MICROSEMI 2N2604

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
DEVICES
LEVELS
2N2604
2N2605
2N2604UB
2N2605UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N2604
2N2605
Unit
80
70
Vdc
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
30
mAdc
PT
400
mW/°C
TJ, Tstg
-65 to +200
°C
Collector Current
Total Power Dissipation @ TA = +25°C
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
TO-46 (TO-206AB)
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Ambient
UB
Max.
Unit
437
RθJA
°C/mW
275
Note:
1/ Consult 19500/354 for thermal curves
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Base Cutoff Current
VCB = 80V dc
2N2604, UB
VCB = 70V dc
2N2605, UB
VCB = 50V dc
2N2604, 2N2605, UB
VCB = 50V dc, TA = +150°C
2N2604, 2N2605, UB
Collector-Emitter Breakdown Current
IC = 10mAdc
Symbol
Min.
ICBO
10.0
10.0
10.0
5.0
uAdc
nAdc
uAdc
uAdc
60
Vdc
V(BR)CEO
Max.
Unit
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 5.0Vdc
IEBO
10.0
2.0
uAdc
ηAdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
ICES
10
ηAdc
T4-LDS-0092 Rev. 2 (101320)
UB Package
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS (2)
Forward-Current Transfer Ratio
IC = 10μAdc, VCE = 5.0Vdc
IC = 500μAdc, VCE = 5.0Vdc
Symbol
2N2604, UB
2N2605, UB
2N2604, UB
2N2605, UB
hFE
Min.
Max.
40
100
120
300
60
150
180
450
160
400
IC = 10mAdc, VCE = 5.0Vdc
2N2604, UB
2N2605, UB
40
100
IC = 10mAdc, VCE = 5.0Vdc, TA = -55°C
2N2604, UB
2N2605, UB
15
30
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 500μAdc
VCE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 500μAdc
VBE(sat)
Unit
0.3
Vdc
0.7
0.9
Vdc
Symbol
Min.
Max.
Unit
2N2604, UB
2N2605, UB
hie
1.0
2.0
10
20
kΩ
Small-Signal Open-Circuit Forward Current Output Admittance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
2N2604, UB
2N2605, UB
hoe
40
60
μmhos
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
2N2604, UB
2N2605, UB
hfe
60
150
180
450
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 0.5mAdc, VCE = 5.0Vdc, f = 30MHz
|hfe|
1.0
8.0
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Cobo
6.0
pF
F1
F2
F3
5.0
3.0
3.0
dB
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Input Impedance
IC = 1.0mAdc, VCB = 5.0Vdc, f = 1.0kHz
Noise Figure
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 100Hz
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 1.0kHz
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 10kHz
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
T4-LDS-0092 Rev. 2 (101320)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.065
.085
1.65
2.16
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500 1.750 12.70 44.45
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.040
1.02
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Note
5
6
6
6
6
6
4
3, 8
3, 8
9
5
NOTES:
1.
2.
3.
4.
5.
Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
Millimeters are given for general information only.
Symbol TL is measured from HD maximum.
Details of outline in this zone are optional.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by the gauge and gauging procedure.
6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
7. Lead number three is electrically connected to case.
8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
9. Symbol r applied to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions - (TO-46).
T4-LDS-0092 Rev. 2 (101320)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.056 1.17
1.42
.115
.128 2.92
3.25
.085
.108 2.16
2.74
.128
3.25
.108
2.74
.022
.038 0.56
0.97
.017
.035 0.43
0.89
Dimensions
Notes
Symbol
LS1
LS2
LW
r
r1
r2
Inches
Min
Max
.035
.039
.071
.079
.016
.024
.008
.012
.022
Millimeters
Min
Max
0.89
0.99
1.80
2.01
0.41
0.61
0.20
0.31
0.56
Notes
NOTES:
1.
2.
3.
4.
5.
Dimensions are in inches.
Millimeters are given for general information only.
Hatched areas on package denote metallized areas
Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions, surface mount (UB version).
T4-LDS-0092 Rev. 2 (101320)
Page 4 of 4