VISHAY BZT03C220

BZT03..Series
VISHAY
Vishay Semiconductors
Silicon Zener-Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
949539
Case:SOD57
Weight: 370 mg (max.500 mg)
Packaging Codes/Options:
TAP / 5 K Ammopack (52 mm tape) / 25 K/box
TR / 5 K 10" reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
Symbol
Value
Unit
PV
3.25
W
l = 10 mm, TL = 25 °C
PV
1.3
W
Repetitive peak reverse power
dissipation
Tamb = 25 °C
PZRM
10
W
Non repetitive peak surge power tp = 100 µs, Tj = 25 °C
dissipation
PZSM
600
W
Tj
175
°C
Tstg
- 65 to + 175
°C
Junction temperature
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Symbol
Value
Unit
l = 10 mm, TL = constant
Test condition
RthJA
46
K/W
on PC board with spacing 25 mm
RthJA
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85599
Rev. 4, 10-Sep-03
Test condition
IF = 0.5 A
Symbol
VF
Min
Typ.
Max
Unit
1.2
V
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1
BZT03..Series
VISHAY
Vishay Semiconductors
Electrical Characteristics
BZT03C...
Partnumber
Zener Voltage Range
Dynamic
Resistance
Test
Curre
nt
Temperature
Coefficient of
Zener Voltage
Reverse
Leakage
Current
Clamping
Stand-off
VZ @ IZT
rzj and TKVZ @
IZ
IZT
TCVZ @ IZT
IR @ VR
V(CL)R1) @
IRMS
[email protected] VR 2)
Ω
mA
V
min
typ
max
typ
max
BZT03C6V2
5.8
6.2
6.6
1
2
BZT03C6V8
6.4
6.8
7.2
1
2
BZT03C7V5
7
7.5
7.9
1
BZT03C8V2
7.7
8.2
8.7
BZT03C9V1
8.5
9.1
BZT03C10
9.4
BZT03C11
V
V
A
V
max
100
0
0.07
1500
4.7
9.3
34.0
3000
5.1
100
0
0.07
1000
5.1
10.2
31.0
2000
5.6
2
100
0
0.07
750
5.6
11.3
26.5
1500
6.2
1
2
100
0.03
0.08
600
6.2
12.3
24.4
1200
6.8
9.6
2
4
50
0.03
0.08
20
6.8
13.3
22.7
50
7.5
10
10.6
2
4
50
0.05
0.09
10
7.5
14.8
20.3
20
8.2
10.4
11
11.6
4
7
50
0.05
0.1
4
8.2
15.7
19.1
5
9.1
BZT03C12
11.4
12
12.7
4
7
50
0.05
0.1
3
9.1
17.0
17.7
5
10
BZT03C13
12.4
13
14.1
5
10
50
0.05
0.1
2
10
18.9
15.9
5
11
BZT03C15
13.8
15
15.6
5
10
50
0.05
0.1
1
11
20.9
14.4
5
12
BZT03C16
15.3
16
17.1
6
15
25
0.06
0.11
1
12
22.9
13.1
5
13
BZT03C18
16.8
18
19.1
6
15
25
0.06
0.11
1
13
25.6
11.7
5
15
BZT03C20
18.8
20
21.2
6
15
25
0.06
0.11
1
15
28.4
10.6
5
16
BZT03C22
20.8
22
23.3
6
15
25
0.06
0.11
1
16
31.0
9.7
5
18
BZT03C24
22.8
24
25.6
7
15
25
0.06
0.11
1
18
33.8
8.9
5
20
BZT03C27
25.1
27
28.9
7
15
25
0.06
0.11
1
20
38.1
7.9
5
22
BZT03C30
28
30
32
8
15
25
0.06
0.11
1
22
42.2
7.1
5
24
BZT03C33
31
33
35
8
15
25
0.06
0.11
1
24
46.2
6.5
5
27
BZT03C36
34
36
38
21
40
10
0.06
0.11
1
27
50.1
6.0
5
30
BZT03C39
37
39
41
21
40
10
0.06
0.11
1
30
54.1
5.5
5
33
BZT03C43
40
43
46
24
45
10
0.07
0.12
1
33
60.7
4.9
5
36
BZT03C47
44
47
50
24
45
10
0.07
0.12
1
36
65.5
4.6
5
39
BZT03C51
48
51
54
25
60
10
0.07
0.12
1
39
70.8
4.2
5
43
BZT03C56
