PSL12-N thru PSL14-N SILICON EPITAXIAL PLANER TYPE Low VF Chip Schottky Diodes SOD-323 0.106 (2.7) 0.091 (2.3) 0.012(0.3) Typ . 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) 0.016(0.4) Typ . 0.016(0.4) Typ . Dimensions in inches and (millimeters) FEATURES MECHANICAL DATA Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Ufizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of ML-S-19500/228 Low leakage current Case JEDEC SOD-323 molded plastic Terminals Solder plated, solderable per MIL-STD-750, Method 2026 Polarity Indicated by cathode band Mounting Position Any MAXIMUM RATINGS (at TA=25 C unless otherwise noted) o PARAMETER CONDITIONS SYMBOL Forward rectified current See Fig.2 Forward surge current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Reverse current VR=VRRM TA=250C Typ. Max. UNITS IO 1.0 A IFSM 30 A 1.0 mA Min. IR 0 VR=VRRM TA=100 C 10 RJA Thermal resistance Junction to ambient Diode junction capacitance F=1MHz and applied 4vDC reverse voltage Storage temperature *1 *2 *3 -55 *4 VRMS (V) VR (V) PSL12-N L2 20 14 20 0.38 PSL13-N L3 30 21 30 0.40 PSL14-N L4 40 28 40 0.40 www.paceleader.tw 1 pF +150 VRRM (V) *1 Repetitive peak reverse peak reverse *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage C/W 130 CJ TSTG MARKING CODE SYMBOLS mA 0 80 VF (V) 0 C Operating Temperature (0C) -55 to + 125 PSL12-N thru PSL14-N SILICON EPITAXIAL PLANER TYPE Crownpo Technology www.paceleader.tw 2