Single Phase Half Controlled Bridges with freewheeling diode PSCH 50 IdAV VRRM = 53A = 400-1600 V Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSCH 50/04 PSCH 50/08 PSCH 50/12 PSCH 50/14 PSCH 50/16 ~ ~ * Delivery on request Symbol Test Conditions IdAV ITSM, IFSM TC = 85 °C 180° sine, per module TVJ = 45°C VR = 0 ∫ i2 dt 53 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A2 s A2 s 1250 1250 2 A s A2 s TVJ = TJVM repetitive, IT = 50 A f = 50Hz, tP = 200µs VD =2/3VDRM 150 A/µs IG = 0.3 A non repetitive, IT = ½ . IdAV diG/dt = 0.3 A/µs 500 A/µs 1000 V/µs TVJ = TVJM VR = 0 (di/dt)cr (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight Maximum Ratings t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 50/60 HZ, RMS IISOL ≤ 1 mA ≤ ≤ tP = 30µs tP = 500µs t = 1 min t=1s Mounting torque typ. POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 (M5) 10 5 0.5 W W W 10 V -40 ... + 125 125 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ 2 - 2.5 100 Nm g Features • Package with fast-on terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL registered E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“) 2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSCH 50 Symbol Test Conditions ID, IR VT, VF VTO rT VGT TVJ = TVJM, VR = VRRM, VD = VDRM IT, IF = 80 A, TVJ = 25°C Characteristic Value VD = 6V TVJ = 25°C TVJ = -40°C IGT VD = 6V VGD IGD IL TVJ = TVJM TVJ = TVJM IH tgd TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.45A, diG/dt = 0.45A/µs tq ≤ ≤ 5 1.64 mA V 0.85 11 V mΩ ≤ ≤ 1.5 1.6 V V TVJ = 25°C TVJ = -40°C ≤ ≤ 100 200 mA mA VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ 0.2 5 V mA ≤ 450 mA ≤ 200 mA ≤ 2 µs TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V di/dt = -10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM 250 µs RthJC per thyristor; sine 180°el per module 0.9 0.18 K/W K/W RthJK per thyristor; sine 180° el per module 1.1 0.22 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 16.1 7.1 50 mm mm m/s2 For power-loss calculations only (TVJ = TVJM) TVJ = 25°C, tP = 10µs IG = 0.45A, diG/dt = 0.45A/µs 200 [A] 150 1:T VJ T = 25°C VJ IF(OV) -----IFSM =25°C us 2:T VJ = 125°C 1.6 100 IFSM (A) TVJ=45°C TVJ=150°C 550 490 1.4 1 100 1.2 tgd 2 1 10 50 0 VRRM 0.8 1/2 VRRM IF 0.6 1 VRRM 0 0.5 1 1.5 2 VF [V] Fig. 1 Forward current vs. voltage drop per diode or thyristor POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 1 10 100 I [mA] G 0.4 1000 Fig. 2 Gate trigger delay time 0 10 1 2 10 t[ms] 10 3 10 Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration 2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSCH 50 70 10 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W V DC sin.180° [A] 60 rec.120° rec.60° rec.30° 50 40 6 1 30 5 20 4 VG 10 ITAV 3 2 1 0 50 0.1 10 0 10 1 10 2 IG 10 3 10 4 mA Fig.4 Gate trigger characteristic 100 150 200 TC (°C) Fig.5 Maximum forward current at case temperature K/W 1.2 Z 1 thJK Z thJC 0.8 0.6 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 200 [W] 175 80 PSCH 50 0.28 0.15 = RTHCA [K/W] TC 85 0.4 150 90 95 125 0.61 100 100 105 1.02 75 DC sin.180° rec.120° rec.60° rec.30° 50 25 PVTOT 0 10 ITAVM 30 50 0 [A] 110 115 2.27 120 °C 125 Tamb 50 100 [K] 150 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2002 POWERSEM reserves the right to change limits, test conditions and dimensions