BZM55C2V4 -BZM55C47 SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 2.4 to 47 Volts POWER RATING 500 mWatts FEATURES * Saving space * Hermetic sealed parts * Electrical data identical with the devices BZT55 Series / TZM Series * Fits onto SOD323/SOD110footprints * Very sharp reverse characteristic * Very high stability * Low noise * Available with tighter tolerances * Low reverse current level * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC .049 (1.25) .047 (1.20) Micro-MELF MECHANICAL DATA * Case: MicroMELF * Weight: approx. 12mg .010 (0.25) .006 (0.15) < .0 61 (1 .5 6) .079 (2.00) .071 (1.80) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. <.043 ( 1.10) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) RATINGS SYMBOL VALUE UNITS PV 500 mW Terminal resistance (Mounted on epoxy-glass hard tissue,Fig.1) RqJA 500 K/W Terminal resistance (35um copper clad,0.9mm2 copper area per electrode) RqJL 300 K/W TJ 175 o C -65 to +175 o C Power Dissipation @RqJA<300 K/W Max. Operating Temperature Range Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Forward Voltage at IF= 200mA SYMBOL MIN. TYP. MAX. UNITS VF - - 1.5 Volts 2007-3 ELECTRICAL CHARACTERISTICS Zener Voltage Range1) rzjT at IZT, f = 1kHz VZ at IZT Partnumber Dynamic Resistance rzjK at IZK, f = 1kHz V (@TA=25 C unless otherwise specified) O Test Current Temperature Coefficient IZT TKVZ mA Test Current Reverse Leakage Current %/K min IZK IR IR at Tamb at Tamb = 25 °C = 150 °C at VR mA µA V min max max BZM55C2V4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1 BZM55C2V7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 BZM55C3V0 2.8 3.2 < 90 < 600 5 - 0.08 - 0.05 1 <4 < 40 1 BZM55C3V3 3.1 3.5 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZM55C3V6 3.4 3.8 < 90 < 600 5 -0.08 - 0.05 1 <2 < 40 1 BZM55C3V9 3.7 4.1 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZM55C4V3 4 4.6 < 90 < 600 5 - 0.06 - 0.03 1 <1 < 20 1 BZM55C4V7 4.4 5 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 BZM55C5V1 4.8 5.4 < 60 < 550 5 - 0.02 0.02 1 < 0.1 <2 1 BZM55C5V6 5.2 6 < 40 < 450 5 - 0.05 0.05 1 < 0.1 <2 1 BZM55C6V2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2 BZM55C6V8 6.4 7.2 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3 BZM55C7V5 7 7.9 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5 BZM55C8V2 7.7 8.7 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2 BZM55C9V1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8 BZM55C10 * 9.4 10.6 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5 BZM55C11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2 BZM55C12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1 BZM55C13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10 BZM55C15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11 BZM55C16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12 BZM55C18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13 BZM55C20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15 BZM55C22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16 BZM55C24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18 BZM55C27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20 BZM55C30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22 BZM55C33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24 BZM55C36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27 BZM55C39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 <5 30 BZM55C43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33 BZM55C47 * 44 50 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36 1) tp < 10 ms, T/t p > 1000 *) Additionnal measurement of Voltage group 9V1 to 47 at 95 % Vzmin <35 nA at T j 25 °C 200 600 500 CD, Diode Capacitance (pF) Ptot, TOTAL POWER DISSIPATION (mW) RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 ) 400 300 200 100 0 0 100 VR=2V TJ=25OC 150 100 50 0 200 0 5 O TA, AMBIENT TEMPERATURE( C) Figure1 Total Power Dissipation vs. Ambient Temperature VZtn,REVERSE VOLTAGE CHANGE (pF) IZ=5mA 10 0 TKVZ, TEMPERATURE COEFFICIENT OF VZ (10-4/K) TJ=25OC 100 0 5 10 15 20 15 20 25 Figure2 Diode Capacitance vs. Zener Voltage 25 1.3 VZtn =VZt/VZ (25OC) 1.2 TKVZ =10 X 10-4/K 8 6 4 2 X 10-4/K X 10-4/K X 10-4/K X 10-4/K 0 -2 X 10-4/K -4 X 10-4/K 1.1 1.0 0.9 0.8 -60 0 60 120 180 240 VZ, ZENER VOLTAGE(V) Tj, JUNCTION TEMPERATURE (OC) Figure3 Typical Change of Working Voltage under Operating Conditions at TA=25OC Figure4 Typical Change of Working Voltage vs. Junction Temperature 15 100 IF, FORWARD CURRENT (mA) VZ, VOLTAGE CHANGE (mV) 1000 10 VZ, ZENER VOLTAGE(V) 10 5 IZ=5mA 0 -5 0 10 20 30 VZ, ZENER VOLTAGE(V) 40 Figure5 Temperature Coefficient of VZ vs. Zener Voltage 50 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) Figure6 Forward Current vs. Forward Voltage RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 ) 50 Ptot=500mW 80 IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) 100 TA=25OC 60 40 20 0 4 6 8 12 30 20 10 0 20 TA=25OC 15 20 25 30 35 VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure7 Zener Current vs. Zener Voltage Figure8 Zener Current vs. Zener Voltage RZ, DIFFERENTIAL ZENER RESISTANCE (W) 0 Ptot=500mW 40 1000 IZ=1mA 100 5mA 10 10mA 1 TJ=25OC 0 5 10 15 20 25 VZ, ZENER VOLTAGE (V) Zthp, Thermal Resistance for Pulse Cond (K/W) Figure9 Differential Zener Resistance vs. Zener Voltage 1000 tP/T = 0.5 100 RqJA = 300K/W tP/T = 0.2 T=Tjmax.- TA Single Pulse 10 tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 2 tP/T = 0.05 1 10-1 iZM = (-VZ+(VZ +4rzj X T/Zthp) 100 101 tp, PULSE LENGTH (mS) Figure10 Thermal Response 102 1/2 ) / (2rzj) 103 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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