BZT03..Series VISHAY Vishay Semiconductors Silicon Zener-Diodes with Surge Current Specification Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits Mechanical Data 949539 Case:SOD57 Weight: 370 mg (max.500 mg) Packaging Codes/Options: TAP / 5 K Ammopack (52 mm tape) / 25 K/box TR / 5 K 10" reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Power dissipation Symbol Value Unit PV 3.25 W l = 10 mm, TL = 25 °C PV 1.3 W Repetitive peak reverse power dissipation Tamb = 25 °C PZRM 10 W Non repetitive peak surge power tp = 100 µs, Tj = 25 °C dissipation PZSM 600 W Tj 175 °C Tstg - 65 to + 175 °C Junction temperature Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Symbol Value Unit l = 10 mm, TL = constant Test condition RthJA 46 K/W on PC board with spacing 25 mm RthJA 100 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85599 Rev. 4, 10-Sep-03 Test condition IF = 0.5 A Symbol VF Min Typ. Max Unit 1.2 V www.vishay.com 1 BZT03..Series VISHAY Vishay Semiconductors Electrical Characteristics BZT03C... Partnumber Zener Voltage Range Dynamic Resistance Test Curre nt Temperature Coefficient of Zener Voltage Reverse Leakage Current Clamping Stand-off VZ @ IZT rzj and TKVZ @ IZ IZT TCVZ @ IZT IR @ VR V(CL)R1) @ IRMS IR@ VR 2) Ω mA V min typ max typ max BZT03C6V2 5.8 6.2 6.6 1 2 BZT03C6V8 6.4 6.8 7.2 1 2 BZT03C7V5 7 7.5 7.9 1 BZT03C8V2 7.7 8.2 8.7 BZT03C9V1 8.5 9.1 BZT03C10 9.4 BZT03C11 V V A V max 100 0 0.07 1500 4.7 9.3 34.0 3000 5.1 100 0 0.07 1000 5.1 10.2 31.0 2000 5.6 2 100 0 0.07 750 5.6 11.3 26.5 1500 6.2 1 2 100 0.03 0.08 600 6.2 12.3 24.4 1200 6.8 9.6 2 4 50 0.03 0.08 20 6.8 13.3 22.7 50 7.5 10 10.6 2 4 50 0.05 0.09 10 7.5 14.8 20.3 20 8.2 10.4 11 11.6 4 7 50 0.05 0.1 4 8.2 15.7 19.1 5 9.1 BZT03C12 11.4 12 12.7 4 7 50 0.05 0.1 3 9.1 17.0 17.7 5 10 BZT03C13 12.4 13 14.1 5 10 50 0.05 0.1 2 10 18.9 15.9 5 11 BZT03C15 13.8 15 15.6 5 10 50 0.05 0.1 1 11 20.9 14.4 5 12 BZT03C16 15.3 16 17.1 6 15 25 0.06 0.11 1 12 22.9 13.1 5 13 BZT03C18 16.8 18 19.1 6 15 25 0.06 0.11 1 13 25.6 11.7 5 15 BZT03C20 18.8 20 21.2 6 15 25 0.06 0.11 1 15 28.4 10.6 5 16 BZT03C22 20.8 22 23.3 6 15 25 0.06 0.11 1 16 31.0 9.7 5 18 BZT03C24 22.8 24 25.6 7 15 25 0.06 0.11 1 18 33.8 8.9 5 20 BZT03C27 25.1 27 28.9 7 15 25 0.06 0.11 1 20 38.1 7.9 5 22 BZT03C30 28 30 32 8 15 25 0.06 0.11 1 22 42.2 7.1 5 24 BZT03C33 31 33 35 8 15 25 0.06 0.11 1 24 46.2 6.5 5 27 BZT03C36 34 36 38 21 40 10 0.06 0.11 1 27 50.1 6.0 5 30 BZT03C39 37 39 41 21 40 10 0.06 0.11 1 30 54.1 5.5 5 33 BZT03C43 40 43 46 24 45 10 0.07 0.12 1 33 60.7 4.9 5 36 BZT03C47 44 47 50 24 45 10 0.07 0.12 1 36 65.5 4.6 5 39 BZT03C51 48 51 54 25 60 10 0.07 0.12 