POWERSEM PSCT85

Single Phase
Full Controlled Bridges
with freewheeling diode
PSCT 85
IdAV
VRRM
= 82 A
= 400-1600 V
Preliminary Data Sheet
VRSM
VDSM
500
900
1300
1500
*1700
VRRM
VDRM
400
800
1200
1400
*1600
Type
PSCT 85/04
PSCT 85/08
PSCT 85/12
PSCT 85/14
PSCT 85/16
~
~
* Delivery on request
Symbol
Test Conditions
IdAV
ITSM
TC = 85 °C
TVJ = 45°C
VR = 0
per module
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
82
1150
1230
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1070
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
6600
6280
A2 s
A2 s
5000
4750
2
A s
A2 s
150
A/µs
2
∫ i dt
TVJ = TVJM
VR = 0
(di/dt)cr
Maximum Ratings
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TJVM
repetitive, IT = 50 A
f = 400Hz, tP = 200µs
VD = 2/3 VDRM
.
500
A/µs
TVJ = TVJM
VDR = 2/3 VDRM
RGK = ∞, method 1 (linear voltage rise)
1000
V/µs
non repetitive, IT = 1/3 IdAV
IG = 0.3 A
diG/dt = 0.3 A/µs
(dv/dt)cr
PGM
PGAVM
VRGM
TVJ
TVJM
Tstg
VISOL
Md
Weight
TVJ = TVJM
IT = ITAVM
50/60 HZ, RMS
IISOL ≤ 1 mA
≤
≤
tP = 30µs
tP = 500µs
t = 1 min
t=1s
Mounting torque
Terminal connection torque
typ.
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
(M6)
(M6)
10
5
0.5
W
W
W
10
-40 ... + 125
125
-40 ... + 125
V
°C
°C
°C
2500
3000
V∼
V∼
5
5
270
Nm
Nm
g
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Low forward voltage drop
• UL released, E 148688
Applications
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Motor control
• Power converter
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• High power density
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSCT 85
Symbol
Test Conditions
ID, IR
VT
VTO
rT
VGT
TVJ = TVJM, VR = VRRM, VD = VDRM
≤
IT = 200A, TVJ = 25°C
≤
For power-loss calculations only (TVJ = TVJM)
Characteristic Value
5
1.75
0.85
6
mA
V
V
mΩ
VD = 6V
TVJ = 25°C
TVJ = -40°C
≤
≤
1.5
1.6
V
V
IGT
VD = 6V
TVJ = 25°C
TVJ = -40°C
≤
≤
100
200
mA
mA
VGD
IGD
IL
TVJ = TVJM
TVJ = TVJM
VD = 2/3 VDRM
VD = 2/3 VDRM
≤
≤
0.2
5
V
mA
≤
450
mA
IH
tgd
TVJ = 25°C, VD = 6V, RGK = ∞
TVJ = 25°C, VD = ½ VDRM
IG = 0.3A, diG/dt = 0.3A/µs
≤
200
mA
≤
2
µs
tq
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
150
µs
RthJC
per thyristor; sine 180°el
per module
0.65
0.13
K/W
K/W
RthJK
per thyristor; sine 180° el
per module
0.8
0.16
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10.0
9.4
50
mm
mm
m/s2
TVJ = 25°C, tP = 30µs
IG = 0.3A, diG/dt = 0.3A/µs
300
1:T VJ= 125°C
[A]
250 2:TVJ = 25°C
T
VJ
I
T(OV)
-----ITSM
=25°C
ITSM (A)
TVJ=45°C
us
1.6
200
100
150
TVJ=150°C
1150
1000
1.4
1.2
tgd
1
100
10
0 VRRM
0.8
1/2 VRRM
50
IF
0.6
1
0
0.5
1
V F [V]
1 VRRM
2
1.5
2
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
1
10
100
I [mA]
G
0.4
1000
Fig. 2 Gate trigger delay time
10
0
10
1
t[ms]
10
2
10
3
Fig. 3 Surge overload current
per diode (or thyristor) IFSM,
ITSM: Crest value t: duration
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSCT 85
10
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10W
V
100
DC
[A]
sin.180°
rec.120°
80
rec.60°
rec.30°
60
6
1
40
5
4
VG
20
3
2
ITAV
1
0.1
10 0
10 1
0
50
10 2
IG
10 3
10 4
mA
Fig.4 Gate trigger characteristic
100
150
200
T (°C)
C
Fig.5 Maximum forward current
at case temperature
1
K/W
Z thJK
0.8
Z thJC
0.6
0.4
0.2
Z th
0.01
0.1
t[s]
1
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
300
[W]
75
TC
PSCT 85
0.17 0.09 = RTHCA [K/W]
250
80
85
0.25
90
200
95
0.39
100
150
105
0.67
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
PVTOT
0
110
1.5
115
120
°C
125
20
ITAVM
40
60
80 0
[A]
Tamb
50
100
[K]
150
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions