APT44F80B2 APT44F80L 800V, 47A, 0.21Ω Max trr ≤370ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® TO-264 APT44F80B2 APT44F80L D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current @ TC = 25°C 47 Continuous Drain Current @ TC = 100°C 29 IDM Pulsed Drain Current 1 173 VGS Gate - Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1980 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 24 A ID A Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C - - 1135 RθJC Junction to Case Thermal Resistance - - .11 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface - .11 - -55 - 150 - - 300 - 0.22 - oz - 6.2 - g - - 10 in·lbf - - 1.1 N·m TJ, TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com °C/W °C Rev D 8-2011 Characteristic 050-8161 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Min VGS = 0V, ID = 250μA 800 Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Co(cr) Co(er) 5 Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf V 0.17 0.21 Ω 4 5 V 2.5 V/°C -10 mV/°C VDS = 800V TJ = 25°C 250 VGS = 0V TJ = 125°C 1000 VGS = ±30V μA ±100 nA Max Unit TJ = 25°C unless otherwise specified Test Conditions Min VDS = 50V, ID = 24A Typ S 43 9330 VGS = 0V, VDS = 25V f = 1MHz 160 930 Effective Output Capacitance, Energy Related Total Gate Charge Unit VGS = 10V, ID = 24A VGS = VDS, ID = 2.5mA Effective Output Capacitance, Charge Related Qg Max 0.87 Output Capacitance 4 Typ Reference to 25°C, ID = 250μA Parameter gfs Coss Test Conditions 3 Threshold Voltage Temperature Coefficient APT44F80B2_L pF 440 VGS = 0V, VDS = 0V to 533V 220 305 VGS = 0 to 10V, ID = 24A, VDS = 400V 51 nC 155 55 Resistive Switching Current Rise Time 75 VDD = 400V, ID = 24A Turn-Off Delay Time RG = 4.7Ω , VGG = 15V Current Fall Time ns 230 6 70 Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge MOSFET symbol reverse p-n junction diode (body diode) 050-8161 Rev D 8-2011 Max diSD/dt = 100A/μs Reverse Recovery Current Peak Recovery dv/dt Unit 47 G 173 A S ISD = 24A, TJ = 25°C, VGS = 0V VDD = 100V dv/dt Typ showing the integral 1 ISD = 24A 3 Irrm Min D 1.0 TJ = 25°C 320 370 TJ = 125°C 590 710 TJ = 25°C 1.91 TJ = 125°C 5.18 TJ = 25°C 12.1 TJ = 125°C 18.1 ISD ≤ 24A, di/dt ≤1000A/μs, VDD = 400V, TJ = 125°C 1 2 3 4 5 nS μC A 25 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. Pulse test: Pulse Width < 380μs, duty cycle < 2%. Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. V V/ns APT44F80B2_L 100 V GS 50 = 10V T = 125°C 80 = 10&15V GS 6V 40 60 ID, DRIAN CURRENT (A) TJ = 25°C 40 20 TJ = 150°C 5.5V 30 20 5V 10 4.5V TJ = 125°C 0 4V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 160 NORMALIZED TO VGS = 10V @ 24A 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 2.5 2.0 1.5 1.0 0.5 120 100 TJ = -55°C 80 TJ = 25°C 60 TJ = 125°C 40 20 0 0-55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 80 Ciss 10,000 70 TJ = -55°C 60 C, CAPACITANCE (pF) TJ = 25°C 50 TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 00 10 20 30 40 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 10 50 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 160 ID = 24A 14 12 VDS = 160V 10 8 VDS = 400V 6 VDS = 640V 4 2 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) VGS, GATE-TO-SOURCE VOLTAGE (V) 16 0 140 120 100 TJ = 25°C 80 60 TJ = 150°C 40 20 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev D 8-2011 gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 140 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 050-8161 ID, DRAIN CURRENT (A) V J TJ = -55°C APT44F80B2_L 200 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 10 13μs 100μs Rds(on) 1ms 1 10ms 0.1 TJ = 125°C TC = 75°C 1 10 13μs 100μs Rds(on) 1ms TJ = 150°C TC = 25°C 1 10ms Scaling for Different Case & Junction 100ms Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 100ms DC line 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0. 1 0.08 0.7 0.06 0.5 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.12 0.3 0.04 t1 t2 0.02 t1 = Pulse Duration 0.1 t 0.05 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 0 10-5 10-4 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drai n Drai n 20.80 (.819) 21.46 (.845) 050-8161 Rev D 8-2011 4.50 (.177) Max. 0.40 (.016) 1.016(.040) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drai n Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) 2.29 (.090) 2.69 (.106) Gate Drai n Source