1 39 70.8 4.2 5 43 BZT03C56 52 56 60 25 60 10 0.07 0.12 1 43 78.6 3.8 5 47 BZT03C62 58 62 66 25 80 10 0.08 0.13 1 47 86.5 3.5 5 51 BZT03C68 64 68 72 25 80 10 0.08 0.13 1 51 94.4 3.2 5 56 BZT03C75 70 75 79 30 100 10 0.08 0.13 1 56 103.5 2.9 5 62 BZT03C82 77 82 87 30 100 10 0.08 0.13 1 62 114 2.6 5 68 BZT03C91 85 91 96 60 200 5 0.09 0.13 1 68 126 2.4 5 75 BZT03C100 94 100 106 60 200 5 0.09 0.13 1 75 139 2.2 5 82 BZT03C110 104 110 116 80 250 5 0.09 0.13 1 82 152 2.0 5 91 BZT03C120 114 120 127 80 250 5 0.09 0.13 1 91 167 1.8 5 100 BZT03C130 124 130 141 110 300 5 0.09 0.13 1 100 185 1.6 5 110 BZT03C150 138 150 156 130 300 5 0.09 0.13 1 110 204 1.5 5 120 BZT03C160 153 160 171 150 350 5 0.09 0.13 1 120 224 1.3 5 130 BZT03C180 168 180 191 180 400 5 0.09 0.13 1 130 249 1.2 5 150 BZT03C200 188 200 212 200 500 5 0.09 0.13 1 150 276 1.1 5 160 BZT03C220 208 220 233 350 750 2 0.09 0.13 1 160 305 1.0 5 180 BZT03C240 228 240 256 400 850 2 0.09 0.13 1 180 336 0.9 5 200 BZT03C270 251 270 289 450 1000 2 0.09 0.13 1 200 380 0.8 5 220 10/1000 exp. falling pulse tp = 1000 µs down to 50 % 2) Stand-off voltage = recommended suplly voltage www.vishay.com max µA max 1) 2 µA %/K min max Document Number 85599 Rev. 4, 10-Sep-03 BZT03..Series VISHAY Vishay Semiconductors Electrical Characteristics BZT03D... Partnumber Zener Voltage Range Dynamic Resistance Test Curre nt Temperature Coefficient of Zener Voltage Reverse Leakage Current Clamping Stand-off VZ @ IZT rzj and TKVZ @ IZ IZT TCVZ @ IZT IR @ V R V(CL)R1) @ IRMS IR@ VR 2) Ω mA V min typ max typ max BZT03D6V2 5.6 6.2 6.8 1 2 BZT03D6V8 6.1 6.8 7.5 1 2 BZT03D7V5 6.75 7.5 8.25 1 BZT03D8V2 7.4 8.2 9 BZT03D9V1 8.2 9.1 BZT03D10 9 BZT03D11 µA %/K V V A V max max 100 0 0.07 1500 4.4 9.5 34.0 3000 4.8 100 0 0.07 1000 4.8 10.5 31.0 2000 5.3 2 100 0 0.07 750 5.3 11.6 26.5 1500 5.9 1 2 100 0.03 0.08 600 5.9 12.6 24.4 1200 6.5 10 2 4 50 0.03 0.08 20 6.5 13.7 22.7 50 7.1 10 11 2 4 50 0.05 0.09 10 7.1 15.2 20.3 20 7.9 9.9 11 12.1 4 7 50 0.05 0.1 4 7.9 16.2 19.1 5 8.6 BZT03D12 10.8 12 13.2 4 7 50 0.05 0.1 3 8.6 17.5 17.7 5 9.3 BZT03D13 11.7 13 14.3 5 10 50 0.05 0.1 2 9.3 19.1 15.9 5 10.6 BZT03D15 13.5 15 16.5 5 10 50 0.05 0.1 1 10.6 21.8 14.4 5 11.6 BZT03D16 14.4 16 17.6 6 15 25 0.06 0.11 1 11.6 23.4 13.1 5 12.6 BZT03D18 16.2 18 19.8 6 15 25 0.06 0.11 1 12.6 26.3 11.7 5 14.4 BZT03D20 18 20 22 6 15 25 0.06 0.11 1 14.4 29.2 10.6 5 15.8 BZT03D22 29.8 22 24.2 6 15 25 0.06 0.11 1 15.8 31.9 9.7 5 17.2 BZT03D24 21.6 24 26.4 7 15 25 0.06 0.11 1 17.2 34.6 8.9 5 19.4 BZT03D27 24.3 27 29.7 7 15 25 0.06 0.11 1 19.4 39 7.9 5 21.5 BZT03D30 27 30 33 8 15 25 0.06 0.11 1 21.5 43.5 7.1 5 23.5 