NTE16 (NPN) & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Electrical Charactristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA 40 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 50µA 50 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 50µA 5 – – V Collector Cutoff Current ICBO VCB = 30V – – 0.5 µA Emitter Cutoff Current IEBO VEB = 4V – – 0.5 µA DC Current Gain hFE VCE = 6V, IC = 1mA 270 – 560 IC = 50mA, IB = 5mA – – 0.4 V – 0.1 0.5 V – 180 – MHz – 140 – MHz – 2.0 3.5 pF – 4.0 5.0 pF Collector–Emitter Saturation Voltage NTE16 VCE(sat) NTE17 Transition Frequency NTE16 fT VCE = 12V, IE = 2mA NTE17 Output Capacitance NTE16 NTE17 Cob VCB = 12V, IE = 0, f = 1MHz .102 (2.6) .280 (7.11) E .100 (2.54) .051 (1.29) C B .185 (4.7) .138 (3.5) .022 (0.55)