60EPU04/60APU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM 60EPU04 FEATURES 60APU04 • Ultrafast recovery • 175 °C operating junction temperature • Designed and qualified for industrial level Cathode to base Cathode to base BENEFITS • Reduced RFI and EMI 2 2 • Higher frequency operation • Reduced snubbing 1 Cathode TO-247AC modified • Reduced parts count 3 Anode 1 Anode 3 Anode DESCRIPTION/APPLICATIONS TO-247AC These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRODUCT SUMMARY trr (typical) 50 ns IF(AV) 60 A VR 400 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Continuous forward current VALUES UNITS 400 V IF(AV) TC = 127 °C 60 Single pulse forward current IFSM TC = 25 °C 600 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures TJ, TStg A - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 400 - - IF = 60 A - 1.05 1.25 IF = 60 A, TJ = 175 °C - 0.87 1.03 IF = 60 A, TJ = 125 °C - 0.93 1.10 VR = VR rated - - 50 µA IR = 100 µA UNITS V Reverse leakage current IR TJ = 150 °C, VR = VR rated - - 2 mA Junction capacitance CT VR = 400 V - 50 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Document Number: 93020 Revision: 02-Jun-08 For technical questions, contact: [email protected] www.vishay.com 1 60EPU04/60APU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS Reverse recovery charge IRRM Qrr TYP. MAX. UNITS IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V - 50 60 TJ = 25 °C - 85 - - 145 - - 8.8 - - 15.4 - TJ = 25 °C - 375 - TJ = 125 °C - 1120 - MIN. TYP. MAX. - - 0.70 - 0.2 - - 5.5 - g - 0.2 - oz. 1.2 (10) - 2.4 (20) N·m (lbf · in) TJ = 125 °C Peak recovery current MIN. TJ = 25 °C TJ = 125 °C IF = 60 A dIF/dt = 200 A/µs VR = 200 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Mounting torque Marking device www.vishay.com 2 UNITS K/W Case style TO-247AC modified 60EPU04 Case style TO-247AC 60APU04 For technical questions, contact: [email protected] Document Number: 93020 Revision: 02-Jun-08 60EPU04/60APU04 Ultrafast Soft Recovery Diode, Vishay High Power Products 60 A FRED PtTM 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 100 TJ = 175 °C 10 TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.5 0 1 2 1.5 0 2.5 200 100 300 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 10 0 100 1000 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93020 Revision: 02-Jun-08 For technical questions, contact: [email protected] www.vishay.com 3 60EPU04/60APU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM 200 160 140 Square wave (D = 0.50) 80 % rated VR applied 120 IF = 120 A IF = 60 A IF = 40 A 160 DC 140 120 100 100 80 See note (1) 60 100 80 0 20 40 60 80 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3500 100 RMS limit 3000 80 VR = 400 V TJ = 125 °C TJ = 25 °C 2500 60 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 40 20 Qrr (nC) Average Power Loss (W) VR = 400 V TJ = 125 °C TJ = 25 °C 180 trr (ns) Allowable Case Temperature (°C) 180 DC 20 40 60 80 IF = 40 A IF = 60 A IF = 120 A 1500 1000 500 0 0 2000 100 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93020 Revision: 02-Jun-08 60EPU04/60APU04 Ultrafast Soft Recovery Diode, Vishay High Power Products 60 A FRED PtTM VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93020 Revision: 02-Jun-08 For technical questions, contact: [email protected] www.vishay.com 5 60EPU04/60APU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM ORDERING INFORMATION TABLE Device code 60 E P U 04 - 1 2 3 4 5 6 1 - Current rating (60 = 60 A) 2 - Circuit configuration: E = Single diode, 2 pins A = Single diode, 3 pins 3 - Package: P = TO-247AC modified 4 - Type of silicon: U = Ultrafast recovery 5 - 6 - Voltage rating (04 = 400 V) None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95001 Part marking information http://www.vishay.com/doc?95006 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93020 Revision: 02-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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