SM220MH~SM2100MH 20 ~ 100 V 2.0 Amp Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES z z z z z z z z Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. Low profile surface mounted application. in order to optimize board space. Low power loss and low forward voltage drop High surge, high current capability, and high efficiency. Fast switching for high efficiency. Guard-ring for overvoltage protection. Ultra high-speed switching Silicon epitaxial planar chip, metal silicon junction. SOD-123MH A B F D C PACKAGING INFORMATION z z z z E Small plastic SMD package. Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0110 g (Approximately) REF. 1 A B C 2 Cathode Anode Millimeter Min. Max. 3.30 3.70 1.40 1.80 0.60 1.00 E REF. D E F Millimeter Min. Max. 3.10 (MAX.) 0.80 (TYP.) 0.30 (TYP.) MARKING CODE Part Number SM220MH SM230MH SM240MH SM250MH Marking Code 22 23 24 25 Part Number SM260MH SM280MH SM2100MH Marking Code 26 28 20 MAXIMUM RATINGS (Ta = 25°C unless otherwise specified.) PART NUMBERS PARAMETERS SYMBOL SM 220 MH SM 230 MH SM 240 MH SM 250 MH SM 260 MH SM 280 MH SM 2100 MH UNITS Recurrent Peak Reverse Voltage (Max.) VRRM 20 30 40 50 60 80 100 V RMS Voltage (Max.) TESTING CONDITIONS VRMS 14 21 28 35 42 56 70 V Reverse Voltage (Max.) VR 20 30 40 50 60 80 100 V Forward Voltage (Max.) VF Forward Rectified Current (Max.) IO 2.0 A See Fig.1 IFSM 40 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Peak Forward Surge Current Reverse Current (Max.) Thermal Resistance (Typ.) Diode Junction Capacitance (Typ.) Storage and Operating Temperature Range 01-December-2008 Rev. A 0.50 0.85 0.5 IR 85 °C/W 160 CJ -65 ~ 175, -55 to 125 V mA 10 RθJA TSTG, TJ 0.70 pF -65 ~ 175, -55 to 150 VR=VRRM, Ta=25°C VR=VRRM, Ta=125°C Junction to ambient f=1MHz and applied 4V DC reverse voltage °C Page 1 of 2 SM220MH~SM2100MH 20 ~ 100 V 2.0 Amp Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RATINGS AND CHARACTERISTIC CURVES FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0- 025 0.4 3.0 SM 0.8 10 SM 22 1.2 INSTANTANEOUS FORWARD CURRENT,(A) MH 010 M2 ~S MH 025 MH 0SM 24 SM 1.6 MH ~S M2 40 M -M H~ H SM 26 0M H 50 2.0 ~ MH 022 SM AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 2.4 1.0 M 0- 28 SM H~ 21 SM 00 -M H TJ=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 50 .01 40 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 30 8.3ms Single Half TJ=25 C Sine Wave 20 JEDEC method 10 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 0 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 700 600 500 400 300 200 10 1.0 TJ=75 C .1 TJ=25 C 100 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 01-December-2008 Rev. A 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) Page 2 of 2