VISHAY BZG03C100

BZG03C-Series
Vishay Semiconductors
Zener Diodes
Features
•
•
•
•
•
•
•
Glass passivated junction
High reliability
e3
Voltage range 10 V to 270 V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
15811
Applications
Mechanical Data
Voltage stabilization
Case: DO-214AC
Weight: approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA < 25 K/W, Tamb = 100 °C
Pdiss
3
W
RthJA < 100 K/W, Tamb = 50 °C
Pdiss
1.25
W
Non repetitive peak surge power tp = 100 µs sq.pulse, Tj = 25 °C
dissipation
prior to surge
PZSM
600
W
Power dissipation
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
- 65 to + 150
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJL
25
K/W
mounted on epoxy-glass hard
tissue, Fig. 1a
RthJA
150
K/W
mounted on epoxy-glass hard
tissue, Fig. 1b
RthJA
125
K/W
mounted on Al-oxid-ceramic
(Al2O3), Fig. 1b
RthJA
100
K/W
Junction lead
Junction ambient
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85593
Rev. 1.7, 15-Sep-05
Test condition
IF = 0.5 A
Symbol
VF
Min
Typ.
Max
Unit
1.2
V
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BZG03C-Series
Vishay Semiconductors
Electrical Characteristics
BZG03C...
Partnumber
Zener Voltage Range
Dynamic Resistance
VZ @ IZT
V
min
max
Temperature
Coefficient of Zener
Voltage
rzj and TKVZ @ IZT
IZT
[email protected] IZT
Ω
mA
%/K
typ
max
Reverse Leakage
Current
IR @ V R
µA
min
max
max
V
BZG03C10
9.4
10
10.6
2
4
50
0.05
0.09
10
7.5
BZG03C11
10.4
11
11.6
4
7
50
0.05
0.1
4
8.2
BZG03C12
11.4
12
12.7
4
7
50
0.05
0.1
3
9.1
BZG03C13
12.4
13
14.1
5
10
50
0.05
0.1
2
10
BZG03C15
13.8
15
15.6
5
10
50
0.05
0.1
1
11
BZG03C16
15.3
16
17.1
6
15
25
0.06
0.11
1
12
BZG03C18
16.8
18
19.1
6
15
25
0.06
0.11
1
13
BZG03C20
18.8
20
21.2
6
15
25
0.06
0.11
1
15
BZG03C22
20.8
22
23.3
6
15
25
0.06
0.11
1
16
BZG03C24
22.8
24
25.6
7
15
25
0.06
0.11
1
18
BZG03C27
25.1
27
28.9
7
15
25
0.06
0.11
1
20
BZG03C30
28
30
32
8
15
25
0.06
0.11
1
22
BZG03C33
31
33
35
8
15
25
0.06
0.11
1
24
BZG03C36
34
36
38
21
40
10
0.06
0.11
1
27
BZG03C39
37
39
41
21
40
10
0.06
0.11
1
30
BZG03C43
40
43
46
24
45
10
0.07
0.12
1
33
BZG03C47
44
47
50
24
45
10
0.07
0.12
1
36
BZG03C51
48
51
54
25
60
10
0.07
0.12
1
39
BZG03C56
52
56
60
25
60
10
0.07
0.12
1
43
BZG03C62
58
62
66
25
80
10
0.08
0.13
1
47
BZG03C68
64
68
72
25
80
10
0.08
0.13
1
51
BZG03C75
70
75
79
30
100
10
0.08
0.13
1
56
BZG03C82
77
82
87
30
100
10
0.08
0.13
1
62
BZG03C91
85
91
96
60
200
5
0.09
0.13
1
68
BZG03C100
94
100
106
60
200
5
0.09
0.13
1
75
BZG03C110
104
110
116
80
250
5
0.09
0.13
1
82
BZG03C120
114
120
127
80
250
5
0.09
0.13
1
91
BZG03C130
124
130
141
110
300
5
0.09
0.13
1
100
BZG03C150
138
150
156
130
300
5
0.09
0.13
1
110
BZG03C160
158
160
171
150
350
5
0.09
0.13
1
120
BZG03C180
168
180
191
180
400
5
0.09
0.13
1
130
BZG03C200
188
200
212
200
500
5
0.09
0.13
1
150
BZG03C220
208
220
233
350
750
2
0.09
0.13
1
160
BZG03C240
228
240
256
400
850
2
0.09
0.13
1
180
BZG03C270
251
270
289
450
1000
2
0.09
0.13
1
200
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typ
Test
Current
Document Number 85593
Rev. 1.7, 15-Sep-05
BZG03C-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
a)
b)
3.0
2.0
I F – Forward Current (A )
5.0
2.0
1.5
10.0
2.5
2.0
1.5
1.0
0.5
1.0
25.0
0
0
25.0
94 9313
Figure 1. Boards for RthJA definition (copper overlay 35µ)
PZSM – Non-Repetitive Surge Power
Dissipation (W)
Ptot –Total PowerDissipation(W )
3
RthJA=25K/W
2
RthJA=100K/W
1
80
120
160
100
10
0.01
0.1
1
10
100
tp – Pulse Length ( ms )
94 9582
Figure 2. Total Power Dissipation vs. Ambient Temperature
Z thp–Thermal Resistance for Pulse Cond.(K/W
2.0
1000
200
Tamb – Ambient Temperature(°C )
94 9580
1.5
10000
0
40
1.0
Figure 3. Forward Current vs. Forward Voltage
4
0
0.5
V F – Forward Voltage ( V )
94 9581
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
1000
100
tp/T=0.5
tp/T=0.2
10
tp/T=0.1
tp/T=0.05
tp/T=0.02
1
10–5
tp/T=0.01
10–4
94 9583
10–3
10–2
10–1
100
101
102
tp – Pulse Length ( s )
Figure 5. Thermal Response
Document Number 85593
Rev. 1.7, 15-Sep-05
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BZG03C-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
19628
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Document Number 85593
Rev. 1.7, 15-Sep-05
BZG03C-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85593
Rev. 1.7, 15-Sep-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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