52
56
60
25
60
10
0.07
0.12
1
43
78.6
3.8
5
47
BZT03C62
58
62
66
25
80
10
0.08
0.13
1
47
86.5
3.5
5
51
BZT03C68
64
68
72
25
80
10
0.08
0.13
1
51
94.4
3.2
5
56
BZT03C75
70
75
79
30
100
10
0.08
0.13
1
56
103.5
2.9
5
62
BZT03C82
77
82
87
30
100
10
0.08
0.13
1
62
114
2.6
5
68
BZT03C91
85
91
96
60
200
5
0.09
0.13
1
68
126
2.4
5
75
BZT03C100
94
100
106
60
200
5
0.09
0.13
1
75
139
2.2
5
82
BZT03C110
104
110
116
80
250
5
0.09
0.13
1
82
152
2.0
5
91
BZT03C120
114
120
127
80
250
5
0.09
0.13
1
91
167
1.8
5
100
BZT03C130
124
130
141
110
300
5
0.09
0.13
1
100
185
1.6
5
110
BZT03C150
138
150
156
130
300
5
0.09
0.13
1
110
204
1.5
5
120
BZT03C160
153
160
171
150
350
5
0.09
0.13
1
120
224
1.3
5
130
BZT03C180
168
180
191
180
400
5
0.09
0.13
1
130
249
1.2
5
150
BZT03C200
188
200
212
200
500
5
0.09
0.13
1
150
276
1.1
5
160
BZT03C220
208
220
233
350
750
2
0.09
0.13
1
160
305
1.0
5
180
BZT03C240
228
240
256
400
850
2
0.09
0.13
1
180
336
0.9
5
200
BZT03C270
251
270
289
450
1000
2
0.09
0.13
1
200
380
0.8
5
220
10/1000 exp. falling pulse tp = 1000 µs down to 50 %
2)
Stand-off voltage = recommended suplly voltage
www.vishay.com
max
µA
max
1)
2
µA
%/K
min
max
Document Number 85599
Rev. 4, 10-Sep-03
BZT03..Series
VISHAY
Vishay Semiconductors
Electrical Characteristics
BZT03D...
Partnumber
Zener Voltage Range
Dynamic
Resistance
Test
Curre
nt
Temperature
Coefficient of
Zener Voltage
Reverse
Leakage
Current
Clamping
Stand-off
VZ @ IZT
rzj and TKVZ @
IZ
IZT
TCVZ @ IZT
IR @ V R
V(CL)R1) @
IRMS
[email protected] VR 2)
Ω
mA
V
min
typ
max
typ
max
BZT03D6V2
5.6
6.2
6.8
1
2
BZT03D6V8
6.1
6.8
7.5
1
2
BZT03D7V5
6.75
7.5
8.25
1
BZT03D8V2
7.4
8.2
9
BZT03D9V1
8.2
9.1
BZT03D10
9
BZT03D11
µA
%/K
V
V
A
V
max
max
100
0
0.07
1500
4.4
9.5
34.0
3000
4.8
100
0
0.07
1000
4.8
10.5
31.0
2000
5.3
2
100
0
0.07
750
5.3
11.6
26.5
1500
5.9
1
2
100
0.03
0.08
600
5.9
12.6
24.4
1200
6.5
10
2
4
50
0.03
0.08
20
6.5
13.7
22.7
50
7.1
10
11
2
4
50
0.05
0.09
10
7.1
15.2
20.3
20
7.9
9.9
11
12.1
4
7
50
0.05
0.1
4
7.9
16.2
19.1
5
8.6
BZT03D12
10.8
12
13.2
4
7
50
0.05
0.1
3
8.6
17.5
17.7
5
9.3
BZT03D13
11.7
13
14.3
5
10
50
0.05
0.1
2
9.3
19.1
15.9
5
10.6
BZT03D15
13.5
15
16.5
5
10
50
0.05
0.1
1
10.6
21.8
14.4
5
11.6
BZT03D16
14.4
16
17.6
6
15
25
0.06
0.11
1
11.6
23.4
13.1
5
12.6
BZT03D18
16.2
18
19.8
6
15
25
0.06
0.11
1
12.6
26.3
11.7
5
14.4
BZT03D20
18
20
22
6
15
25
0.06
0.11
1
14.4
29.2
10.6
5
15.8
BZT03D22
29.8
22
24.2
6
15
25
0.06
0.11
1
15.8
31.9
9.7
5
17.2
BZT03D24
21.6
24
26.4
7
15
25
0.06
0.11
1
17.2
34.6
8.9
5
19.4
BZT03D27
24.3
27
29.7
7
15
25
0.06
0.11
1
19.4
39
7.9
5
21.5
BZT03D30
27
30
33
8
15
25
0.06
0.11
1
21.5
43.5
7.1
5
23.5
BZT03D33
29.7
33
36.3
8
15
25
0.06
0.11
1
23.5
47.5
6.5
5
25.8
BZT03D36
32.4
36
39.6
21
40
10
0.06
0.11
1
25.8
51.5
6.0
5
28
BZT03D39
35.1
39
42.9
21
40
10
0.06
0.11
1
28
56
5.5
5
31
BZT03D43
38.7
43
47.3
24
45
10
0.07
0.12
1
31
62
4.9
5
33.5
BZT03D47
42.3
47
51.7
24
45
10
0.07
0.12
1
33.5
67.5
4.6
5
36.5
BZT03D51
45.9
51
56.1
25
60
10
0.07
0.12
1
36.5
73
4.2
5
40
BZT03D56
50.4
56
61.6
25
60
10
0.07
0.12
1
40
81
3.8
5
44.5
BZT03D62
55.8
62
68.2
25
80
10
0.08
0.13
1
44.5
89
3.5
5
49
BZT03D68
61.2
68
74.8
25
80
10
0.08
0.13
1
49
97
3.2
5
54
BZT03D75
67.5
75
82.5
30
100
10
0.08
0.13
1
54
107
2.9
5
59
BZT03D82
73.8
82
90.2
30
100
10
0.08
0.13
1
59
117
2.6
5
65
BZT03D91
81.9
91
100
60
200
5
0.09
0.13
1
65
130
2.4
5
71
BZT03D100
90
100
110
60
200
5
0.09
0.13
1
71
143
2.2
5
79
BZT03D110
99
110
121
80
250
5
0.09
0.13
1
79
157
2.0
5
86
BZT03D120
108
120
132
80
250
5
0.09
0.13
1
86
172
1.8
5
93
BZT03D130
117
130
143
110
300
5
0.09
0.13
1
93
187
1.6
5
106
BZT03D150
135
150
165
130
300
5
0.09
0.13
1
106
213
1.5
5
116
BZT03D160
144
160
176
150
350
5
0.09
0.13
1
116
229
1.3
5
126
BZT03D180
162
180
198
180
400
5
0.09
0.13
1
126
256
1.2
5
144
BZT03D200
180
200
220
200
500
5
0.09
0.13
1
144
284
1.1
5
158
BZT03D220
198
220
242
350
750
2
0.09
0.13
1
158
314
1.0
5
172
BZT03D240
216
240
264
400
850
2
0.09
0.13
1
172
364
0.9
5
194
BZT03D270
243
270
297
450
1000
2
0.09
0.13
1
194
388
0.8
5
215
1)
10/1000 exp. falling pulse tp = 1000 µs down to 50 %
2)
Stand-off voltage = recommended suplly voltage
Document Number 85599
Rev. 4, 10-Sep-03
max
µA
min
max
www.vishay.com
3
BZT03..Series
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
3.0
3
25
2.5
I F– Forward Current (A )
50
50
2.0
Tj =25°C
1.5
1.0
0.5
0
2
7
0
94 9086a
4
l
l=10mm
3
l
15mm
TL=constant
2
20mm
1
see Fig.1
94 9584
40
80
120
160
Tj =25°C
1000
100
10
0.01
200
Tamb – Ambient Temperature ( °C )
0.1
1
100
10
tp – Pulse Length ( ms )
94 9586
Figure 2. Total Power Dissipation vs. Ambient Temperature
2.0
1.5
10000
0
0
1.0
Figure 3. Forward Current vs. Forward Voltage
PZSM – Non-Repetitive Surge Power
Dissipation (W )
Ptot –Total Power Dissipation ( W )
Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm,
RthJA≤100 K/W
0.5
V F – Forward Voltage ( V )
94 9585
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
Package Dimensions in mm
3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5g
26 min.
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4
Cathode Identification
4.2 max.
94 9538
technicaldrawings
according to DIN
specifications
0.82 max.
26 min.
Document Number 85599
Rev. 4, 10-Sep-03
BZT03..Series
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85599
Rev. 4, 10-Sep-03
www.vishay.com
5