APT1001RSVR
11A 1.000Ω
1000V
POWER MOS V ®
D3PAK
V®
Power MOS
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Surface Mount D3PAK Package
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1001RSVR
UNIT
1000
Volts
Drain-Source Voltage
11
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
280
Watts
Linear Derating Factor
2.24
W/°C
VGSM
PD
TJ,TSTG
44
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
11
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
1000
Volts
11
Amps
(VGS = 10V, 0.5 ID[Cont.])
1.00
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
UNIT
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5578 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT1001RSVR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
3050
3660
Coss
Output Capacitance
VDS = 25V
280
390
Reverse Transfer Capacitance
f = 1 MHz
135
200
Crss
Qg
3
Total Gate Charge
Qgs
VGS = 10V
150
225
VDD = 0.5 VDSS
16
24
ID = ID[Cont.] @ 25°C
70
105
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
12
24
VDD = 0.5 VDSS
11
22
ID = ID[Cont.] @ 25°C
55
85
RG = 1.6Ω
12
24
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
Characteristic / Test Conditions
MIN
11
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
44
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
UNIT
Amps
Volts
700
ns
9
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.45
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
40
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 20mH, R = 25Ω, Peak I = 11A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5578 Rev B
0.5
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT1001RSVR
20
VGS=6V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
16
12
4.5V
8
4
4V
3.5V
0
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
30
TJ = +125°C
20
TJ = +125°C
10
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
12
10
8
6
4
2
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
4.5V
8
4
4V
1.5
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.4
VGS=10V
1.2
VGS=20V
1.0
0.8
0
5
10
15
20
25
30
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
12
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
16
3.5V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
40
VGS=15V
VGS=6V & 10V
5V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5578 Rev B
ID, DRAIN CURRENT (AMPERES)
20
APT1001RSVR
OPERATION HERE
LIMITED BY RDS (ON)
10µS
11,000
100µS
5,000
5
1mS
10mS
1
.5
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
DC
I = I [Cont.]
D
VDS=100V
VDS=200V
12
VDS=500V
8
4
0
Coss
500
Crss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
1,000
50
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Ciss
100
.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
10
50
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
50
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
TJ =+150°C
TJ =+25°C
10
5
1
.5
.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
Drain
(Heat Sink)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
1.04 (.041)
1.15 (.045)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Revised
8/29/97
13.79 (.543)
13.99 (.551)
0.46 (.018)
0.56 (.022) {3 Plcs}
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
1.22 (.048)
1.32 (.052)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
11.51 (.453)
11.61 (.457)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
050-5578 Rev B
13.41 (.528)
13.51 (.532)
5,019,522
5,434,095
5,262,336
5,528,058