QIMONDA HYB18M512160BFX

November 2006
HYB18M512160BFX-7.5
DRAMs for Mobile Applications
512-Mbit DDR Mobile-RAM
RoHS compliant
Data S heet
Rev. 1.10
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
HYB18M512160BFX-7.5, ,
Revision History: 2006-11, Rev. 1.10
Page
Subjects (major changes since last revision)
All
Qimonda Update
Pg 49
IDD6 is changed from 2.5mA to 2mA
Data Sheet
2
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Contents
1
1.1
1.2
1.3
1.4
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definition and Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
2.1
2.2
2.2.1
2.2.1.1
2.2.1.2
2.2.1.3
2.2.2
2.2.2.1
2.2.2.2
2.2.2.3
2.3
2.4
2.4.1
2.4.2
2.4.3
2.4.4
2.4.5
2.4.5.1
2.4.5.2
2.4.5.3
2.4.6
2.4.7
2.4.7.1
2.4.7.2
2.4.8
2.4.8.1
2.4.9
2.4.9.1
2.4.9.2
2.4.10
2.4.10.1
2.4.11
2.4.12
2.5
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power On and Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Burst Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Read Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Extended Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Partial Array Self Refresh (PASR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Temperature Compensated Self Refresh (TCSR) with On-Chip Temperature Sensor . . . . . . . . . . . . . . . .
Selectable Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NO OPERATION (NOP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DESELECT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MODE REGISTER SET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ACTIVE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
READ Burst Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
READ to WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
READ to PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BURST TERMINATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
WRITE to READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
WRITE to PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AUTO PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AUTO REFRESH and SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
POWER-DOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DEEP POWER-DOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CLOCK STOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Clock Frequency Change . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Function Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
11
11
12
12
12
14
14
15
15
16
17
18
18
19
20
21
25
26
26
27
28
32
33
35
35
36
36
36
38
39
39
40
40
3
3.1
3.2
3.3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
44
44
46
49
4
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Data Sheet
3
6
6
7
8
9
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Table 16
Table 17
Table 18
Table 19
Table 20
Table 21
Table 22
Table 23
Table 24
Table 25
Table 26
Data Sheet
Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Memory Addressing Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Burst Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Command Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DM Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Inputs Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Timing Parameters for Mode Register Set Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Timing Parameters for ACTIVE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Timing Parameters for READ Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Timing Parameters for WRITE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Timing Parameters for PRECHARGE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Timing Parameters for AUTO REFRESH and SELF REFRESH Commands . . . . . . . . . . . . . . . . . . . . . . . . . 37
Timing Parameters for POWER-DOWN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Minimum Number of Required Clock Pulses per Access Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Truth Table - CKE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Current State Bank n - Command to Bank n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Current State Bank n - Command to Bank m (different bank) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Pin Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Output Slew Rate Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
AC Overshoot / Undershoot Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Maximum Operating Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
4
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
List of Illustrations
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 8
Figure 10
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 22
Figure 23
Figure 24
Figure 25
Figure 26
Figure 27
Figure 28
Figure 29
Figure 30
Figure 33
Figure 35
Figure 37
Figure 38
Figure 39
Figure 40
Data Sheet
Standard Ballout 512-Mbit DDR Mobile-RAM (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power-Up Sequence and Mode Register Sets. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Address / Command Inputs Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Mode Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Bank Activate Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Basic READ Timing Parameters for DQs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
READ Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Consecutive READ Bursts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Nonconsecutive READ Bursts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Random READ Accesses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Terminating a READ Burst . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
READ to WRITE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
READ to PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Basic WRITE Timing Parameters for DQs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
WRITE Burst (min. and max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
WRITE to WRITE (min. and max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Non-Consecutive WRITE to WRITE (max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Random WRITE Cycles (max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Non-Interrupting WRITE to READ (max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Interrupting WRITE to READ (Max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Non-Interrupting WRITE to PRECHARGE (Max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Interrupting WRITE to PRECHARGE (Max. tDQSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Auto Refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Self Refresh Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Power-Down Entry and Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Clock Stop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
AC Overshoot and Undershoot Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
P-VFBGA-60-1 (Plastic Very Thin Fine Ball Grid Array Package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
5
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Overview
1
Overview
1.1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
4 banks × 8 Mbit × 16 organization
Double-data-rate architecture : two data transfers per clock cycle
Bidirectional data strobe (DQS) is transmitted / received with data; to be used in capturing data at the receiver
DQS is edge-aligned with data for READs and center-aligned with data for WRITEs
Differential clock input (CK / CK)
Commands entered on positive CK edge; data and mask data are referenced to both edges of DQS
Four internal banks for concurrent operation
Programmable CAS latency: 2 and 3
Programmable burst length: 2, 4, 8 and 16
Programmable drive strength (full, half, quarter)
Auto refresh and self refresh modes
8192 refresh cycles / 64ms
Auto precharge
Commercial (0°C to +70°C) operating temperature range
TS pad to support Super-Extended temperature range
60-ball Very Thin FBGA package (10.5 × 10.5 × 1.0 mm)
RoHS Compliant Product1)
Power Saving Features
•
•
•
•
•
•
Low supply voltages: VDD = 1.70 V − 1.90 V, VDDQ = 1.70 V − 1.90 V
Optimized operating (IDD0 , IDD4), self refresh (IDD6) and standby currents (IDD2 , IDD3)
DDR I/O scheme with no DLL
Programmable Partial Array Self Refresh (PASR)
Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
Clock Stop, Power-Down and Deep Power-Down modes
Table 1
Performance
Part Number Speed Code
Clock Frequency (fCKmax)
- 7.5
CL = 3
133
MHz
CL = 2
66
MHz
6.5
ns
Access Time (tACmax)
Table 2
Unit
Memory Addressing Scheme
Item
Addresses
Banks
BA0, BA1
Rows
A0 - A12
Columns
A0 - A9
1)RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and
electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council
of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated
biphenyls and polybrominated biphenyl ethers.
Data Sheet
6
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Overview
Table 3
Type
1)
Ordering Information
Package
Description
Commercial Temperature Range
HYB18M512160BFX-7.5 P-VFBGA-60-1
133 MHz 4 Banks × 8 Mbit × 16 Low Power DDR SDRAM
1) HYB: Designator for memory products (HYB: standard temp. range)
18M: 1.8V DDR Mobile-RAM
512: 512 MBit density
160: 16 bit interface width
B: die revision
F: green product
-7.5: speed grades (min. clock cycle time)
1.2
Figure 1
Data Sheet
Pin Configuration
7
8
9
A
VDDQ
DQ0
VDD
DQ14
B
DQ1
DQ2
VSSQ
DQ11
DQ12
C
DQ3
DQ4
VDDQ
VDDQ
DQ9
DQ10
D
DQ5
DQ6
VSSQ
VSSQ
UDQS
DQ8
E
DQ7
LDQS
VDDQ
VSS
UDM
NC
F
NC
LDM
VDD
CKE
CK
CK
G
WE
CAS
RAS
A9
A11
A12
H
CS
BA0
BA1
A6
A7
A8
J
A10/AP
A0
A1
VSS
A4
A5
K
A2
A3
VDD
1
2
3
VSS
DQ15
VSSQ
VDDQ
DQ13
VSSQ
Standard Ballout 512-Mbit DDR Mobile-RAM (Top View)
7
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Overview
1.3
Description
The HYB18M512160BFX is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.
It is internally configured as a quad-bank DRAM.
The HYB18M512160BFX uses a double-data-rate architecture to achieve high-speed operation. The double-datarate architecture is essentially a 2n prefetch architecture, with an interface designed to transfer two data words per
clock cycle at the I/O pins. A single READ or WRITE access for the DDR Mobile-RAM consists of a single 2n-bit
wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock
cycle data transfers at the I/O pins.
The HYB18M512160BFX is especially designed for mobile applications. It operates from a 1.8V power supply.
Power consumption in self refresh mode is drastically reduced by an On-Chip Temperature Sensor (OCTS); it can
further be reduced by using the programmable Partial Array Self Refresh (PASR).
A conventional data-retaining Power-Down (PD) mode is available as well as a non-data-retaining Deep PowerDown (DPD) mode. For further power-savings the clock may be stopped during idle periods.
The HYB18M512160BFX is housed in a 60-ball P-VFBGA package. It is available in Commercial (0°C to 70°C)
temperature range.
Bank 0
Memory Array
CK/CK
(8192 x 512 x 32)
Data
10
Bank Column Logic
2
2
32
Column Address
Counter / Latch
IO Gating
DQM Mask Logic
16
16
9
16
DQ0DQ15
UDM,
LDM
DQS
Generator
Input Reg.
Write Mask
FIFO
4
&
Drivers 32
clk
out
Column
Decoder
Drivers
Sense Amplifier
CK/CK
clk
in Data
2
16
Recievers
8192
Bank 3
MUX
13
Bank 2
13
15
Refresh Counter
A0-A12
BA0,BA1
Address Register
13
Bank 0
Row Address Latch
& Decoder
13
Mode
Registers
Row Address Mux
Bank 1
Read Latch
Command
Decode
CS
RAS
CAS
WE
Control Logic
CKE
CK
CK
2
UDQS
LDQS
2
Col0
Col0
Note 1: The Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does not represent the actual
circuit implementation
Note 2: UDM / LDM are unidirectional signals (input only), but internally loaded to match the load of the bidirectional DQ and UDQS / LDQS
Figure 2
Data Sheet
Functional Block Diagram
8
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Overview
1.4
Pin Definition and Description
Table 4
Pin Description
Ball
Type
Detailed Function
CK, CK
Input
Clock: CK and CK are differential clock inputs. All address and control inputs are
sampled on crossing of the positive edge of CK and negative edge of CK.
CKE
Input
Clock Enable: CKE HIGH activates and CKE LOW deactivates internal clock signals,
and device input buffers and output drivers. Taking CKE LOW provides precharge powerdown and self refresh operation (all banks idle), or active power-down (row active in any
bank). CKE must be maintained HIGH throughout read and write accesses. Input buffers,
excluding CK, CK and CKE are disabled during power-down. Input buffers, excluding
CKE are disabled during self refresh.
CS
Input
Chip Select: All commands are masked when CS is registered HIGH. CS provides for
external bank selection on systems with multiple banks. CS is considered part of the
command code
RAS, CAS,
WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being
entered.
DQ0 - DQ15
I/O
Data Inputs/Output: Bi-directional data bus (16 bit)
LDQS,
UDQS
I/O
Data Strobe: output with read data, input with write data. Edge-aligned with read data,
centered with write data. Used to capture write data.
LDQS corresponds to the data on DQ0 - DQ7; UDQS to the data on DQ8 - DQ15.
LDM, UDM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH coincident with that input data during a WRITE access. DM is
sampled on both edges of DQS. Although DM pins are input only, the DM loading
matches the DQ and DQS loading.
DM may be driven HIGH, LOW, or floating during READs.
LDM corresponds to the data on DQ0 - DQ7; UDM to the data on DQ8 - DQ15.
BA0, BA1
Input
Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVATE, READ, WRITE
or PRECHARGE command is being applied. BA0, BA1 also determine which mode
register is to be loaded during a MODE REGISTER SET command (MRS or EMRS).
A0 - A12
Input
Address Inputs: Provide the row address for ACTIVE commands and the column
address and Auto Precharge bit for READ/WRITE commands, to select one location out
of the memory array in the respective bank. A10 (=AP) is sampled during a precharge
command to determine whether the PRECHARGE applies to one bank (A10=LOW) or all
banks (A10=HIGH). If only one bank is to be precharged, the bank is selected by BA0 and
BA1. The address inputs also provide the op-code during a MODE REGISTER SET
command.
VDDQ
Supply I/O Power Supply: Isolated power for DQ output buffers for improved noise immunity:
VDDQ = 1.70 V − 1.90 V
VSSQ
VDD
VSS
Supply I/O Ground
N.C.
–
Data Sheet
Supply Power Supply: Power for the core logic and input buffers, VDD = 1.70 V − 1.90 V
Supply Ground
No Connect
9
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2
Functional Description
The 512-Mbit DDR Mobile-RAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912
bits. It is internally configured as a quad-bank DRAM.
READ and WRITE accesses to the DDR Mobile-RAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration
of an ACTIVE command, followed by a READ or WRITE command. The address bits registered coincident with
the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the banks, A0 - A12
select the row). The address bits registered coincident with the READ or WRITE command are used to select the
starting column location for the burst access.
Prior to normal operation, the DDR Mobile-RAM must be initialized. The following sections provide detailed
information covering device initialization, register definition, command description and device operation.
2.1
Power On and Initialization
The DDR Mobile-RAM must be powered up and initialized in a predefined manner (see Figure 3). Operational
procedures other than those specified may result in undefined operation.
6$$
6$$
1
—S
T#+
T2&# T20
T2&# T-2$ T-2$
#+
#+
#+%
#OM
MA
ND
./0
02%
!2&
!DDRE
SS
!LL
"ANKS !
!2&
-23
-23
!#4
#ODE
#ODE
2!
#ODE
#ODE
2!
"!
,
"!
,
"!
,
"!
(
"!
"!"!
$-
$1$1
3
(IGH:
6$$
6$
$
1
P
OWE
RE
DUP
#LOCK S TABLE
,OAD
-ODE2
EG
,OAD
%XT -O
DE2E
G
$O
NgT#A
RE
Figure 3
Data Sheet
Power-Up Sequence and Mode Register Sets
10
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
1. At first, device core power (VDD) and device IO power (VDDQ) must be brought up simultaneously. Typically VDD
and VDDQ are driven from a single power converter output.
Assert and hold CKE to a HIGH level.
2. After VDD and VDDQ are stable and CKE is HIGH, apply stable clocks.
3. Wait for 200µs while issuing NOP or DESELECT commands.
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least tRP period.
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least tRFC
period.
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode
Register, each followed by NOP or DESELECT commands for at least tMRD period; the order in which both
registers are programmed is not important.
Following these steps, the DDR Mobile-RAM is ready for normal operation.
2.2
Register Definition
2.2.1
Mode Register
The Mode Register is used to define the specific mode of operation of the DDR Mobile-RAM. This definition
includes the selection of a burst length (bits A0-A2), a burst type (bit A3) and a CAS latency (bits A4-A6). The Mode
Register is programmed via the MODE REGISTER SET command (with BA0 = 0 and BA1 = 0) and will retain the
stored information until it is programmed again or the device loses power.
The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before
initiating any subsequent operation. Violating either of these requirements results in unspecified operation.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
MR
Mode Register Definition
(BA[1:0] = 00B)
BA1
BA0
A12
A11
A10
A9
A8
A7
0
0
0
0
0
0
0
0
Field
Bits
Type
Description
CL
[6:4]
w
CAS Latency
010 2
011 3
A6
A5
CL
A4
A3
BT
A2
A1
A0
BL
Note: All other bit combinations are RESERVED.
BT
3
w
Burst Type
0
Sequential
1
Interleaved
BL
[2:0]
w
Burst Length
001 2
010 4
011 8
100 16
Note: All other bit combinations are RESERVED.
Data Sheet
11
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.2.1.1
Burst Length
READ and WRITE accesses to the DDR Mobile-RAM are burst oriented, with the burst length being
programmable. The burst length determines the maximum number of column locations that can be accessed for
a given READ or WRITE command. Burst lengths of 2, 4, 8 or 16 locations are available.
When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected.
All accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary
is reached. The block is uniquely selected by A1 - A9 when the burst length is set to two, by A2 - A9 when the
burst length is set to four, by A3 - A9 when the burst length is set to eight and by A4 - A9 when the burst length
is set to sixteen. The remaining (least significant) address bit(s) is (are) used to select the starting location within
the block. The programmed burst length applies to both READ and WRITE bursts.
2.2.1.2
Burst Type
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Table 5.
2.2.1.3
Read Latency
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a READ command and
the availability of the first piece of output data. The latency can be programmed to 2 or 3 clocks.
If a READ command is registered and the latency is 3 clocks, the first data element will be valid after (2 * tCK + tAC).
If a READ command is registered and the latency is 2 clocks, the first data element will be valid after (tCK + tAC).
For details please refer to the READ command description.
Data Sheet
12
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Table 5
Burst
Length
Burst Definition
Starting Column
Address
A3 A2 A1 A0
Sequential
Interleaved
0
0-1
0-1
1
1-0
1-0
0
0
0-1-2-3
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
2-3-0-1
1
1
3-0-1-2
3-2-1-0
0
0
0
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
0
0
0
0
0 -1 -2 -3 -4 - 5 - 6 - 7 - 8 - 9 - A - B - C - D - E - F 0 -1 -2 -3 - 4 - 5 - 6 - 7 - 8 - 9 - A - B - C - D - E - F
0
0
0
1
1 -2 -3 -4 -5 - 6 - 7 - 8 - 9 - A - B - C - D - E - F - 0 1 -0 -3 -2 - 5 - 4 - 7 - 6 - 9 - 8 - B - A - D - C - F - E
0
0
1
0
2 -3 -4 -5 -6 - 7 - 8 - 9 - A - B - C - D - E - F - 0 - 1 2 -3 -0 -1 - 6 - 7 - 4 - 5 - A - B - 8 - 9 - E - F - C - D
0
0
1
1
3 -4 -5 -6 -7 - 8 - 9 - A - B - C - D - E - F - 0 - 1 - 2 3 -2 -1 -0 - 7 - 6 - 5 - 4 - B - A - 9 - 8 - F -E - D - C
0
1
0
0
4 -5 -6 -7 -8 - 9 - A - B - C - D - E - F - 0 - 1 - 2 - 3 4 -5 -6 -7 - 0 - 1 - 2 - 3 - C - D - E - F - 8 - 9 - A - B
0
1
0
1
5 -6 -7 -8 -9 - A - B - C - D - E - F - 0 - 1 - 2 - 3 - 4 5 -4 -7 -6 - 1 - 0 - 3 - 2 - D - C - F - E - 9 - 8 - B - A
0
1
1
0
6 -7 -8 -9 -A - B - C - D - E - F - 0 - 1 - 2 - 3 - 4 - 5 6 -7 -4 -5 - 2 - 3 - 0 - 1 - E - F - C - D - A - B - 8 - 9
0
1
1
1
7 -8 -9 -A - B - C - D - E - F - 0 - 1 - 2 - 3 - 4 - 5 - 6 7 -6 -5 -4 - 3 - 2 - 1 - 0 - F - E - D - C - B - A - 9 - 8
1
0
0
0
8 -9 -A - B - C - D - E - F - 0 - 1 - 2 - 3 - 4 - 5 - 6 - 7 8 -9 -A - B - C - D - E - F - 0 - 1 - 2 - 3 - 4 - 5 - 6 - 7
1
0
0
1
9 -A - B - C - D - E - F - 0 - 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 9 -8 -B - A - D - C - F - E - 1 - 0 - 3 - 2 - 5 - 4 - 7 - 6
1
0
1
0
A - B -C - D - E - F - 0 - 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 A - B - 8 - 9 - E - F - C - D - 2 - 3 - 0 - 1 - 6 - 7 - 4 - 5
1
0
1
1
B-C-D-E-F-0-1-2-3-4-5-6-7-8-9-A B-A-9-8-F-E-D-C-3-2-1-0-7-6-5-4
1
1
0
0
C-D-E-F-0-1-2-3-4-5-6-7-8-9-A-B C-D-E-F-8-9-A-B-4-5-6-7-0-1-2-3
1
1
0
1
D-E-F-0-1-2-3-4-5-6-7-8-9-A-B-C D-C-F-E-9-8-B-A-5-4-7-6-1-0-3-2
1
1
1
0
E-F-0-1-2-3-4-5-6-7-8-9-A-B-C-D E-F-C-D-A-B-8-9-6-7-4-5-2-3-0-1
1
1
1
1
F-0-1-2-3-4-5-6-7-8-9-A-B-C-D-E F-E-D-C-B-A-9-8-7-6-5-4-3-2-1-0
2
4
8
16
Order of Accesses Within a Burst
(Hexadecimal Notation)
Notes
1.
2.
3.
4.
For a burst length of 2, A1-Ai select the two-data-element block; A0 selects the first access within the block.
For a burst length of 4, A2-Ai select the four-data-element block; A0-A1 select the first access within the block.
For a burst length of 8, A3-Ai select the eight-data-element block; A0-A2 select the first access within the block.
For a burst length of 16, A4-Ai select the sixteen-data-element block; A0-A3 select the first access within the
block.
5. Whenever a boundary of the block is reached within a given sequence, the following access wraps within the
block.
Data Sheet
13
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.2.2
Extended Mode Register
The Extended Mode Register controls additional low power features of the device. These include the Partial Array
Self Refresh (PASR), the Temperature Compensated Self Refresh (TCSR) and the drive strength selection for the
DQs. The Extended Mode Register is programmed via the MODE REGISTER SET command (with BA0 = 0 and
BA1 = 1) and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle, and the controller must wait the specified
time before initiating any subsequent operation. Violating either of these requirements result in unspecified
operation. Address bits A0 - A2 specify the Partial Array Self Refresh (PASR) and bits A5 - A6 the Drive
Strength, while bits A7 - A12 shall be written to zero. Bits A3 and A4 are “don’t care” (see below).
