency
40dBGain/Phase vs. Frequency
(VDD/VSS=±5V, Temperature)
VDD/VSS=±5V, GV=40dB, RL=10kΩ, CL=50pF
(VDD/VSS=±5V, Load Capacitance)
VDD/VSS=±5V, GV=40dB, RL=10kΩ, Ta=25ºC
60
Ta=25ºC
40
20
Ta=85ºC
Phase
0
-20
-60
-40
-120
-60
100
0M
1k
0M
10k
100k
0M
0M
Frequency [Hz]
1M
Voltage Gain [dB]
CL=0pF
Ta=-40ºC
0
20
0
Phase
0
CL=50pF
CL=100pF
-20
-60
-40
-180
10M
-120
-60
100
0M
1k
0M
10k
100k
0M
0M
Frequency [Hz]
-180
10M
1M
40dBGain/Phase vs. Frequency
40dBGain/Phase vs. Frequency
(VDD/VSS=±2.5V, Temperature)
VDD/VSS=±2.5V, GV=40dB, RL=10kΩ, CL=50pF
(VDD/VSS=±2.5V, Load Capacitance)
VDD/VSS=±2.5V, GV=40dB, RL=10kΩ, Ta=25ºC
60
40
Gain
Phase [deg]
Gain
Phase [deg]
Voltage Gain [dB]
40
60
60
Ta=25ºC
Gain
40
Gain
Phase
0
0
-20
-60
-40
-120
-60
100
0M
1k
0M
10k
100k
0M
0M
Frequency [Hz]
1M
-180
10M
0
CL=50pF
CL=100pF
-20
-60
-120
-60
100
0M
1k
0M
10k
100k
0M
0M
Frequency [Hz]
-180
10M
1M
40dBGain/Phase vs. Frequency
(VDD/VSS=±1.5V, Temperature)
VDD/VSS=±1.5V, GV=40dB, RL=10kΩ, CL=50pF
(VDD/VSS=±1.5V, Load Capacitance)
VDD/VSS=±1.5V, GV=40dB, RL=10kΩ, Ta=25ºC
60
Gain
Gain
40
Phase
0
-20
-60
-40
-120
-60
100
0M
Ver.2008-05-16
1k
0M
10k
100k
0M
0M
Frequency [Hz]
1M
-180
10M
20
CL=0pF
Phase
0
0
CL=100pF
CL=50pF
-20
-60
-40
-120
-60
100
0M
1k
0M
10k
100k
0M
0M
Frequency [Hz]
1M
Phase [deg]
Ta=-40ºC
Ta=85ºC
Voltage Gain [dB]
Ta=25ºC
Phase [deg]
Voltage Gain [dB]
Phase
40dBGain/Phase vs. Frequency
20
0
0
-40
60
40
CL=0pF
20
Phase [deg]
Ta=85ºC
Voltage Gain [dB]
20
Phase [deg]
Voltage Gain [dB]
Ta=-40ºC
-180
10M
-9-
NJU7098
■ TYPICAL CHARACTERISTICS
Pulse Response (VDD/VSS=±5V,
Pulse Response (VDD/VSS=±5V, Load Capacitance)
2
0
1
-2
OUTPUT
-4
Ta=25ºC
-5
Ta=85ºC
-6
-1
Ta=-40ºC
-1
1
-2
-4
0
CL=50pF
-5
CL=0pF
-6
-2
-8
-2
Time [1µs/div]
Pulse Response (VDD/VSS=±2.5V, Temperature)
Pulse Response (VDD/VSS=±2.5V, Load Capacitance)
VDD/VSS=±2.5V, GV=0dB, f=100kHz,
VIN=±1V, RL=10kΩ, CL=50pF
VDD/VSS=±2.5V, GV=0dB, f=100kHz,
VIN=±1V, RL=10kΩ, Ta=25ºC
3
INPUT
2
0
-1
1
-2
OUTPUT
Ta=85ºC
-4
Ta=25ºC
0
-5
-6
-1
3
2
1
INPUT
2
0
-1
1
-2
-3
CL=100pF
OUTPUT
-4
CL=50pF
-6
-1
-7
-8
-2
CL=0pF
-8
-2
Time [µsec]
Time [1µs/div]
Pulse Response (VDD/VSS=±1.5V, Temperature)
Pulse Response (VDD/VSS=±1.5V,
Load Capacitance)
VDD/VSS=±1.5V, GV=0dB, f=100kHz,
VIN=±0.5V, RL=10kΩ, Ta=25ºC
INPUT
1
0
-0.5
0.5
-1
Ta=85ºC
-2
Ta=25ºC
0
-2.5
-3
-0.5
-3.5
-1
Time [1µs/div]
- 10 -
1.5
1
0.5
INPUT
1
0
-0.5
0.5
-1
-1.5
-2
CL=100pF
0
OUTPUT
CL=50pF
-2.5
-3
CL=0pF
-0.5
-3.5
Ta=-40ºC
-4
Input Voltage [V]
1.5
1
Output Voltage [V]
Input Voltage [V]
VDD/VSS=±1.5V, GV=0dB, f=100kHz,
VIN=±0.5V, RL=10kΩ, CL=50pF
OUTPUT
0
-5
Ta=-40ºC
-7
-1.5
-1
Time [1µs/div]
2
0.5
CL=100pF
OUTPUT
Output Voltage [V]
Input Voltage [V]
2
-7
-8
-3
INPUT
0
Output Voltage [V]
-7
1
0
1
-3
Input Voltage [V]
-3
Output Voltage [V]
-1
3
2
Output Voltage [V]
INPUT
Input Voltage [V]
3
2
1
VDD/VSS=±5.0V, GV=0dB, f=100kHz,
VIN=±1V, RL=10kΩ, Ta=25ºC
Output Voltage [V]
Input Voltage [V]
Temperature)
VDD/VSS=±5.0V, GV=0dB, f=100kHz,
VIN=±1V, RL=10kΩ, CL=50pF
-4
-1
Time [1µs/div]
Ver.2008-05-16
NJU7098
■ TYPICAL CHARACTERISTICS
Voltage Noise vs. Frequency (VDD/VSS=±5.0V)
500
450
400
400
350
350
300
300
250
250
Ta=25ºC
200
Ta=85ºC
Ta=85ºC
150
100
100
50
Ta=-40ºC
0
50
Ta=-40ºC
0
1k
100
1000
Frequency [Hz]
10
500
10k
10000
1k
100
1000
Frequency [Hz]
Voltage Noise
VDD/VSS-=±1.5V, GV=40dB, RF=100kΩ, RS=1kΩ, RG=1kΩ
VDD/VSS=±5.0V, f=1~100Hz
350
300
Ta=25ºC
Ta=85ºC
200
150
100
Ta=-40ºC
50
20
Equivalent Input Noise Voltage
[µV]
400
250
10
Voltage Noise vs. Frequency (VDD/VSS=±1.5V)
450
Equivalent Input Noise Voltage
[nV/√Hz]
Ta=25ºC
200
150
10k
10000
15
10
5
0
-5
-10
-15
-20
0
10
20
1k
100
1000
Frequency [Hz]
Time [1s/div]
Voltage Noise
Voltage Noise
VDD/VSS=±2.5V, f=1~100Hz
VDD/VSS=±1.5V, f=1~100Hz
15
10
5
0
-5
-10
-15
-20
20
15
10
5
0
-5
-10
-15
-20
Time [1s/div]
Ver.2008-05-16
10k
10000
Equivalent Input Noise Voltage
[µV]
Equivalent Input Noise Voltage
[µV]
VDD/VSS=±2.5V, GV=40dB, RF=100kΩ, RS=1kΩ, RG=1kΩ
500
Equivalent Input Noise Voltage
[nV/√Hz]
450
Equivalent Input Noise Voltage
[nV/√Hz]
Voltage Noise vs. Frequency (VDD/VSS=±2.5V)
VDD/VSS=±5.0V, GV=40dB, RF=100kΩ, RS=1kΩ, RG=1kΩ
Time [1s/div]
- 11 -
NJU7098
■ TYPICAL CHARACTERISTICS
Sampling Frequency vs. Temperature
GV=40dB, RF=100kΩ, RS=1kΩ, RG=1kΩ
Sampling Frequency [kHz]
10
9
VDD=3V
8
VDD=5V
7
VDD=10V
6
5
8.0
-25
No Phase Reversal
No Phase Reversal
V+/V-=±2.5V, AV=0dB, RL=2kΩ to GND, CL=50pF
4.0
2.0
Output
-2.0
-4.0
-6.0
Input
3.0
Input
4.0
0.0
125
V+/V-=±5.0V, AV=0dB, RL=2kΩ to GND, CL=50pF
