BC846 BC847 BC848 NPN Silicon Planar Epitaxial Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) SYMBOL BC846 BC847 BC848 UNITS VCBO 80 50 30 V VCES 80 50 30 V Collector Emitter Voltage VCEO 65 45 30 V Emitter Base Voltage VEBO 6 6 5 V Collector Current (DC) IC 100 Collector Current - Peak ICM 200 Emitter Current - Peak -IEM 200 mA Base Current - Peak IBM 200 mA Total power dissipation up to Tamb = 25 oC Ptot** 250 mW Storge Temperature Tstg -55 to +150 o Tj 150 o Rth(j-a)** 500 Junction Temperature Thermal Resistance From junction to ambient mA C C K/W **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm www.rectron.com 1 of 2 BC846 BC847 BC848 o Electrical Characteristics (at Ta=25 C unless otherwise specified) DESCRIPTION Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VBE(on)* VCE(Sat) VBE(Sat)*** hFE 15 UNITS nA 4 uA MIN TYP MAX VCB = 30V, IE = 0 o VCB = 30V, IE = 0, Tj = 150 C IC = 2mA, VCE = 5V 0.58 0.7 IC = 10mA, VCE = 5V 0.77 IC = 10mA, IB = 0.5mA 0.25 IC = 100mA, IB = 5mA 0.60 IC = 10mA, IB = 0.5mA 0.7 IC = 100mA, IB = 5mA 0.9 V V V IC = 10uA, VCE = 5V BC846A/BC847A/BC848A 90 BC846B/BC847B/BC848B 150 BC847C/BC848C 270 IC = 2mA, VCE = 5V Collector Capacitance Transition Frequency Small Signal Current Gain Noise Figure CC fT | hfe | NF BC846 110 450 BC847/BC848 110 800 BC846A/BC847A/BC848A 110 220 BC846B/BC847B/BC848B 200 450 BC847C/BC848C 420 IE = ie = 0, VCB = 10V, f = 1MHZ IC = 10mA, VCB = 5V, f = 100MHZ 800 pF MHZ 2.5 100 IC = 2mA, VCE = 5V, f= 1kHZ BC856 125 500 BC857/BC858 125 900 BC846A/BC847A/BC848A 125 260 BC846B/BC847B/BC848B 240 500 BC847C/BC848C 450 900 IC = 0.2mA, VCE = 5V 10 dB RS= 2k ohm, f = 1KHZ, B= 200HZ *VBE (on) decreases by about 2mV/K with increase temperature. ***VBE (Sat) decreases by about 1.7mV/K with increase temperature. www.rectron.com 2 of 2