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
EMR
Extended Mode Register
(BA[1:0] = 10B)
BA1
BA0
A12
A11
A10
A9
A8
A7
1
0
0
0
0
0
0
0
Field
Bits
Type
Description
DS
[6:5]
w
Selectable Drive Strength
00 Full Drive Strength
01 Half Drive Strength
10 Quarter Drive Strength
A6
A5
DS
A4
A3
(TCSR)
A2
A1
A0
PASR
Note: All other bit combinations are RESERVED.
TCSR [4:3]
w
Temperature Compensated Self Refresh
XX Superseded by on-chip temperature sensor (see text)
PASR [2:0]
w
Partial Array Self Refresh
000 all banks
001 half array (BA1 = 0)
010 quarter array (BA1 = BA0 = 0)
101 1/8 array (BA1 = BA0 = RA12 = 0)
110 1/16 array (BA1 = BA0 = RA12 = RA11 = 0)
Note: All other bit combinations are RESERVED.
2.2.2.1
Partial Array Self Refresh (PASR)
Partial Array Self Refresh is a power-saving feature specific to DDR Mobile-RAMs. With PASR, self refresh may
be restricted to variable portions of the total array. The selection comprises all four banks (default), two banks, one
bank, half of one bank, and a quarter of one bank. Data written to the non activated memory sections will get lost
after a period defined by tREF (cf. Table 14).
Data Sheet
14
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.2.2.2
Temperature Compensated Self Refresh (TCSR) with On-Chip Temperature
Sensor
DRAM devices store data as electrical charge in tiny capacitors that require a periodic refresh in order to retain
the stored information. This refresh requirement heavily depends on the die temperature: high temperatures
correspond to short refresh periods, and low temperatures correspond to long refresh periods.
The DDR Mobile-RAM is equipped with an on-chip temperature sensor which continuously senses the actual die
temperature and adjusts the refresh period in Self Refresh mode accordingly. This makes any programming of the
TCSR bits in the Extended Mode Register obsolete. It also is the superior solution in terms of compatibility and
power-saving, because
•
•
•
it is fully compatible to all processors that do not support the Extended Mode Register
it is fully compatible to all applications that only write a default (worst case) TCSR value, e.g. because of the
lack of an external temperature sensor
it does not require any processor interaction for regular TCSR updates
2.2.2.3
Selectable Drive Strength
The drive strength of the DQ output buffers is selectable via bits A5 and A6. The “full drive strength” (default) is
suitable for heavier loaded systems. The “half drive strength” is intended for lightly loaded systems or systems with
reduced performance requirements. Finally, for systems with point-to-point connection, a “quarter drive strength”
is available. I-V curves for full and half drive strengths are included in this document.
Data Sheet
15
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.3
State Diagram
Power
On
Power
applied
Deep
Power
Down
DPDSX
Precharge
All Banks
Self
Refresh
DPDS
REFSX
REFS
Idle
MRS
MRS
EMRS
Auto
Refresh
REFA
All banks
precharged
CKEL
CKEH
Active
Power
Down
Precharge
Power
Down
ACT
CKEH
CKEL
Row
Active
Burst
Stop
WRITE
READ
BST
WRITE
WRITEA
WRITE
READ
WRITEA
READA
WRITE A
PRE
PRE
READ
READA
PRE
PRE
READ
READA
READ A
Precharge
PREALL
Automatic Sequence
Command Sequence
ACT = Active
BST = Burst Terminate
CKEL = Enter Power-Down
CKEH = Exit Power-Down
DPDS = Enter Deep Power-Down
DPDSX = Exit Deep Power-Down
EMRS = Ext. Mode Reg. Set
MRS = Mode Register Set
PRE = Precharge
PREALL = Precharge All Banks
REFA = Auto Refresh
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
READ = Read w/o Auto Precharge
READA = Read with Auto Precharge
WRITE = Write w/o Auto Precharge
WRITEA = Write with Auto Precharge
Note: Use caution with this diagram. It is indented to provide a floorplan of the possible state transitions and commands
to control them, not all details. In particular situations involving more than one bank are not captured in full detail.
Figure 4
Data Sheet
State Diagram
16
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4
Commands
Table 6
Command Overview
Command
CS
RAS CAS WE
Address
Notes
DESELECT
H
X
X
X
X
1)2)
NO OPERATION
L
H
H
H
X
1)2)
ACT
ACTIVE (Select bank and row)
L
L
H
H
Bank / Row
1)3)
RD
READ (Select bank and column and start read burst)
L
H
L
H
Bank / Col
1)4)
WR
WRITE (Select bank and column and start write burst)
L
H
L
L
Bank / Col
1)4)
BST
BURST TERMINATE or DEEP POWER-DOWN
L
H
H
L
X
1)5)
PRE
PRECHARGE (Deactivate row in bank or banks)
L
L
H
L
Code
1)6)
ARF
AUTO REFRESH or SELF REFRESH entry
L
L
L
H
X
MRS
MODE REGISTER SET
L
L
L
L
Op-Code
NOP
1)
2)
3)
4)
5)
6)
7)
8)
9)
1)7)8)
1)9)
CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER DOWN.
DESELECT and NOP are functionally interchangeable.
BA0, BA1 provide the bank address, and A0 - A12 provide the row address.
BA0, BA1 provide the bank address, A0 - A9 provide the column address; A10 HIGH enables the Auto Precharge feature
(nonpersistent), A10 LOW disables the Auto Precharge feature.
This command is BURST TERMINATE if CKE is HIGH, DEEP POWER-DOWN if CKE is LOW. The BURST TERMINATE
command is defined for READ bursts with Auto Precharge disabled only; it is undefined (and should not be used) for read
bursts with Auto Precharge enabled, and for write bursts.
A10 LOW: BA0, BA1 determine which bank is precharged.
A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t Care”.
This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.
BA0, BA1 select either the Mode Register (BA0 = 0, BA1 = 0) or the Extended Mode Register (BA0 = 0, BA1 = 1); other
combinations of BA0, BA1 are reserved; A0 - A12 provide the op-code to be written to the selected mode register.
Table 7
DM Operation
Name (Function)
DM
DQs Notes
Write Enable
L
Valid
1)
Write Inhibit
H
X
1)
1) Used to mask write data provided coincident with the corresponding data
Address (BA0, BA1, A0 - A12) and command inputs (CKE, CS, RAS, CAS, WE) are all registered on the crossing
of the positive edge of CK and the negative edge of CK. Figure 5 shows the basic timing parameters, which apply
to all commands and operations.
tCK
tCH
tCL
CK
CK
Input
tIS tIH
Valid
Valid
Valid
= Don't Care
Figure 5
Data Sheet
Address / Command Inputs Timing Parameters
17
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Table 8
Inputs Timing Parameters1)
Parameter
Symbol
Clock high-level width
Clock low-level width
Clock cycle time
tCH
tCL
tCK
Address and control input setup time
Address and control input hold time
CL = 3
CL = 2
fast slew rate
slow slew rate
fast slew rate
slow slew rate
Address and control input pulse width
1)
2)
3)
4)
5)
6)
7)
tIS
tIH
tIPW
- 7.5
Unit Notes
Min.
Max.
0.45
0.55
tCK –
0.45
0.55
tCK –
7.5
–
ns 2)
15
–
1.3
–
ns 3)4)5)
3)6)
1.5
–
1.3
–
ns 3)4)
3)6)
1.5
–
3.0
–
ns 7)
All AC timing characteristics assume an input slew rate of 1.0 V/ns.
The only time that the clock frequency is allowed to change is during power-down, self-refresh or clock stop modes.
The transition time for address and command inputs is measured between VIH and VIL.
For command / address input slew rate ≥ 1V/ns.
A CK/CK differential slew rate of 2.0 V/ns is assumed for this parameter.
For command / address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns.
This parameter guarantees device timing. It is verified by device characterization but are not subject to production test.
2.4.1
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to
perform a NOP to a DDR Mobile-RAM which is selected
(CS = LOW). This prevents unwanted commands from
being registered during idle states. Operations already
in progress are not affected.
CK
CK
CKE
(High)
CS
RAS
CAS
WE
A0-A12
BA0,BA1
= Don't Care
Figure 6
No Operation Command
2.4.2
DESELECT
The DESELECT function (CS = HIGH) prevents new commands from being executed by the DDR Mobile-RAM.
The DDR Mobile-RAM is effectively deselected. Operations already in progress are not affected.
Data Sheet
18
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.3
MODE REGISTER SET
The Mode Register and Extended Mode Register are
loaded via inputs A0 - A12 (see mode register
descriptions in Chapter 2.2). The MODE REGISTER
SET command can only be issued when all banks are
idle and no bursts are in progress. A subsequent
executable command cannot be issued until tMRD is
met.
CK
CK
CKE
(High)
CS
RAS
CAS
WE
A0-A12
Code
BA0,BA1
Code
= Don't Care
Figure 7
Mode Register Set Command
CK
CK
Command
MRS
NOP
Valid
tMRD
Address
Code
Valid
= Don't Care
Code = Mode Register / Extended Mode Register selection
(BA0, BA1) and op-code (A0 - A12)
Figure 8
Mode Register Definition
Table 9
Timing Parameters for Mode Register Set Command
Parameter
Symbol
MODE REGISTER SET command period
Data Sheet
tMRD
19
- 7.5
Unit Notes
Min. Max.
2
–
tCK –
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.4
ACTIVE
Before any READ or WRITE commands can be issued
to a bank within the DDR Mobile-RAM, a row in that
bank must be “opened” (activated). This is
accomplished via the ACTIVE command and
addresses BA0, BA1, A0 - A12 (see Figure 9), which
decode and select both the bank and the row to be
activated. After opening a row (issuing an ACTIVE
command), a READ or WRITE command may be
issued to that row, subject to the tRCD specification. A
subsequent ACTIVE command to a different row in the
same bank can only be issued after the previous active
row has been “closed” (precharged).
CK
CK
CKE
(High)
CS
RAS
CAS
WE
A0-A12
RA
BA0,BA1
BA
The minimum time interval between successive
ACTIVE commands to the same bank is defined by tRC.
A subsequent ACTIVE command to another bank can
be issued while the first bank is being accessed, which
results in a reduction of total row-access overhead. The
minimum time interval between successive ACTIVE
commands to different banks is defined by tRRD.
= Don't Care
BA = Bank Address
RA = Row Address
Figure 9
ACTIVE Command
CK
CK
Command
ACT
NOP
ACT
NOP
A0-A12
Row
Row
Col
BA0, BA1
BA x
BA y
BA y
tRRD
NOP
RD/WR
tRCD
Figure 10
Bank Activate Timings
Table 10
Timing Parameters for ACTIVE Command
Parameter
= Don't Care
Symbol
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE bank A to ACTIVE bank B delay
NOP
tRC
tRCD
tRRD
- 7.5
Unit Notes
Min. Max.
65
–
ns 1)
22.5
–
ns 1)
15
–
ns 1)
1) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period ; round to the next higher integer.