6.0
Input/Output Voltage [V]
0
25
50
75
100
Ambient Temperature [ºC]
Input/Output Voltage [V]
-50
2.0
1.0
Output
0.0
-1.0
-2.0
-3.0
-8.0
-4.0
Time [0.2ms/div]
Time [0.2ms/div]
No Phase Reversal
2.5
VDD/VSS=±1.5V, AV=0dB, RL=2kΩ to GND, CL=50pF
Input/Output Voltage [V]
2.0
Input
1.5
1.0
0.5
Output
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
Time [0.2ms/div]
- 12 -
Ver.2008-05-16
NJU7098
■ TYPICAL CHARACTERISTICS
Positive Overload Recovery Response
Negative Overload Recovery Response
INPUT
0
0
[2V/div]
[0.1V/div]
0
V+/V-=±5.0V, AV=100, R1=1kΩ, R2=100kΩ
0
0
0
0
0
0
Positive Overload Recovery Response
Negative Overload Recovery Response
V+/V-=±2.5V, AV=100, R1=1kΩ, R2=100kΩ
V+/V-=±2.5V, AV=100, R1=1kΩ, R2=100kΩ
[0.1V/div]
Time [0.1ms/div]
INPUT
0
0
OUTPUT
Time [0.1ms/div]
0
INPUT
0
0
OUTPUT
0
[1V/div]
[0.1V/div]
0
0
0
INPUT
0
0
0
[1V/div]
0
0
OUTPUT
[2V/div]
[0.1V/div]
V+/V-=±5.0V,
AV=100, R1=1kΩ, R2=100kΩ
0
0
0
0
0
0
0
OUTPUT
0
0
Time [0.1ms/div]
Time [0.1ms/div]
Positive Overload Recovery Response
Negative Overload Recovery Response
V+/V-=±1.5V, AV=100, R1=1kΩ, R2=100kΩ
V+/V-=±1.5V, AV=100, R1=1kΩ, R2=100kΩ
[0.1V/div]
[0.1V/div]
INPUT
0
INPUT
0
OUTPUT
[0.5V/div]
[0.5V/div]
0
OUTPUT
0
Time [0.1ms/div]
Ver.2008-05-16
Time [0.1ms/div]
- 13 -
NJU7098
■ TYPICAL CHARACTERISTICS
Supply Current vs. Shutdown Pin Voltage
Supply Current vs. Shutdown Pin Voltage
(Temperature)
VDD=+10V, GV=0dB,
(Temperature)
VDD=+5V, GV=0dB,
1000
800
Ta=-40ºC
900
Ta=25ºC
Supply Current [µA]
Supply Current [µA]
800
700
600
Ta=-40ºC
700
Ta=85ºC
500
400
300
200
Ta=25ºC
600
500
Ta=85ºC
400
300
200
100
100
0
0
0
1
2
3
4
5
6
7
8
Shutdown Pin Voltage [V]
9
10
0
1
2
3
4
Shutdown Pin Voltage [V]
5
Supply Current vs. Shutdown Pin Voltage
(Temperature)
VDD=+3V, GV=0dB,
700
Ta=-40ºC
Supply Current [µA]
600
Ta=25ºC
500
Ta=85ºC
400
300
200
100
0
0
0.5
1
1.5
2
2.5
Shutdown Pin Voltage [V]
3
[CAUTION]
The specifications on this data book are only given for information,
without any guarantee as regards either mistakes or omissions. The
application circuits in this data book are described only to show
representative usages of the product and not intended for the
guarantee or permission of any right including the industrial rights.
- 14 -
Ver.2008-05-16