BZT03D33 29.7 33 36.3 8 15 25 0.06 0.11 1 23.5 47.5 6.5 5 25.8 BZT03D36 32.4 36 39.6 21 40 10 0.06 0.11 1 25.8 51.5 6.0 5 28 BZT03D39 35.1 39 42.9 21 40 10 0.06 0.11 1 28 56 5.5 5 31 BZT03D43 38.7 43 47.3 24 45 10 0.07 0.12 1 31 62 4.9 5 33.5 BZT03D47 42.3 47 51.7 24 45 10 0.07 0.12 1 33.5 67.5 4.6 5 36.5 BZT03D51 45.9 51 56.1 25 60 10 0.07 0.12 1 36.5 73 4.2 5 40 BZT03D56 50.4 56 61.6 25 60 10 0.07 0.12 1 40 81 3.8 5 44.5 BZT03D62 55.8 62 68.2 25 80 10 0.08 0.13 1 44.5 89 3.5 5 49 BZT03D68 61.2 68 74.8 25 80 10 0.08 0.13 1 49 97 3.2 5 54 BZT03D75 67.5 75 82.5 30 100 10 0.08 0.13 1 54 107 2.9 5 59 BZT03D82 73.8 82 90.2 30 100 10 0.08 0.13 1 59 117 2.6 5 65 BZT03D91 81.9 91 100 60 200 5 0.09 0.13 1 65 130 2.4 5 71 BZT03D100 90 100 110 60 200 5 0.09 0.13 1 71 143 2.2 5 79 BZT03D110 99 110 121 80 250 5 0.09 0.13 1 79 157 2.0 5 86 BZT03D120 108 120 132 80 250 5 0.09 0.13 1 86 172 1.8 5 93 BZT03D130 117 130 143 110 300 5 0.09 0.13 1 93 187 1.6 5 106 BZT03D150 135 150 165 130 300 5 0.09 0.13 1 106 213 1.5 5 116 BZT03D160 144 160 176 150 350 5 0.09 0.13 1 116 229 1.3 5 126 BZT03D180 162 180 198 180 400 5 0.09 0.13 1 126 256 1.2 5 144 BZT03D200 180 200 220 200 500 5 0.09 0.13 1 144 284 1.1 5 158 BZT03D220 198 220 242 350 750 2 0.09 0.13 1 158 314 1.0 5 172 BZT03D240 216 240 264 400 850 2 0.09 0.13 1 172 364 0.9 5 194 BZT03D270 243 270 297 450 1000 2 0.09 0.13 1 194 388 0.8 5 215 1) 10/1000 exp. falling pulse tp = 1000 µs down to 50 % 2) Stand-off voltage = recommended suplly voltage Document Number 85599 Rev. 4, 10-Sep-03 max µA min max www.vishay.com 3 BZT03..Series VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 3.0 3 25 2.5 I F– Forward Current (A ) 50 50 2.0 Tj =25°C 1.5 1.0 0.5 0 2 7 0 94 9086a 4 l l=10mm 3 l 15mm TL=constant 2 20mm 1 see Fig.1 94 9584 40 80 120 160 Tj =25°C 1000 100 10 0.01 200 Tamb – Ambient Temperature ( °C ) 0.1 1 100 10 tp – Pulse Length ( ms ) 94 9586 Figure 2. Total Power Dissipation vs. Ambient Temperature 2.0 1.5 10000 0 0 1.0 Figure 3. Forward Current vs. Forward Voltage PZSM – Non-Repetitive Surge Power Dissipation (W ) Ptot –Total Power Dissipation ( W ) Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, RthJA≤100 K/W 0.5 V F – Forward Voltage ( V ) 94 9585 Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse Length Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g 26 min. www.vishay.com 4 Cathode Identification 4.2 max. 94 9538 technicaldrawings according to DIN specifications 0.82 max. 26 min. Document Number 85599 Rev. 4, 10-Sep-03 BZT03..Series VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85599 Rev. 4, 10-Sep-03 www.vishay.com 5