Data Sheet
20
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.5
READ
READ bursts are initiated with a READ command, as
shown in Figure 11.
CK
CK
CKE
Basic timings for the DQs are shown in Figure 12; they
apply to all read operations.
(High)
The starting column and bank addresses are provided
with the READ command and Auto Precharge is either
enabled or disabled for that burst access. If Auto
Precharge is enabled, the row that is accessed will start
precharge at the completion of the burst, provided tRAS
has been satisfied. For the generic READ commands
used in the following illustrations, Auto Precharge is
disabled.
CS
RAS
CAS
WE
A0-A9
CA
Enable AP
A10
AP
Disable AP
BA0,BA1
BA
= Don't Care
BA = Bank Address
CA = Column Address
AP = Auto Precharge
Figure 11
CK
READ Command
tCK
tCK
tCH
tCL
CK
tDQSCK
tACmax
tDQSCK
tDQSQmax
tAC
DQ
tHZ
DO n+1 DO n+2 DO n+3
tQH
tDQSCK
tQH
tDQSCK
tRPRE
tRPST
tDQSQmax
tAC
DQ
DO n
tLZ
tACmin
DQS
tRPST
tRPRE
DQS
DO n
tLZ
tQH
tHZ
DO n+1 DO n+2 DO n+3
tQH
DO n = Data Out from column n
= Don't Care
Burst Length = 4 in the case shown
CAS Latency = 3 in the case shown
All DQ are valid tAC after the CK edge. All DQ are valid tDQSQ after the DQS edge, regardless of tAC
Figure 12
Data Sheet
Basic READ Timing Parameters for DQs
21
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Table 11
Timing Parameters for READ Command
Parameter
Symbol
DQ output access time from CK/CK
DQS output access time from CK/CK
DQ & DQS low-impedance time from CK/CK
DQ & DQS high-impedance time from CK/CK
DQS - DQ skew
DQ / DQS output hold time from DQS
Data hold skew factor
Read preamble
CL = 3
CL = 2
Read postamble
ACTIVE to PRECHARGE command period
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
tAC
tDQSCK
tLZ
tHZ
tDQSQ
tQH
tQHS
tRPRE
tRPST
tRAS
tRC
tRCD
tRP
- 7.5
Min.
2.0
2.0
1.0
–
–
tHP-tQHS
–
0.9
0.7
0.4
45
65
22.5
22.5
Unit
Max.
6.5
6.5
–
6.5
0.6
–
0.75
1.1
1.1
0.6
70,000
–
–
–
Notes
ns
ns
ns
ns
ns
ns
ns
tCK
1)2)
tCK
ns
ns
ns
ns
–
1)2)
3)
3)
4)
5)
5)
–
6)
6)
6)
6)
1) The output timing reference level is VDDQ/2.
2) Parameters tAC and tQH are specified for full drive strength and a reference load of 20pF. This reference load is not intended
to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a
production tester. For half drive strength with a nominal load of 10pF parameters tAC and tQH are expected to be in the same
range. However, these parameters are not subject to production test but are estimated by device characterization. Use of
IBIS or other simulation tools for system validation is suggested.
3) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
4) tDQSQ consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for
any given cycle.
5) tQH = tHP - tQHS, where tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCL,
tCH). tQHS accounts for 1) the pulse duration distortion of on-chip clock circuits; and 2) the worst case push-out of DQS on
one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin
skew and output pattern effects, and p-channel to n-channel variation of the output drivers.
6) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period ; round to the next higher integer.
During READ bursts, the valid data-out element from the starting column address will be available following the
CAS latency after the READ command.
The diagrams in Figure 13 show general timing for each supported CAS latency setting. DQS is driven by the DDR
Mobile-RAM along with output data. The initial low state on DQS is known as the read preamble; the low state
coincident with the last data-out element is known as the read postamble.
Upon completion of a burst, assuming no other READ commands have been initiated, the DQs will go High-Z.
Data Sheet
22
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
CK
CK
Command
Address
READ
NOP
NOP
NOP
NOP
NOP
BA,Col n
CL=2
DQS
DQ
DO n
CL=3
DQS
DQ
DO n
= Don't Care
DO n = Data Out from column n
BA, Col n = Bank A, Column n
Burst Length = 4; 3 subsequent elements of Data Out appear in the programmed order following DO n
Figure 13
READ Burst
Data from any READ burst may be concatenated with or truncated with data from a subsequent READ command.
In either case, a continuous flow of data can be maintained. The first data element from the new burst follows either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated.
The new READ command should be issued x cycles after the first READ command, where x equals the number
of desired data element pairs (pairs are required by the 2n prefetch architecture). This is shown in Figure 14.
CK
CK
Command
Address
READ
NOP
BA,Col n
READ
NOP
NOP
NOP
BA,Col b
CL=2
DQS
DQ
DO n
DO b
CL=3
DQS
DQ
DO n
DO b
= Don't Care
DO n (or b) = Data Out from column n (or column b)
Burst Length = 4, 8 or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the first)
3 subsequent elements of Data Out appear in the programmed order following DO n
3 (or 7 or 15) subsequent elements of Data Out appear in the programmed order following DO b
Read commands shown must be to the same device
Figure 14
Data Sheet
Consecutive READ Bursts
23
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
A READ command can be initiated on any clock cycle following a previous READ command. Nonconsecutive
READ data is illustrated in Figure 15.
CK
CK
Command
Address
READ
NOP
NOP
READ
BA,Col n
NOP
NOP
BA,Col b
CL=2
DQS
DQ
DO n
DO b
CL=3
DQS
DQ
DO n
= Don't Care
DO n (or b) = Data Out from column n (or column b)
BA A Col n (b) = Bank A, Column n (b)
Burst Length = 4; 3 subsequent elements of Data Out appear in the programmed order following DO n (b)
Figure 15
Nonconsecutive READ Bursts
Full-speed random READ accesses (Burst Length = 2, 4, 8 or 16) within a page (or pages) can be performed as
shown in Figure 16.
CK
CK
Command
Address
READ
READ
READ
READ
NOP
BA,Col n
BA,Col x
BA,Col b
BA,Col g
NOP
CL=2
DQS
DQ
DO n
DO n'
DO x
DO x'
DO b
DO b'
DO g
DO g'
DO n
DO n'
DO x
DO x'
DO b
DO b'
CL=3
DQS
DQ
DO n, etc. = Data Out from column n, etc.
n', x', etc. = Data Out elements, according to the programmed burst order
BA, Col n = Bank A, Column n
Burst Length = 2, 4, 8 or 16 in cases shown (if burst of 4, 8 or 16, the burst is interrupted)
Reads are to active rows in any banks
Figure 16
Data Sheet
= Don't Care
Random READ Accesses
24
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.5.1
READ Burst Termination
Data from any READ burst may be truncated using the BURST TERMINATE command (see Figure 20), provided
that Auto Precharge was not activated. The BURST TERMINATE latency is equal to the CAS latency, i.e. the
BURST TERMINATE command should be issued x clock cycles after the READ command, where x equals the
number of desired data element pairs. This is shown in Figure 17.
CK
CK
Command
Address
READ
NOP
BST
NOP
NOP
NOP
BA,Col n
CL=2
DQS
DQ
DO n
CL=3
DQS
DQ
DO n
DO n = Data Out from column n
BA, Col n = Bank A, Column n
Cases shown are bursts of 8 terminated after 4 data elements.
3 subsequent elements of Data Out appear in the programmed order following DO n
Figure 17
Data Sheet
= Don't Care
Terminating a READ Burst
25
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.5.2
READ to WRITE
Data from any READ burst must be completed or truncated before a subsequent WRITE command can be issued.
If truncation is necessary, the BURST TERMINATE command must be used, as shown in Figure 18.
CK
CK
Command
Address
READ
BST
NOP
BA,Col n
WRITE
NOP
NOP
BA,Col b
CL=2
tDQSS
DQS
DQ
DO n
Di b
DM
Command
Address
READ
BST
NOP
NOP
BA,Col n
WRITE
NOP
BA,Col b
CL=3
DQS
DQ
DO n
Di b
DM
DO n = Data Out from column n; DI b = Data In to column b
1 subsequent element of Data Out appear in the programmed order following DO n.
Data In elements are applied following DI b in the programmed order
Figure 18
READ to WRITE
2.4.5.3
READ to PRECHARGE
= Don't Care
A READ burst may be followed by, or truncated with a PRECHARGE command to the same bank (provided that
Auto Precharge was not activated).
The PRECHARGE command should be issued x clock cycles after the READ command, where x equals the
number of desired data element pairs. This is shown in Figure 19. Following the PRECHARGE command, a
subsequent command to the same bank cannot be issued until tRP is met. Please note that part of the row
precharge time is hidden during the access of the last data elements.
In the case of a READ being executed to completion, a PRECHARGE command issued at the optimum time (as
described above) provides the same operation that would result from the same READ burst with Auto Precharge
enabled. The disadvantage of the PRECHARGE command is that it requires that the command and address
busses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command
is that it can be used to truncate bursts.
Data Sheet
26
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
CK
CK
Command
Address
READ
NOP
PRE
NOP
NOP
Bank
(a or all)
BA,Col n
ACT
BA, Row
tRP
CL=2
DQS
DQ
DO n
CL=3
DQS
DQ
DO n
= Don't Care
DO n = Data Out from column n
Cases shown are either uninterrupted burst of 4, or interrupted bursts of 8 or 16
3 subsequent elements of Data Out appear in the programmed order following DO n
Precharge may be applied at (BL / 2) tCK after the READ command.
Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks.
The ACTIVE command may be applied if tRC has been met.
Figure 19
READ to PRECHARGE
2.4.6
BURST TERMINATE
The BURST TERMINATE command is used to truncate
READ bursts (with Auto Precharge disabled). The most
recently registered READ command prior to the
BURST TERMINATE command will be truncated, as
shown in Figure 17.
CK
CK
CKE
(High)
CS
RAS
CAS
WE
A0-A12
BA0,BA1
= Don't Care
Figure 20
Data Sheet
BURST TERMINATE Command
27
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.7
WRITE
WRITE bursts are initiated with a WRITE command, as
shown in Figure 21. Basic timings for the DQs are
shown in Figure 22; they apply to all write operations.
CK
CK
CKE
(High)
The starting column and bank addresses are provided
with the WRITE command, and Auto Precharge is
either enabled or disabled for that access. If Auto
Precharge is enabled, the row being accessed is
precharged at the completion of the write burst. For the
generic WRITE commands used in the following
illustrations, Auto Precharge is disabled.
