PSD751H SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 30 VOLTS SOD-323 .091(2.30) 1.63(2.70) .063(1.60) .071(1.80) .009(0.25) .016(0.40) 1 .045(1.15) .053(1.35) 2 0.15R .031(0.80) .039(1.00) .0035(0.089) .015(0.377) .00(0.00) .004(0.10) FEATURES DESCRIPTION Extremely Low VF Very Small Conduction Losses Schottky Barrier Diodes Encapsulated in a SOD-323 Package These schottky barrier diodes are designed for high speed Switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and Portable applications where space is limited MAXIMUM RATING (TA=25 C unless otherwise noted) o Characteristics Symbol PSD751H Unit Breakdown Voltage BV 40 Volts Continuous Reverse Voltage VR 30 Volts Average Rectified Forward Current IO 30 mAmps Peak Forward Surge Current (8.3ms1/2 Sine Wave) IFSM 200 mAmps Storage Temperature Tstg -40 to+125 C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) o Characteristics Symbol Device Marking PSD751H Unit JV Maximum Instantneous Forward Voltage IF=1mA VF 0.37 Volts Maximum Instantneous Reverse Current (VR=30V) IR 0.5 µAmps Typical Junction Capacitance (VR=10V, f=1MHz) CJ 20 PF www.paceleader.tw 1 PSD751H SURFACE MOUNT SCHOTTKY BARRIER DIODES Electrical Characteristic Curves (Ta=25 C Unless Specified Otherwise) 100µ 1000m Ta=125 C 12 5 C 10m 1m Ta=75 C Ta=25 C 100µ Ta= -25 C 10µ 1µ REVERSE CURRENT:IR(A) 100m Ta = FORWARD CURRENT:IF (A) Typ. pulse measurement 0 0.40 0.2 0.6 1.0 0.8 1.2 10µ 1µ Ta=25 C 100n Ta=-25 C 10n 1n 1.4 Ta=75 C Typ. pulse measurement 0 10 100 Ta=25 C f=1MHz 50 20 10 5 2 1 0 2 20 25 30 FIG 2. Reverse Characteristics Fig 1.Forward Characteristics 4 6 8 10 12 REVERSE VOLTAGE:VR(V) FIG. 3 Capacitance Between Terminal Chacteristics www.paceleader.tw 15 REVERSE VOLTAGE: VR(V) FORWARD VOLTAGE :VF (V) CAPACITANCE BETWEEN TERMINAL CT(pF 5 2 14 35