D
TO-254
G
0.415Ω
2N7228
500 Volt
JX2N7228*
JV2N7228*
S
TM
POWER MOS IV
*QUALIFIED TO MIL-S-19500/592 31/7/92
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
Continuous Drain Current @ TC = 25°C
ed
Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current
IAR
Avalanche Current
1
1
Total Power Dissipation @ TC = 100°C
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
TL
1.2
W/K
750
mJ
15
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
va
la
TJ,TSTG
Watts
60
nc
EAS
Amps
48
150
he
Linear Derating Factor
8
12
R
Total Power Dissipation @ TC = 25°C
PD
Volts
12
at
ID
UNIT
2N7228
°C
300
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
VGS(TH)
IDSS
IGSS
ID(ON)
RDS(ON)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
A
Symbol
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
TYP
±100
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
µA
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
2
4
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
UNIT
Volts
2
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V)
On State Drain Current
MAX
nA
Amps
12
Drain-Source On-State Resistance
2
(VGS = 10V, ID = 8.0A)
0.415
Drain-Source On-State Resistance
2
(VGS = 10V, ID = 8.0A, TC = 125°C)
0.900
Drain-Source On-State Resistance
2
(VGS = 10V, ID = 12.0A)
0.515
Ohms
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
051-5015 Rev D
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2N7228
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
12
24
2410
2900
356
530
125
235
CDC
Drain-to-Case Capacitance
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
VGS = 10V
103
150
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
14
21
ID = ID [Cont.] @ 25°C
42
70
14
35
VDD = 0.5 VDSS
21
190
ID = ID [Cont.] @ 25°C
38
170
12
130
TYP
MAX
Qgd
VGS = 0V
Gate-Drain ("Miller ") Charge
td(on)
f = 1 MHz
Turn-on Delay Time
tr
td(off)
Turn-off Delay Time
tf
pF
VGS = 10V
Rise Time
nC
ns
RG = 2.35Ω
Fall Time
UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
UNIT
12
Amps
(Body Diode)
48
(VGS = 0V, IS = -ID [Cont.])
1.7
Volts
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
296
1600
ns
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
3.5
8.8
µC
TYP
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
0.83
K/W
31
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
0.01
SINGLE PULSE
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
051-5015 Rev D
1.0
t1
t2
0.005
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
3
2N7228
20
VGS=6V, 6.5V & 10V
16
5.5V
12
5V
8
4.5V
4
I D , DRAIN CURRENT (AMPERES)
VGS=10V
VGS=6.5V
16
VGS=6V
12
5V
8
4.5V
4
4V
4V
0
0
I D , DRAIN CURRENT (AMPERES)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
16
TJ = +125°C
12
8
TJ = +125°C
4
0
TJ = +25°C
TJ = -55°C
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
20
4
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
8
3.0
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
2.5
2.0
VGS=10V
1.5
VGS=20V
1.0
0.5
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (VOLTS)
(NORMALIZED)
I D , DRAIN CURRENT (AMPERES)
12
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
0
1.2
16
0
5.5V
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
051-5015 Rev D
I D , DRAIN CURRENT (AMPERES)
20
2N7228
50
7,000
100µS
5,000
10mS
100mS
1
0.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
I = I [Cont.]
D
VDS=100V
VDS=250V
12
VDS=400V
8
4
0
Coss
500
Crss
100
20
D
1,000
DC
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
C, CAPACITANCE (pF)
5
0.1
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
1mS
10
0
50
100
150
200
250
Qgg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
70
0.1
0.5 1
5 10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
I D , DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY R
(ON)
DS
100
50
20
T = +150°C
J
10
T = +25°C
J
5
2
1
0
.5
1.0
1.5
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-254AA Package Outline
13.84 (.545)
13.59 (.535)
1.27 (.050)
1.02 (.040)
6.91 (.272)
6.81 (.268)
3.78 (.149) Dia.
3.53 (.139)
20.32 (.800)
20.07 (.790)
17.40 (.685)
16.89 (.665)
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
Drain
Source
Gate
3.81 (.150) BSC
051-5015 Rev D
6.60 (.260)
6.32 (.249)
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
Dimensions in Millimeters and (Inches)