CS
RAS
CAS
WE
A0-A9
CA
Enable AP
A10
AP
Disable AP
BA0,BA1
BA
= Don't Care
BA = Bank Address
CA = Column Address
AP = Auto Precharge
Figure 21
WRITE Command
tCK
CK
tCH
tCL
CK
Case 1:
tDQSS = min
tDQSS
tDSH
tDQSH
tDSH
tWPST
DQS
tWPRES
tDQSL
tWPRE
tDH
tDS
DQ, DM
DI n
Case 2:
tDQSS = max
tDQSS
tDSS
tDQSH
tWPST
DQS
tWPRES
tDQSL
tWPRE
tDH
tDS
DQ, DM
DI n
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI n.
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS
must fall within the ± 25% window of the corresponding positive clock edge.
Figure 22
Data Sheet
tDSS
= Don't Care
Basic WRITE Timing Parameters for DQs
28
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Table 12
Timing Parameters for WRITE Command
Parameter
Symbol
- 7.5
Unit Notes
Min.
Max.
DQ and DM input setup time
fast slew rate
tDS
0.75
–
ns 1)2)3)
1)2)4)
slow slew rate
0.85
–
DQ and DM input hold time
fast slew rate
tDH
0.75
–
ns 1)2)3)
1)2)4)
slow slew rate
0.85
–
DQ and DM input pulse width
tDIPW
1.7
–
ns 5)
Write command to 1st DQS latching transition
tDQSS
0.75
1.25
tCK –
DQS input high-level width
tDQSH
0.4
0.6
tCK –
DQS input low-level width
tDQSL
0.4
0.6
tCK –
DQS falling edge to CK setup time
tDSS
0.2
–
tCK –
DQS falling edge hold time from CK
tDSH
0.2
–
tCK –
Write preamble setup time
tWPRES
0
–
ns 6)
Write postamble
tWPST
0.4
0.6
tCK 7)
Write preamble
tWPRE
0.25
–
tCK –
ACTIVE to PRECHARGE command period
tRAS
45
70,000
ns 8)
ACTIVE to ACTIVE command period
tRC
65
–
ns 8)
ACTIVE to READ or WRITE delay
tRCD
22.5
–
ns 8)
WRITE recovery time
tWR
15
–
ns 8)
Internal write to Read command delay
tWTR
1
–
tCK –
PRECHARGE command period
tRP
22.5
–
ns 8)
1) DQ, DM and DQS input slew rate is measured between VILD(DC) and VIHD(AC) (rising) or VIHD(DC) and VILD(AC) (falling).
2) DQ, DM and DQS input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal
transitions through the DC region must be monotonic.
3) Input slew rate ≥ 1.0 V/ns..
4) Input slew rate ≥ 0.5V/ns and < 1.0 V/ns.
5) This parameter guarantees device timing. It is verified by device characterization but are not subject to production test.
6) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
7) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
8) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period ; round to the next higher integer.
During WRITE bursts, the first valid data-in element is registered on the first rising edge of DQS following the
WRITE command, and subsequent data elements are registered on successive edges of DQS. The LOW state
on DQS between the WRITE command and the first rising edge is known as the write preamble; the LOW state
on DQS following the last data-in element is known as the write postamble. The time between the WRITE
command and the first corresponding rising edge of DQS (tDQSS) is specified with a relatively wide range (from
75% to 125% of a clock cycle). The diagrams in Figure 23 show the two extremes of tDQSS for a burst of 4. Upon
completion of a burst, assuming no other commands have been initiated, the DQs will remain High-Z and any
additional input data is ignored.
Data Sheet
29
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
CK
CK
Command
Address
WRITE
NOP
NOP
NOP
NOP
NOP
BA,Col b
tDQSSmin
DQS
DQ
Di b
DM
tDQSSmax
DQS
DQ
Di b
DM
DI b = Data In to column b.
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
Figure 23
= Don't Care
WRITE Burst (min. and max. tDQSS)
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either
case, a continuous flow of input data can be maintained. The new WRITE command can be issued on any clock
cycle following the previous WRITE command. The first data element from the new burst is applied after either the
last element of a completed burst or the last desired data element of a longer burst which is being truncated. The
new WRITE command should be issued x clock cycles after the first WRITE command, where x equals the number
of desired data element pairs (pairs are required by the 2n prefetch architecture).
Figure 24 shows concatenated WRITE bursts of 4.
Data Sheet
30
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
CK
CK
Command
Address
WRITE
NOP
WRITE
BA,Col b
NOP
NOP
NOP
BA,Col n
tDQSSmin
DQS
DQ
Di b
Di n
DM
tDQSSmax
DQS
DQ
Di b
Di n
DM
DI b (n) = Data In to column b (column n)
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank
Figure 24
= Don't Care
WRITE to WRITE (min. and max. tDQSS)
An example of non-consecutive WRITEs is shown in Figure 25.
CK
CK
Command
Address
WRITE
NOP
NOP
BA,Col b
WRITE
NOP
NOP
BA,Col n
tDQSSmax
DQS
DQ
Di b
Di n
DM
DI b (n) = Data In to column b (or column n).
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank and may be to the same or different devices.
Figure 25
Data Sheet
= Don't Care
Non-Consecutive WRITE to WRITE (max. tDQSS)
31
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Full-speed random WRITE accesses within a page or pages can be performed as shown in Figure 26.
CK
CK
Command
Address
WRITE
WRITE
WRITE
WRITE
WRITE
BA,Col b
BA,Col x
BA,Col n
BA,Col a
BA,Col g
NOP
tDQSSmax
DQS
DQ
Di b
Di b'
Di x
Di x'
Di n
Di n'
Di a
Di a'
DM
DI b etc. = Data In to column b, etc. .
= Don't Care
b', etc. = the next Data In following DI b, etc. according to the programmed burst order
Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4, 8 or 16, burst would be truncated.
Each WRITE command may be to any active bank and may be to the same or different devices.
Figure 26
Random WRITE Cycles (max. tDQSS)
2.4.7.1
WRITE to READ
Data for any WRITE burst may be followed by a subsequent READ command. To follow a WRITE without
truncating the WRITE burst, tWTR (WRITE to READ) should be met as shown in Figure 27.
CK
CK
Command
WRITE
Address
BA,Col b
NOP
NOP
NOP
READ
NOP
NOP
BA,Col n
tDQSSmax
tWTR
CL=3
DQS
DQ
Di b
DM
DI b = Data In to column b .
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
tWTR is referenced from the positive clock edge after the last Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
The READ and WRITE commands are to the same device but not necessarily to the same bank.
Figure 27
Data Sheet
= Don't Care
Non-Interrupting WRITE to READ (max. tDQSS)
32
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Data for any WRITE burst may be truncated by a subsequent READ command, as shown in Figure 28. Note that
only the data-in pairs that are registered prior to the tWTR period are written to the internal array, and any
subsequent data-in must be masked with DM, as shown in Figure 28.
CK
CK
Command
WRITE
Address
BA,Col b
NOP
NOP
READ
NOP
NOP
NOP
BA,Col n
tDQSSmax
tWTR
CL=3
DQS
DQ
Di b
DO n
DM
DI b = Data In to column b. DO n = Data Out from column n.
An interrupted burst of 4 is shown, 2 data elements are written.
3 subsequent elements of Data In are applied in the programmed order following DI b.
tWTR is referenced from the positive clock edge after the last Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
The READ and WRITE commands are to the same device but not necessarily to the same bank.
Figure 28
Interrupting WRITE to READ (Max. tDQSS)
2.4.7.2
WRITE to PRECHARGE
= Don't Care
Data for any WRITE burst may be followed by a subsequent PRECHARGE command. To follow a WRITE without
truncating the WRITE burst, tWR should be met as shown in Figure 29.
CK
CK
Command
Address
WRITE
NOP
NOP
NOP
NOP
PRE
BA a
(or all)
BA,Col b
tDQSSmax
tWR
DQS
DQ
Di b
DM
DI b = Data In to column b .
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
tWR is referenced from the positive clock edge after the last Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
Figure 29
= Don't Care
Non-Interrupting WRITE to PRECHARGE (Max. tDQSS)
Data for any WRITE burst may be truncated by a subsequent PRECHARGE command, as shown in Figure 30.
Note that only the data-in pairs that are registered prior to the tWR period are written to the internal array, and any
Data Sheet
33
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
subsequent data in should be masked with DM. Following the PRECHARGE command, a subsequent command
to the same bank cannot be issued until tRP is met.
In the case of a WRITE burst being executed to completion, a PRECHARGE command issued at the optimum
time (as described above) provides the same operation that would result from the same burst with Auto Precharge.
The disadvantage of the PRECHARGE command is that it requires that the command and address busses be
available at the appropriate time to issue the command. The advantage of the PRECHARGE command is that it
can be used to truncate bursts.
CK
CK
Command
Address
WRITE
NOP
NOP
NOP
tWR
*2
DQS
Di b
DM
*1
DI b = Data In to column b .
An interrupted burst of 4, 8 or 16 is shown, 2 data elements are written.
tWR is referenced from the positive clock edge after the last desired Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
*1 = can be Don't Care for programmed burst length of 4
*2 = for programmed burst length of 4, DQS becomes Don't Care at this point
Figure 30
Data Sheet
NOP
BA a
(or all)
BA,Col b
tDQSSmax
DQ
PRE
*1
*1
*1
= Don't Care
Interrupting WRITE to PRECHARGE (Max. tDQSS)
34
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.8
PRECHARGE
The PRECHARGE command is used to deactivate
(close) the open row in a particular bank or the open
rows in all banks. The bank(s) will be available for a
subsequent row access a specified time (tRP) after the
PRECHARGE command is issued. Input A10
determines whether one or all banks are to be
precharged, and in the case where only one bank is to
be precharged, inputs BA0, BA1 select the bank.
Otherwise BA0, BA1 are treated as “Don’t Care.”
CK
CK
CKE
(High)
CS
RAS
CAS
Once a bank has been precharged, it is in the idle state
and must be activated prior to any READ or WRITE
commands being issued to that bank. A PRECHARGE
command will be treated as a NOP if there is no open
row in that bank, or if the previously open row is already
in the process of precharging.
WE
A0-A9
A11,A12
All Banks
A10
One Bank
BA0,BA1
BA
= Don't Care
BA = Bank Address
(if A10 = L, otherwise Don't Care)
Figure 31
PRECHARGE Command
Table 13
Timing Parameters for PRECHARGE Command
Parameter
Symbol
ACTIVE to PRECHARGE command period
PRECHARGE command period
WRITE recovery time
tRAS
tRP
tWR
- 7.5
Unit Notes
Min. Max.
45
70,000 ns 1)
22.5
–
ns 1)
15
–
ns 1)
1) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period ; round to the next higher integer.
2.4.8.1
AUTO PRECHARGE
Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but
without requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction
with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or
WRITE command is automatically performed upon completion of the READ or WRITE burst. Auto Precharge is
nonpersistent in that it is either enabled or disabled for each individual READ or WRITE command.
Auto Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not
issue another command to the same bank until the precharge (tRP) is completed. This is determined as if an explicit
PRECHARGE command was issued at the earliest possible time, as described for each burst type.
