NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D High Breakdown Voltage: VCEO = 80V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CEO IC = 2mA 80 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 50µA 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 50µA 5 – – V Collector Cutoff Current ICBO VCB = 50V – – 0.5 µA Emitter Cutoff Current IEBO VEB = 4V – – 0.5 µA DC Current Gain hFE VCE = 3V, IC = 100mA 120 – 270 – – 0.2 0.4 V VCE = 10V, IE = 50mA – 100 – MHz VCB = 10V, IE = 0, f = 1MHz – 14 20 pF Collector Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA Transition Frequency fT Output Capacitance Cob .102 (2.6) .280 (7.11) E .100 (2.54) .051 (1.29) C B .185 (4.7) .138 (3.5) .022 (0.55)