PACELEADER FM140-N

FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
FEATURES
MECHANICAL DATA
• Batch process design, excellent power dissipation offers
•
•
•
•
•
•
•
•
•
0.016(0.4) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323
• Terminals :Plated terminals, solderable per MIL-STD-750,
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Very tiny plastic SMD package.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MAXIMUM RATING
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
(AT T A=25 oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V R = V RRM T A = 25 OC
Reverse current
Junction to ambient
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
*3
VR
(V)
FM120-N
20
14
20
FM130-N
30
21
30
FM140-N
40
28
40
FM150-N
50
35
50
FM160-N
60
42
60
FM180-N
80
56
80
FM1100-N
100
70
100
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*4
VF
(V)
MAX.
UNIT
A
I FSM
30
A
0.5
mA
10
O
90
CJ
T STG
V RMS*2
(V)
TYP.
1.0
R èJA
Storage temperature
*1
V RRM
(V)
MIN.
IO
IR
V R = V RRM T A = 125 OC
Thermal resistance
SYMBOLS
Symbol
pF
120
-65
C/W
+175
O
C
Operating
temperature
T J, ( OC)
*1 Repetitive peak reverse voltage
0.55
-55 to +125
*2 RMS voltage
*3 Continuous reverse voltage
0.70
-55 to +150
0.85
1
*4 Maximum forward voltage
FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
Rating and characteristic curves (FM120-N THRU FM1100-N)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
~F
M
14
0N
3.0
~F
M
16
N
0-
-N
0.2
FM
15
0N
0
11
FM
N~
0-
40
0.4
10
FM
12
0N
15
FM
1
FM
N~
0-
0.6
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
0N
50
1.0
12
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
1.2
00
11
FM
~
N
018
FM
1.0
-N
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
30
.01
24
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
18
8.3ms Single Half
TJ=25 C
Sine Wave
12
JEDEC method
6
FIG.5 - TYPICAL REVERSE
0
CHARACTERISTICS
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
350
300
250
200
150
100
10
1.0
TJ=75 C
.1
TJ=25 C
50
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
2
FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
Symbol
1
2
Marking
Type number
Marking code
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
12
13
14
15
16
18
10
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
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PACKAGE
A
B
C
SOD-323
0.059 (1.50)
0.039 (1.00)
0.051 (1.30)
3
1
2