Data Sheet
35
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.9
AUTO REFRESH and SELF REFRESH
The DDR Mobile-RAM requires a refresh of all rows in an rolling 64ms interval. Each refresh is generated in one
of two ways: by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode.
Dividing the number of rows into the rolling 64ms interval defines the average refresh interval, tREFI, which is a
guideline to controllers for distributed refresh timing.
2.4.9.1
AUTO REFRESH
Auto Refresh is used during normal operation of the
DDR Mobile-RAM. The command is nonpersistent, so
it must be issued each time a refresh is required. A
minimum time tRFC is required between two AUTO
REFRESH commands. The same rule applies to any
access command after the Auto Refresh operation. All
banks must be precharged prior to the AUTO
REFRESH command.
CK
CK
CKE
(High)
CS
RAS
The refresh addressing is generated by the internal
refresh controller. This makes the address bits “Don’t
Care” during an AUTO REFRESH command. The DDR
Mobile-RAM requires Auto Refresh cycles at an
average periodic interval of tREFI (max.).
CAS
WE
A0-A12
BA0,BA1
Partial array mode has no influence on Auto Refresh
mode.
= Don't Care
Figure 32
AUTO REFRESH Command
To allow for improved efficiency in scheduling and switching between tasks, some fexibility in the absolute refresh
interval is provided. A maximum of eight AUTO REFRESH commands can be posted to the DDR Mobile-RAM,
and the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH
command is 8 * tREFI.
CK
CK
Command
tRP
PRE
NOP
tRFC
ARF
NOP
NOP
DQ
ARF
NOP
NOP
ACT
Ba A,
Row n
Address
A10 (AP)
tRFC
Row n
Pre All
High-Z
= Don't Care
Ba A, Row n = Bank A, Row n
Figure 33
Auto Refresh
2.4.9.2
SELF REFRESH
The SELF REFRESH command can be used to retain data in the DDR Mobile-RAM, even if the rest of the system
is powered down. When in the Self Refresh mode, the DDR Mobile-RAM retains data without external clocking.
The DDR Mobile-RAM device has a built-in timer to accommodate Self Refresh operation. The SELF REFRESH
command is initiated like an AUTO REFRESH command except CKE is LOW. Input signals except CKE are “Don’t
Care” during Self Refresh. The user may halt the external clock one clock after Self Refresh entry is registered.
Data Sheet
36
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Once the command is registered, CKE must be held
low to keep the device in Self Refresh mode. The
device executes a minimum of one AUTO REFRESH
command internally once it enters Self Refresh mode.
The clock is internally disabled during Self Refresh
operation to save power. The minimum time that the
device must remain in Self Refresh mode is tRFC.
CK
CK
CKE
CS
RAS
The procedure for exiting Self Refresh requires a
sequence of commands. First, the clock must be stable
prior to CKE going back HIGH. Once Self Refresh Exit
is registered, a delay of at least tXS must be satisfied
before a valid command can be issued to the device to
allow for completion of any internal refresh in progress.
CAS
WE
A0-A12
BA0,BA1
The use of Self Refresh mode introduces the possibility
that an internally timed refresh event can be missed
when CKE is raised for exit from Self Refresh mode.
Upon exit from Self Refresh an extra AUTO REFRESH
command is recommended.
= Don't Care
Figure 34
SELF REFRESH Entry Command
CK
CK
tRP
> tRFC
tXSR
tRFC
CKE
Command
PRE
NOP
ARF
NOP
NOP
NOP
ARF
NOP
Ba A,
Row n
Address
A10 (AP)
DQ
ACT
Row n
Pre All
High-Z
Enter
Self Refresh
Mode
Exit from
Self Refresh
Mode
Any Command
(Auto Refresh
Recommended)
Figure 35
Self Refresh Entry and Exit
Table 14
Timing Parameters for AUTO REFRESH and SELF REFRESH Commands
Parameter
Symbol
AUTO REFRESH to ACTIVE/AUTO REFRESH command period
PRECHARGE command period
Self refresh exit to next valid command delay
Refresh period
Average periodic refresh interval (8192 rows)
tRFC
tRP
tXSR
tREF
tREFI
= Don't Care
- 7.5
Unit Notes
Min. Max.
75
–
ns 1)
22.5
–
ns 1)
120
–
ns 1)
–
64
ms –
–
7.8
µs 2)
1) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period ; round to the next higher integer.
2) A maximum of eight AUTOREFRESH commands can be posted to the DDR Mobile-RAM device, meaning that the
maximum absolute interval between any Refresh command and the next Refresh command is 8 * tREFI.
Data Sheet
37
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.10
POWER-DOWN
Power-down is entered when CKE is registered LOW
(no accesses can be in progress). If power-down
occurs when all banks are idle, this mode is referred to
as precharge power-down; if power-down occurs when
there is a row active in any bank, this mode is referred
to as active power-down. Entering power-down
deactivates the input and output buffers, excluding CK,
CK and CKE. In power-down mode, CKE LOW must be
maintained, and all other input signals are “Don’t Care”.
The minimum power-down duration is specified by tCKE.
However, power-down duration is limited by the refresh
requirements of the device.
CK
CK
CKE
CS
RAS
CAS
WE
A0-A12
BA0,BA1
The power-down state is synchronously exited when
CKE is registered HIGH (along with a NOP or
DESELECT command). A valid command may be
applied tXP after exit from power-down.
= Don't Care
Figure 36
Power-Down Entry Command
A minimum CKE high time of tCKE is required between two consecutive power-down states.
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123
123
123
123
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Figure 37
Power-Down Entry and Exit
Table 15
Timing Parameters for POWER-DOWN
Parameter
Symbol
Exit power down delay
CKE minimum high or low time
Data Sheet
'RQ
W&DUH
tXP
tCKE
38
- 7.5
Min.
tCK+ tIS
2
Unit Notes
Max.
–
–
ns
tCK
–
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.10.1
DEEP POWER-DOWN
Deep Power-Down mode is a unique feature of DDR Mobile-RAMs for extremely low power consumption. Deep
Power-Down mode is entered using the BURST TERMINATE command (cf Table 6) except that CKE is LOW. All
internal voltage generators are stopped and all memory data is lost in this mode. To enter the Deep Power-Down
mode all banks must be precharged.
The Deep Power-Down mode is asynchronously exited by asserting CKE HIGH. After the exit, the same command
sequence as for power-up initialization, including the 200µs intial pause, has to be applied before any other
command may be issued (cf. Figure 4).
2.4.11
CLOCK STOP
Stopping the clock during idle periods is a very effective method to reduce power consumption. The DDR MobileRAM supports clock stop in case:
•
•
•
the last access command (ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH or MODE REGISTER
SET) has executed to completion, including any data-out during read bursts; the number of clock pulses per
access command depends on the device’s AC timing parameters and the clock frequency (see Table 16);
the related timing condition (tRCD, tWR, tRP, tRFC, tMRD) has been met;
CKE is held HIGH.
When all conditions have been met, the device is either in “idle” or “row active” state (cf. Figure 4), and clock stop
mode may be entered with CK held LOW and CK held HIGH.
Clock stop mode is exited by restarting the clock. At least one NOP command has to be issued before the next
access command may be applied. Additional clock pulses might be required depending on the system
characteristics.
Figure 38 illustrates the clock stop mode:
•
•
•
•
•
initially the device is in clock stop mode;
the clock is restarted with the rising edge of T0 and a NOP on the command inputs;
with T1 a valid access command is latched; this command is followed by NOP commands in order to allow for
clock stop as soon as this access command has completed;
Tn is the last clock pulse required by the access command latched with T1
the timing condition of this access command is met with the completion of Tn; therefore Tn is the last clock
pulse required by this command and the clock is then stopped.
T0
CK
T1
T2
Tn
CK
CKE
Timing Condition
Command
Clock
Stopped
Figure 38
Data Sheet
NOP
CMD
Exit
Clock
Stop
Valid
Command
NOP
NOP
NOP
Enter
Clock
Stop
= Don't Care
Clock Stop
39
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Table 16
Minimum Number of Required Clock Pulses per Access Command
Command
ACTIVE
READ (Auto-Precharge Disabled)
READ (Auto-Precharge Enabled)
WRITE (Auto-Precharge Disabled)
WRITE (Auto-Precharge Enabled)
PRECHARGE
AUTO REFRESH
MODE REGISTER SET
Timing Condition
tRCD
(BL / 2) + CL
[(BL / 2) + tRP] ; [(BL / 2) + CL]
1 + (BL / 2) + tWR
1 + (BL / 2) + tDAL
tRP
tRFC
tMRD
- 7.5
3
5
5
5
8
3
10
2
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
Notes
1)
1)2)
1)2)3)
1)2)
1)2)
1)
1)
1) These parameters depend on the operating frequency; the number of clock cycles shown are calculated for a clock
frequency of 133 MHz for -7.5.
2) The values apply for a burst length of 4 and a CAS latency of 3.
3) Both timing conditions need to be satisfied; if not equal, the larger value applies
2.4.12
Clock Frequency Change
Depending on system considerations, it might be desired to change the DDR Mobile-RAM’s clock frequency while
the device is powered up. The DDR Mobile-RAM supports a clock frequency change when the device is in:
•
•
•
self refresh mode (see Figure 35);
power-down mode (see Figure 37);
clock stop mode (see Figure 38).
Once the clock runs stable at the new clock frequency, the timing conditions for exiting these states have to be
met before applying the next access command. It should be pointed out that a continuous frequency drift is not
considered a stable clock and therefore is not supported.
2.5
Function Truth Tables
Table 17
Truth Table - CKE
CKEn-1
L
L
H
H
1)
2)
3)
4)
5)
6)
CKEn
L
H
L
H
Current State
Command
Action
Notes
Power-Down
X
Maintain Power-Down
1)2)3)4)
Self Refresh
X
Maintain Self Refresh
1) to 4)
Deep Power-Down
X
Maintain Deep Power-Down
1) to 4)
Power-Down
DESELECT or NOP
Exit Power-Down
1) to 5)
Self Refresh
DESELECT or NOP
Exit Self Refresh
1) to 5)
Deep Power-Down
X
Exit Deep Power-Down
1) to 4), 6)
All Banks Idle
DESELECT or NOP
Enter Precharge Power-Down
1) to 4)
Bank(s) Active
DESELECT or NOP
Enter Active Power-Down
1) to 4)
All Banks Idle
AUTO REFRESH
Enter Self Refresh
1) to 4)
All Banks Idle
BURST TERMINATE
Enter Deep Power-Down
1) to 4)
1) to 4)
see Table 18 and Table 19
CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
Current state is the state immediately prior to clock edge n.
COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
All states and sequences not shown are illegal or reserved.
DESELECT or NOP commands should be issued on any clock edges occurring during tXP or tXSR period.
Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
Data Sheet
40
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Table 18
Current State Bank n - Command to Bank n
Current State
CS
RAS CAS WE Command / Action
Notes
H
X
X
X
DESELECT (NOP / continue previous operation)
1)2)3)4)5)6)
L
H
H
H
NO OPERATION (NOP / continue previous operation)
1) to 6)
L
L
H
H
ACTIVE (select and activate row)
1) to 6)
L
L
L
H
AUTO REFRESH
1) to 7)
L
L
L
L
MODE REGISTER SET
1) to 7)
L
H
L
H
READ (select column and start Read burst)
1) to 6), 8)
L
H
L
L
WRITE (select column and start Write burst)
1) to 6), 8)
L
L
H
L
PRECHARGE (Deactivate row in bank or banks)
1) to 6), 9)
Read
(AutoPrecharge
Disabled)
L
H
L
H
READ (truncate Read and start new Read burst)
1) to 6), 8)
L
H
L
L
WRITE (truncate Read and start new Write burst)
1) to 6), 8), 10)
L
L
H
L
PRECHARGE (truncate Read and start Precharge)
1) to 6), 9)
L
H
H
L
BURST TERMINATE
1) to 6), 11)
Write
(AutoPrecharge
L
H
L
H
READ (truncate Write and start Read burst)
1) to 6), 8), 12)
L
H
L
L
WRITE (truncate Write and start Write burst)
1) to 6), 8)
L
L
H
L
PRECHARGE (truncate Write burst, start Precharge)
1) to 6), 9),12)
Any
Idle
Row Active
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Table 17) and after tXP or tXSR has been met (if the
previous state was power-down or self refresh).
2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are
those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3) Current state definitions:
Idle:
The bank has been precharged, and tRP has been met.
Row Active:
A row in the bank has been activated, and tRCD has been met. No data bursts / accesses and no register
accesses are in progress.
Read:
A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
Write:
A WRITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
4) The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or
allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable
commands to the other bank are determined by its current state and according to Table 19.
Precharging:
Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the bank
is in the “idle” state.
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank
is in the “row active” state.
Read with AP
Enabled:
Starts with registration of a READ command with Auto Precharge enabled and ends when tRP has been
met. Once tRP is met, the bank is in the idle state.
Write with AP
Enabled:
Starts with registration of a WRITE command with Auto Precharge enabled and ends when tRP has been
met. Once tRP is met, the bank is in the idle state.
5) The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied
on each positive clock edge during these states.
Refreshing:
Starts with registration of an AUTO REFRESH command and ends when tRC is met. Once tRC is met, the
DDR Mobile-RAM is in the “all banks idle” state.
Accessing Mode
Register:
Starts with registration of a MODE REGISTER SET command and ends when tMRD has been met. Once
tMRD is met, the DDR Mobile-RAM is in the “all banks idle” state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met, all
banks are in the idle state.
Data Sheet
41
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
6) All states and sequences not shown are illegal or reserved.
7) Not bank-specific; requires that all banks are idle and no bursts are in progress.
8) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
or Writes with Auto Precharge disabled.
9) May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
10) A WRITE command may be applied after the completion of the Read burst; otherwise, a BURST TERMINATE command
must be used to end the Read burst prior to issuing a WRITE command.
11) Not bank-specific; BURST TERMINATE affects the most recent Read burst, regardless of bank.
12) Requires appropriate DM masking.
Table 19
Current State Bank n - Command to Bank m (different bank)
Current State
CS
RAS CAS WE Command / Action
Notes
H
X
X
X
DESELECT (NOP / continue previous operation)
1)2)3)4)5)6)
L
H
H
H
NO OPERATION (NOP / continue previous operation)
1) to 6)
Idle
X
X
X
X
Any command otherwise allowed to bank m
1) to 6)
Row Activating,
Active, or
Precharging
L
L
H
H
ACTIVE (select and activate row)
1) to 6)
L
H
L
H
READ (select column and start Read burst)
1) to 7)
L
H
L
L
WRITE (select column and start Write burst)
1) to 7)
L
L
H
L
PRECHARGE (Deactivate row in bank or banks)
1) to 6)
L
L
H
H
ACTIVE (select and activate row)
1) to 6)
L
H
L
H
READ (truncate Read and start new Read burst)
1) to 7)
L
H
L
L
WRITE (truncate Read and start Write burst)
1) to 8)
L
L
H
L
PRECHARGE (Deactivate row in bank or banks)
1) to 6)
L
L
H
H
ACTIVE (select and activate row)
1) to 6)
L
H
L
H
READ (truncate Write and start Read burst)
1) to 7), 9)
L
H
L
L
WRITE (truncate Write and start new Write burst)
1) to 7)
L
L
H
L
PRECHARGE (Deactivate row in bank or banks)
1) to 6)
L
L
H
H
ACTIVE (select and activate row)
1) to 6)
L
H
L
H
READ (truncate Read and start new Read burst)
1) to 7)
L
H
L
L
WRITE (truncate Read and start Write burst)
1) to 8)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
1) to 6)
L
L
H
H
ACTIVE (select and activate row)
1) to 6)
L
H
L
H
READ (truncate Write and start Read burst)
1) to 7)
L
H
L
L
WRITE (truncate Write and start new Write burst)
1) to 7)
Any
Read (AutoPrecharge
Disabled)
Write (AutoPrecharge
Disabled)
Read
(with AutoPrecharge)
Write
(with AutoPrecharge)
1) to 6)
PRECHARGE (Deactivate row in bank or banks)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Table 17) and after tXP or tXSR has been met (if the
L
L
H
L
previous state was power-down or self refresh).
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is
allowable). Exceptions are covered in the notes below.
Data Sheet
42
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
3) Current state definitions:
Idle:
The bank has been precharged, and tRP has been met.
Row Active:
A row in the bank has been activated, and tRCD has been met. No data bursts / accesses and no register
accesses are in progress.
Read:
A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
Write:
A WRITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
Read with AP
Enabled:
see following text.
Write with AP
Enabled:
see following text.
3a. The Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states can each be broken into two
parts: the access period and the precharge period. For Read with Auto Precharge, the precharge period is defined as
if the same burst was executed with Auto Precharge disabled and then followed with the earliest possible
PRECHARGE command that still accesses all of the data in the burst. For Write with Auto Precharge, the precharge
period begins when tWR ends, with tWR measured as if Auto Precharge was disabled. The access period starts with
registration of the command and ends where the precharge period (or tRP) begins. During the precharge period of the
Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states, ACTIVE, PRECHARGE, READ and
WRITE commands to the other bank may be applied; during the access period, only ACTIVE and PRECHARGE
commands to the other bank may be applied. In either case, all other related limitations apply (e.g. contention
between READ data and WRITE data must be avoided).
4) AUTO REFRESH, SELF REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.
5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state
only.
6) All states and sequences not shown are illegal or reserved.
7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
or Writes with Auto Precharge disabled.
8) A WRITE command may be applied after the completion of the Read burst; otherwise, a BURST TERMINATE command
must be used to end the Read burst prior to issuing a WRITE command.
9) Requires appropriate DM masking.
Data Sheet
43
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Table 20
Absolute Maximum Ratings
Parameter
Symbol
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Commercial
Storage Temperature
Power Dissipation
Short Circuit Output Current
Values
VDD
VDDQ
VIN
VOUT
TC
TSTG
PD
IOUT
Unit
Min.
Max.
-0.3
2.7
V
-0.3
2.7
V
-0.3
V
-0.3
VDDQ + 0.3
VDDQ + 0.3
0
+70
°C
-55
+150
°C
–
0.7
W
–
50
mA
V
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 21
Pin Capacitances1)2)3)
Parameter
Input capacitance: CK, CK
Delta input capacitance: CK, CK
Input capacitance: all other input-only pins
Delta input capacitance: all other input-only pins
Input/output capacitance: DQ, DQS, DM
Delta input/output capacitance: DQ, DQS, DM
Symbol
CI1
CDI1
CI2
CDI2
CIO
CDIO
Values
Unit
Min.
Max.
1.5
2.5
pF
–
0.25
pF
1.5
2.5
pF
–
0.5
pF
3.5
4.5
pF
–
0.5
pF
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer.
VDD, VDDQ are applied and all other pins (except the pin under test) are floating. DQ’s should be in high impedance state.
This may be achieved by pulling CKE to low level.
3) Although DM is an input-only pin, it’s input capacitance models the input capacitance of the DQ and DQS pins.
Data Sheet
44
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
Table 22
Electrical Characteristics1)2)
Parameter
Symbol
Values
VDD
VDDQ
IIL
IOL
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input leakage current
Output leakage current
Unit Notes
Min.
Max.
1.70
1.90
V
–
1.70
1.90
V
–
-1.0
1.0
µA
–
-1.5
1.5
µA
–
Address and Command Inputs (BA0, BA1, A0 - A12, CKE, CS, RAS, CAS, WE)
VIH
VIL
0.8 × VDDQ
VDDQ + 0.3
0.2 × VDDQ
V
–
-0.3
V
–
VIN
-0.3
VDDQ + 0.3
V
–
VID(DC)
VID(AC)
VIX
0.4 × VDDQ
V
3)
V
3)
0.4 × VDDQ
VDDQ + 0.6
VDDQ + 0.6
0.6 × VDDQ
V
4)
VIHD(DC)
VILD(DC)
VIHD(AC)
VILD(AC)
0.7 × VDDQ
VDDQ + 0.3
V
–
-0.3
0.3 x VDDQ
V
–
0.8 × VDDQ
V
–
-0.3
VDDQ + 0.3
0.2 × VDDQ
V
–
VOH
VOL
0.9 × VDDQ
–
V
–
0.1 × VDDQ
V
–
Input high voltage
Input low voltage
Clock Inputs (CK, CK)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential cross point voltage
0.6 × VDDQ
Data Inputs (DQ0 - DQ15, LDM, UDM, LDQS, UDQS)
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data Outputs (DQ0 - DQ15, LDQS, UDQS)
Output high voltage
Output low voltage
1) 0 °C ≤ TC ≤ 70 °C (comm.);
All voltages referenced to VSS. VSS and VSSQ must be at same potential.
–
2) See Table 25 and Figure 39 for overshoot and undershoot definition.
3) VID is the magnitude of the difference between the input level on CK and the input level on CK.
4) The value of VIX is expected to be equal to 0.5 x VDDQ and must track variations in the DC level.
Data Sheet
45
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
3.2
AC Characteristics
Table 23
AC Characteristics1)2)3)4)
Parameter
DQ output access time from CK/CK
DQS output access time from CK/CK
Clock high-level width
Clock low-level width
Clock half period
Clock cycle time
DQ and DM input setup time
DQ and DM input hold time
DQ and DM input pulse width
Address and control input setup time
Address and control input hold time
Address and control input pulse width
DQ & DQS low-impedance time from CK/CK
DQ & DQS high-impedance time from CK/CK
DQS - DQ skew
DQ / DQS output hold time from DQS
Data hold skew factor
Write command to 1st DQS latching transition
DQS input high-level width
DQS input low-level width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
MODE REGISTER SET command period
Write preamble setup time
Write postamble
Write preamble
Read preamble
Symbol
tAC
CL = 3
CL = 2
fast slew rate
slow slew rate
fast slew rate
slow slew rate
fast slew rate
slow slew rate
fast slew rate
slow slew rate
tDS
tDH
tDIPW
tIS
tIH
tIPW
tLZ
tHZ
tDQSQ
tQH
tQHS
tDQSS
tDQSH
tDQSL
tDSS
tDSH
tMRD
tWPRES
tWPST
tWPRE
tRPRE
CL = 3
CL = 2
Read postamble
ACTIVE to PRECHARGE command period
ACTIVE to ACTIVE command period
AUTO REFRESH to ACTIVE/AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
ACTIVE bank A to ACTIVE bank B delay
WRITE recovery time
Auto precharge write recovery + precharge time
Data Sheet
tDQSCK
tCH
tCL
tHP
tCK
46
tRPST
tRAS
tRC
tRFC
tRCD
tRP
tRRD
tWR
tDAL
- 7.5
Unit Notes
Min.
Max.
2.0
6.5
ns 5)6)
2.0
6.5
ns 5)6)
0.45
0.55
tCK –
0.45
0.55
tCK –
min(tCL,tCH)
ns 7)8)
7.5
–
ns 9)
15
–
0.75
–
ns 10)11)12)
10)11)13)
0.85
–
0.75
–
ns 10)11)12)
10)11)13)
0.85
–
1.7
–
ns 14)
1.3
–
ns 12)15)16)
13)15)16)
1.5
–
1.3
–
ns 12)15)16)
13)15)16)
1.5
–
3.0
–
ns 14)
1.0
–
ns 17)
–
6.5
ns 17)
–
0.6
ns 18)
tHP-tQHS
–
ns 8)
–
0.75
ns 8)
0.75
1.25
tCK –
0.4
0.6
tCK –
0.4
0.6
tCK –
0.2
–
tCK –
0.2
–
tCK –
2
–
tCK –
0
–
ns 19)
0.4
0.6
tCK 20)
0.25
–
tCK –
0.9
1.1
tCK 21)
0.7
1.1
0.4
0.6
tCK –
45
70,000
ns 22)
65
–
ns 22)
75
–
ns 22)
22.5
–
ns 22)
22.5
–
ns 22)
15
–
ns 22)
15
–
ns 22)
tCK 23)
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
Table 23
AC Characteristics1)2)3)4) (cont’d)
Parameter
Symbol
- 7.5
Min.
Max.
1
–
Internal write to Read command delay
tWTR
Self refresh exit to next valid command delay
tXSR
120
–
Exit power down delay
tXP
tCK+ tIS
–
CKE minimum high or low time
tCKE
2
–
Refresh period
tREF
–
64
Average periodic refresh interval (8192 rows)
tREFI
–
7.8
1) 0 °C ≤ TC ≤ 70 °C (comm.); VDD = VDDQ = 1.70 V - 1.90 V. All voltages referenced to VSS.
Unit Notes
tCK –
ns 22)
ns
tCK –
ms –
µs 24)
2) All parameters assume proper device initialization.
3) The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input reference
level for signals other than CK/CK is VDDQ/2.
4) All AC timing characteristics assume an input slew rate of 1.0 V/ns.
5) The output timing reference level is VDDQ/2.
6) Parameters tac and tDQSCK are specified for full drive strength and a reference load as shown below. This circuit is not
intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented
by a production tester. For half drive strength with a nominal load of 10pF parameters tAC and tDQSCK are expected to be in
the same range. However, these parameters are not subject to production test but are estimated by device characterization.
Use of IBIS or other simulation tools for system validation is suggested.
I/O
Z0 = 50 Ohms
20 pF
7) Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e.
this value can be greater than the minimum specification limits for tCL and tCH).
8) tQH = tHP - tQHS, where tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCL,
tCH). tQHS accounts for 1) the pulse duration distortion of on-chip clock circuits; and 2) the worst case push-out of DQS on
one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin
skew and output pattern effects, and p-channel to n-channel variation of the output drivers.
9) The only time that the clock frequency is allowed to change is during power-down, self-refresh or clock stop modes.
10) DQ, DM and DQS input slew rate is measured between VILD(DC) and VIHD(AC) (rising) or VIHD(DC) and VILD(AC) (falling).
11) DQ, DM and DQS input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal
transitions through the DC region must be monotonic.
12) Input slew rate ≥ 1.0 V/ns..
13) Input slew rate ≥ 0.5V/ns and < 1.0 V/ns.
14) These parameters guarantee device timing. They are verified by device characterization but are not subject to production
test.
15) The transition time for address and command inputs is measured between VIH and VIL.
16) A CK/CK differential slew rate of 2.0 V/ns is assumed for this parameter.
17) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
18) tDQSQ consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for
any given cycle.
19) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
20) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
Data Sheet
47
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
21) A low level on DQS may be maintained during High-Z states (DQS drivers disabled) by adding a weak pull-down element
in the system. It is recommended to turn off the weak pull-down element during read and write bursts (DQS drivers
enabled).
22) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
no. of clock cycles = specified delay / clock period ; round to the next higher integer.
23) tDAL = (tWR / tCK) + (tRP / tCK): for each of the terms above, if not already an integer, round to the next higher integer.
24) A maximum of eight AUTOREFRESH commands can be posted to the DDR Mobile-RAM device, meaning that the
maximum absolute interval between any Refresh command and the next Refresh command is 8 * tREFI.
Table 24
Output Slew Rate Characteristics 1)
Parameter
Typical Range
Minimum
Maximum
Unit
Notes
Pullup and Pulldown Slew Rate
(Full Drive Buffer)
TBD
0.7
2.5
V/ns
2)
Pullup and Pulldown Slew Rate
(Half Drive Buffer)
TBD
0.3
1.0
V/ns
2)
-
0.7
1.4
-
3)
Output Slew Rate Matching Ratio
(Pullup to Pulldown)
1) Output slew rate is measured between VILD(DC) and VIHD(AC) (rising) or VIHD(DC) and VILD(AC) (falling).
2) The parameter is measured using a 20pF capacitive load connected to VSSQ.
3) The ratio of the pullup slew rate to the pulldown slew rate is specified for the same temperature and voltage, over the entire
temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown
drivers due to process variation.
Table 25
AC Overshoot / Undershoot Specification
Parameter
Maximum
Unit
Notes
Maximum peak amplitude allowed for overshoot
0.9
V
–
Maximum peak amplitude allowed for undershoot
0.9
V
–
Maximum overshoot area above VDD
3.0
V-ns
–
Maximum undershoot area below VSS
3.0
V-ns
–
3.0
Overshoot
2.5
2.0
VDD
Voltage (V)
1.5
1.0
Max. Amplitude = 0.9V
Max. Area = 3V-ns
0.5
VSS
0
-0.5
Undershoot
-1.0
-1.5
0
1
2
3
4
5
6
7
time (ns)
Figure 39
Data Sheet
AC Overshoot and Undershoot Definition
48
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
3.3
Operating Currents
Table 26
Maximum Operating Currents1)2)3)4)5)
Parameter & Test Conditions
Symbol Value Unit
- 7.5
Operating one bank active-precharge current:
IDD0
50
mA
IDD2P
2.2
mA
IDD2PS
2.1
mA
IDD2N
15
mA
IDD2NS
2.6
mA
IDD3P
2.3
mA
IDD3PS
2.2
mA
IDD3N
22
mA
IDD3NS
2.7
mA
IDD4R
75
mA
IDD4W
75
mA
IDD5
135
mA
IDD6
2
mA
IDD8
506)
µA
tRC = tRCmin; tCK = tCKmin; CKE is HIGH; CS is HIGH between valid commands; address inputs are
SWITCHING; data bus inputs are STABLE
Precharge power-down standby current:
all banks idle, CKE is LOW; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING;
data bus inputs are STABLE
Precharge power-down standby current with clock stop:
all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are
SWITCHING; data bus inputs are STABLE
Precharge non power-down standby current:
all banks idle, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING;
data bus inputs are STABLE
Precharge non power-down standby current with clock stop:
all banks idle, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are
SWITCHING; data bus inputs are STABLE
Active power-down standby current:
one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin; address and control inputs are
SWITCHING; data bus inputs are STABLE
Active power-down standby current with clock stop:
one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs
are SWITCHING; data bus inputs are STABLE
Active non power-down standby current:
one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are
SWITCHING; data bus inputs are STABLE
Active non power-down standby current with clock stop:
one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs
are SWITCHING; data bus inputs are STABLE
Operating burst read current:
one bank active; BL = 4; CL = 3; tCK = tCKmin; continuous read bursts;
IOUT = 0 mA; address inputs are SWITCHING; 50% data change each burst transfer
Operating burst write current:
one bank active; BL = 4; tCK = tCKmin; continuous write bursts;
address inputs are SWITCHING; 50% data change each burst transfer
Auto-Refresh current:
tRC = tRFCmin; tCK = tCKmin; burst refresh; CKE is HIGH; address and control inputs are SWITCHING;
data bus inputs are STABLE
Self refresh current:
CKE is LOW; CK = LOW, CK = HIGH; address and control inputs are STABLE; data bus inputs
are STABLE
Deep Power Down current
1) 0 °C ≤ TC ≤ 70 °C (comm.); VDD = VDDQ = 1.70 V - 1.90 V.
Recommended Operating Conditions unless otherwise noted
2) IDD specifications are tested after the device is properly intialized and measured at 133 MHz for -7.5 speed grade.
3) Input slew rate is 1.0 V/ns.
Data Sheet
49
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
4) Definitions for IDD:
LOW is defined as VIN ≤ 0.1 * VDDQ ;
HIGH is defined as VIN ≥ 0.9 * VDDQ ;
STABLE is defined as inputs stable at a HIGH or LOW level;
SWITCHING is defined as:
- address and command: inputs changing between HIGH and LOW once per two clock cycles;
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE
5) All parameters are measured with no output loads.
6) IDD8 current is typical.
Data Sheet
50
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Package Outlines
4
Package Outlines
Figure 40
P-VFBGA-60-1 (Plastic Very Thin Fine Ball Grid Array Package)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
51
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3
Data Sheet
Edition 2006-11
Published by Qimonda AG
Gustav-Heinemann-Ring 212
D-81739 München, Germany
© Qimonda AG 2006.
All Rights Reserved.
Legal Disclaimer
The information given in this Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Qimonda Office.
Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a
failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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