POWERSEM PSBH50

Single Phase
Half Controlled Bridges
PSBH 50
IdAV
VRRM
= 53 A
= 400-1600 V
Preliminary Data Sheet
VRSM
VDSM
500
900
1300
1500
*1700
VRRM
VDRM
400
800
1200
1400
*1600
Type
PSBH 50/04
PSBH 50/08
PSBH 50/12
PSBH 50/14
PSBH 50/16
~
~
* Delivery on request
Symbol
Test Conditions
IdAV
ITSM, IFSM
TC = 85 °C
TVJ = 45°C
VR = 0
180° sine, per module
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
53
550
600
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
550
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1520
1520
A2 s
A2 s
1250
1250
2
A s
A2 s
150
A/µs
2
∫ i dt
TVJ = TVJM
VR = 0
(di/dt)cr
Maximum Ratings
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TJVM
repetitive, IT = 50 A
f = 50Hz, tP = 200µs
VD = 2/3 VDRM
.
IG = 0.3 A
non repetitive, IT = ½ IdAV
diG/dt = 0.3 A/µs
(dv/dt)cr
PGM
PGAVM
VRGM
TVJ
TVJM
Tstg
VISOL
Md
Weight
TVJ = TVJM
VDR = 2/3 VDRM
RGK = ∞, method 1 (linear voltage rise)
TVJ = TVJM
IT = ITAVM
50/60 HZ, RMS
IISOL ≤ 1 mA
≤
≤
tP = 30µs
tP = 500µs
t = 1 min
t=1s
Mounting torque
typ.
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
(M5)
500
A/µs
1000
V/µs
10
5
0.5
W
W
W
10
-40 ... + 125
125
-40 ... + 125
V
°C
°C
°C
2500
3000
V∼
V∼
2 - 2.5
100
Nm
g
Features
• Package with fast-on terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Low forward voltage drop
• UL registered E 148688
Applications
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Motor control
• Power converter
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• High power density
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
PSBH 50
Symbol
Test Conditions
ID, IR
VT, VF
VTO
rT
VGT
TVJ = TVJM, VR = VRRM, VD = VDRM
≤
IT, IF = 80A, TVJ = 25°C
≤
For power-loss calculations only (TVJ = TVJM)
Characteristic Value
5
1.64
0.85
11
mA
V
V
mΩ
VD = 6V
TVJ = 25°C
TVJ = -40°C
≤
≤
1.5
1.6
V
V
IGT
VD = 6V
TVJ = 25°C
TVJ = -40°C
≤
≤
100
200
mA
mA
VGD
IGD
IL
TVJ = TVJM
TVJ = TVJM
VD = 2/3 VDRM
VD = 2/3 VDRM
≤
≤
0.2
5
V
mA
≤
450
mA
IH
tgd
TVJ = 25°C, VD = 6V, RGK = ∞
TVJ = 25°C, VD = ½ VDRM
IG = 0.45A, diG/dt = 0.45A/µs
≤
200
mA
≤
2
µs
tq
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
250
µs
RthJC
per thyristor/Diode; DC
per module
0.9
0.225
K/W
K/W
RthJK
per thyristor/Diode; DC
per module
1.1
0.275
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
16.1
7.1
50
mm
mm
m/s2
TVJ = 25°C, tP = 10µs
IG = 0.45A, diG/dt = 0.45A/µs
200
[A]
150
1:T
VJ
T
= 25°C
VJ
IF(OV)
-----IFSM
=25°C
us
2:T VJ = 125°C
1.6
100
100
1
IFSM (A)
TVJ=45°C
TVJ=150°C
550
490
1.4
1.2
tgd
2
1
10
0 VRRM
50
0.8
1/2 VRRM
0.6
IF
0
0.5
1
V
1.5
2
[V]
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
0.4
1
10
100
I [mA]
G
1 VRRM
1000
Fig. 2 Gate trigger delay time
0
10
1
2
10 t[ms] 10
3
10
Fig. 3 Surge overload current
per diode (or thyristor) IFSM,
ITSM: Crest value t: duration
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
PSBH 50
10
70
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10W
V
DC
sin.180°
[A]
60
rec.120°
rec.60°
rec.30°
50
40
6
1
30
5
4
VG
20
3
2
10
ITAV
1
0
50
0.1
10 0
10 1
10 2
IG
10 3
10 4
mA
Fig.4 Gate trigger characteristic
100
150
200
TC (°C)
Fig.5 Maximum forward current
at case temperature
K/W
1.2
Z
1
thJK
Z thJC
0.8
0.6
0.4
0.2
Z th
0.01
0.1
1
t[s]
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
200
[W]
80
PSBH 50
TC
0.28 0.15
175
= RTHCA [K/W]
85
0.4
90
150
95
125
0.61
100
100
105
1.02
75
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
25
PVTOT
0
110
115
2.27
120
°C
125
10
ITAVM
30
0
50
[A]
Tamb
50
100
[K]
150
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions