APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT56M50B2 APT56M50L Single die MOSFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 56 Continuous Drain Current @ TC = 100°C 35 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1200 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 28 A 1 175 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 780 RθJC Junction to Case Thermal Resistance 0.16 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 12 in·lbf 1.4 N·m 8-2006 Typ Rev A Min Characteristic 050-8073 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 28A Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance TJ = 125°C f = 1MHz 5 Effective Output Capacitance, Energy Related Qg Total Gate Charge Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Current Rise Time Turn-Off Delay Time Min VGS = 0V, VDS = 25V Co(er) Qgs 0.60 0.085 4 -10 0.10 5 100 500 ±100 Test Conditions VDS = 50V, ID = 28A Effective Output Capacitance, Charge Related tf VGS = 0V Max Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified 4 td(off) TJ = 25°C Typ VGS = ±30V Co(cr) tr VDS = 500V Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250µA 3 APT56M50B2_L VGS = 0V, VDS = 0V to 333V Co(er) = -2.04E-7 2 VDS + 4.76E-8 Typ 42 8800 120 945 Max pF 550 + 1.36E-10 Unit S 275 VDS 220 VGS = 0 to 10V, ID = 28A, nC 50 100 38 45 100 33 VDS = 250V Resistive Switching VDD = 333V, ID = 28A RG = 4.7Ω 6 , VGG = 15V Current Fall Time ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage ISD = 28A, TJ = 25°C, VGS = 0V trr Reverse Recovery Time ISD = 28A 3 Qrr Reverse Recovery Charge Peak Recovery dv/dt Typ Max Unit 100 A G VSD dv/dt Min D 200 S diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 28A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C 1 660 13.2 V ns µC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 3.06mH, RG = 4.7Ω, IAS = 28A. 050-8073 Rev A 8-2006 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of VDSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of VDSS. The equation in the test conditions box can be used to calculate Co(er) for any value of VDS less than VDSS. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 200 V GS = 10V TJ = -55°C J V 120 TJ = 25°C 80 40 TJ = 150°C TJ = 125°C 6V 70 60 50 40 30 20 5V 10 4.5V 0 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 NORMALIZED TO VGS = 10V @ 28A 2.0 1.0 0.5 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 125 TJ = -55°C 100 TJ = 25°C 75 TJ = 125°C 50 25 0 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 70 0 10 8 6 4 2 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 60 TJ = 25°C 50 Ciss 10,000 TJ = -55°C C, CAPACITANCE (pF) TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 100V 10 VDS = 250V 8 6 VDS = 400V 4 2 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 175 ID = 28A 14 0 10 50 150 125 100 TJ = 25°C 75 TJ = 150°C 50 25 0 1.0 1.2 1.4 0.6 0.8 0.2 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 8-2006 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 40 30 20 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current Rev A 0 ISD, REVERSE DRAIN CURRENT (A) 0 050-8073 gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 150 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 175 1.5 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics Figure 1, Output Characteristics 2.5 = 7,8 & 10V GS 80 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) T = 125°C 90 160 0 APT56M50B2_L 100 APT56M50B2_L 250 250 100 100 I I DM 13µs 100µs 1ms Rds(on) 10ms 100ms DC line 1 TJ = 125°C TC = 75°C 1 13µs 100µs 10 1ms 10ms Rds(on) 0.1 100ms DC line TJ = 150°C TC = 25°C 1 Scaling for Different Case & Junction Temperatures: ID = ID(T = 25 C)*(TJ - TC)/125 ° C 600 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 600 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area TJ (°C) 1 TC (°C) 0.0337 0.0687 0.0575 Dissipated Power (Watts) 0.000713 0.0189 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ZEXT 10 0.1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DM 0.527 Figure 11, Transient Thermal Impedance Model 0.16 D = 0.9 0.14 0.7 0.12 0.10 0.5 Note: 0.08 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.18 0.3 0.06 t2 SINGLE PULSE 0.1 0.05 0.04 t1 = Pulse Duration t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.02 0 t1 10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 10-5 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 8-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8073 Rev A Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 1.0