MICROSEMI APT41F100J

APT41F100J
1000V, 41A, 0.21Ω Max, trr ≤400ns
N-Channel FREDFET
S
S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
G
SO
2
T-
27
"UL Recognized"
file # E145592
ISOTOP ®
D
APT19F100J
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
41
Continuous Drain Current @ TC = 100°C
26
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
4075
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
33
A
1
260
Thermal and Mechanical Characteristics
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
960
RθJC
Junction to Case Thermal Resistance
0.13
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
-55
150
°C/W
°C
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
3-2007
TJ,TSTG
0.15
Rev A
Min
Characteristic
050-8128
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
1000
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1000V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Min
Test Conditions
VDS = 50V, ID = 33A
f = 1MHz
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
Max
75
18500
245
1555
VGS = 0V, VDS = 25V
Effective Output Capacitance, Charge Related
µA
nA
Unit
S
pF
635
VGS = 0V, VDS = 0V to 667V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tf
0.21
5
Unit
V
V/°C
Ω
V
mV/°C
TJ = 25°C unless otherwise specified
4
td(off)
Max
250
1000
±100
TJ = 125°C
VGS = ±30V
Co(cr)
tr
0.19
4
-10
TJ = 25°C
VGS = 0V
Parameter
gfs
3
VGS = VDS, ID = 5mA
Threshold Voltage Temperature Coefficient
Typ
1.15
VGS = 10V, ID = 33A
3
IDSS
Symbol
Reference to 25°C, ID = 250µA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT41F100J
Current Rise Time
Turn-Off Delay Time
325
570
100
270
55
55
235
55
VGS = 0 to 10V, ID = 33A,
VDS = 500V
Resistive Switching
VDD = 667V, ID = 33A
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
A
260
S
1.0
400
800
TJ = 25°C
TJ = 125°C
TJ = 25°C
VDD = 100V
TJ = 125°C
diSD/dt = 100A/µs
TJ = 25°C
Unit
41
G
ISD = 33A, TJ = 25°C, VGS = 0V
ISD = 33A 3
Max
TJ = 125°C
ISD ≤ 33A, di/dt ≤1000A/µs, VDD = 667V,
TJ = 125°C
3.3
8.0
17.2
24.6
V
ns
µC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 7.48mH, RG = 2.2Ω, IAS = 33A.
050-8128
Rev A
3-2007
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -5.37E-7/VDS^2 + 9.48E-8/VDS + 1.83E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
180
V
GS
= 10V
J
140
120
100
80
TJ = 25°C
60
40
TJ = 150°C
GS
40
30
5V
20
0
30
25
20
15
10
5
0
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (A)
200
2.0
1.5
1.0
0.5
150
30,000
80
10,000
TJ = -55°C
60
TJ = 25°C
50
TJ = 125°C
40
30
20
TJ = 25°C
TJ = 125°C
50
90
70
TJ = -55°C
100
0
0
25 50 75 100 125 150
0
-55 -25
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
C, CAPACITANCE (pF)
0
8
7
6
5
4
3
2
1
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1000
Coss
100
Crss
10
1000
800
600
400
200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
250
ID = 33A
14
0
10
40
200
150
TJ = 25°C
100
TJ = 150°C
50
0
1.5
1.2
0.9
0.6
0.3
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
3-2007
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
30
20
10
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
Rev A
0
ISD, REVERSE DRAIN CURRENT (A)
0
050-8128
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
gfs, TRANSCONDUCTANCE
250
VGS = 10V @ 33A
2.5
30
25
20
15
10
5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
Figure 1, Output Characteristics
3.0
= 6, 7, 8 & 9V
V
10
TJ = 125°C
20
0
T = 125°C
50
TJ = -55°C
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
160
APT41F100J
60
100
100
I
DM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
APT41F100J
300
300
10
13µs
100µs
1ms
Rds(on)
1
10ms
100ms
I
DM
13µs
10
100µs
Rds(on)
TJ = 150°C
TC = 25°C
1
0.1
C
°
1000
100
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
1000
100
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
TJ (°C)
1
TC (°C)
0.0270
0.102
Dissipated Power
(Watts)
0.0767
ZEXT
1
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25 C)*(TJ - TC)/125
DC line
0.1
1ms
1.04
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 11, Transient Thermal Impedance Model
D = 0.9
0.12
0.10
0.7
0.08
0.5
0.06
Note:
0.3
0.04
t1
t2
0.02
0
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.14
t1 = Pulse Duration
t
0.1
0.05
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-1
10-2
10-3
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10-4
1.0
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3-2007
14.9 (.587)
15.1 (.594)
Rev A
3.3 (.129)
3.6 (.143)
38.0 (1.496)
38.2 (1.504)
050-8128
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.