BC817 TECHNICAL SPECIFICATION NPN Silicon Planar Epitaxial Transistor 1 2 3 Dimensions SOT-23 BASE EMITTER COLLECTOR Absolute Maximun Ratings (Ta=25oC unless specified otherwise) Desription Collector-Emitter Voltage (V BE = 0V) Collector Emitter Voltage (open base) IC = 10mA Emitter Base Voltage Collector Current (DC) Collector Current - Peak SYMBOL VALUE UNITS VCES 50 V VCEO 45 V VEBO 5 V IC 500 mA ICM 1000 mA (-IEM ) 1000 mA Base Current - (DC) IB 100 mA Base Current - Peak IBM 200 mA Emitter Current - Peak Total Power Dissipation up to Tamb = 25 °C Ptot 250 mW Storage Temperature Tstg (-55 to +150) °C Junction Temperature TJ 150 °C Rth(j-a) 500 k/W Thermal Resistance From junction to ambient Electical Characteristics (at Ta = 25°C unless otherwise specified) Symbol Test Conditions Typ. Unit VCB = 20V, IE = 0, TJ = 150°C < < 100 5 nA µA VCB = 20V, IE = 0, TJ = 25°C Collector Cut off Current ICBO Emitter cut-off current IEBO IC = 0, VEB = 5V < 10 µA Base Emitter on Voltage VBE IC = 500 mA, VCE = 1V < 1, 2V V VCEsat IC = 500 mA, IB = 50mA < 700 mV IC = 500 mA, VCE = 1V > - 40 100 to 600 Saturation Voltage DC Current Gain hFE Collector Capacitance CC IE = IE = 0, VCB = 10V, f = 1MHz typ. 5 pF Transition Frequency fT IC = 10mA, VCE = 5V, f =100MHz > 100 MHz IC = 100 mA, VCE = 1V