BZM55-Series Vishay Semiconductors Small Signal Zener Diodes Features • Saving space • Hermetic sealed parts • Electrical data identical with the devices BZT55..Series/TZM..Series • Fits onto SOD-323/SOD-110 footprints • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 9612315 Mechanical Data Case: MicroMELF Weight: approx. 12 mg Packaging codes/options: TR/2.5 k per 7" reel, 12.5 k/box TR3/10 k per 13" reel, 10 k/box Applications • Voltage stabilization Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA ≤ 300 K/W PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 °C Tstg - 65 to + 175 °C Power dissipation Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Junction to ambient air Mounted on epoxy-glass hard tissue, fig. 1 RthJA 500 K/W Junction tie point 35 µm copper clad, 0.9 mm2 copper area per electrode RthJL 300 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85597 Rev. 2.0, 26-Aug-10 Test condition Symbol IF = 200 mA VF Min. Typ. For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Max. Unit 1.5 V www.vishay.com 1 BZM55-Series Vishay Semiconductors Electrical Characteristics BZM55C.. Zener voltage range 1) rzjT at IZT, f = 1kHz VZ at IZT Part number Dynamic resistance rzjK at IZK, f = 1kHz Ω V Test current Temperature coefficient Test current IZT TKVZ IZK IR IR at Tamb at Tamb = 25 °C = 150 °C at VR mA µA V mA %/K min. Reverse leakage current min. max. max. BZM55C2V4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1 BZM55C2V7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 BZM55C3V0 2.8 3.2 < 90 < 600 5 - 0.08 - 0.05 1 <4 < 40 1 BZM55C3V3 3.1 3.5 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZM55C3V6 3.4 3.8 < 90 < 600 5 -0.08 - 0.05 1 <2 < 40 1 BZM55C3V9 3.7 4.1 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZM55C4V3 4 4.6 < 90 < 600 5 - 0.06 - 0.03 1 <1 < 20 1 BZM55C4V7 4.4 5 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 BZM55C5V1 4.8 5.4 < 60 < 550 5 - 0.02 0.02 1 < 0.1 <2 1 BZM55C5V6 5.2 6 < 40 < 450 5 - 0.05 0.05 1 < 0.1 <2 1 BZM55C6V2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2 BZM55C6V8 6.4 7.2 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3 BZM55C7V5 7 7.9 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5 BZM55C8V2 7.7 8.7 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2 BZM55C9V1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8 BZM55C10 * 9.4 0.6 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5 BZM55C11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2 BZM55C12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1 BZM55C13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10 BZM55C15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11 BZM55C16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12 BZM55C18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13 BZM55C20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15 BZM55C22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16 BZM55C24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18 BZM55C27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20 BZM55C30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22 BZM55C33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24 BZM55C36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27 BZM55C39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 <5 30 BZM55C43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33 BZM55C47 * 44 50 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36 BZM55C51 * 48 54 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 BZM55C56 * 52 60 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 BZM55C62 * 58 66 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 BZM55C68 * 64 72 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 BZM55C75 * 70 79 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56 Notes: 1) t ≤ 10 ms, T/t > 1000 p p *) Additionnal measurement of voltage group 9V1 to 75 % at 95 % Vzmin. ≤ 35 nA at Tj 25 °C www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85597 Rev. 2.0, 26-Aug-10 [email protected], [email protected], [email protected] BZM55-Series Vishay Semiconductors Electrical Characteristics BZM55B.. Zener voltage range 1) VZ at IZT Part number Dynamic resistance rzjT at IZT, f = 1kHz rzjK at IZK, f = 1kHz Ω V Test current Temperature coefficient Test current IZT TKVZ IZK mA min. max. BZM55B2V4 2.35 2.45 < 85 < 600 BZM55B2V7 2.64 2.76 < 85 < 600 BZM55B3V0 2.94 3.06 < 90 BZM55B3V3 3.24 3.36 < 90 BZM55B3V6 3.52 3.68 BZM55B3V9 3.82 BZM55B4V3 %/K Reverse leakage current IR at Tamb = 25 °C mA IR at Tamb = 150 °C µA at VR V min. max. 5 - 0.09 - 0.06 1 < 50 < 100 1 5 - 0.09 - 0.06 1 < 10 < 50 1 < 600 5 - 0.08 - 0.05 1 <4 < 40 1 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 3.98 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 4.22 4.38 < 90 < 600 5 - 0.06 - 0.03 1 <1 < 20 1 BZM55B4V7 4.6 4.80 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 BZM55B5V1 5 5.20 < 60 < 550 5 - 0.02 0.02 1 < 0.1 <2 1 BZM55B5V6 5.48 5.72 < 40 < 450 5 - 0.05 0.05 1 < 0.1 <2 1 BZM55B6V2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2 BZM55B6V8 6.66 6.94 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3 BZM55B7V5 7.35 7.65 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5 BZM55B8V2 8.04 8.36 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2 BZM55B9V1 * 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8 BZM55B10 * 9.8 10.20 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5 BZM55B11 * 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2 BZM55B12 * 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1 BZM55B13 * 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10 BZM55B15 * 14.7 15.30 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11 BZM55B16 * 15.7 16.30 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12 BZM55B18 * 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13 BZM55B20 * 19.6 20.40 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15 BZM55B22 * 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16 BZM55B24 * 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18 BZM55B27 * 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20 BZM55B30 * 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22 BZM55B33 * 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24 BZM55B36 * 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27 BZM55B39 * 38.2 39.8 < 90 < 500 2.5 0.04 0.12 1 < 0.1 <5 30 BZM55B43 * 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33 BZM55B47 * 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36 BZM55B51 * 50 52.0 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 BZM55B56 * 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 BZM55B62 * 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 BZM55B68 * 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 BZM55B75 * 73.5 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56 Notes: 1) t ≤ 10 ms, T/t > 1000 p p *) Additionnal measurement of voltage group 9V1 to 75 % at 95 % Vzmin. ≤ 35 nA at Tj 25 °C Document Number 85597 Rev. 2.0, 26-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BZM55-Series Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 200 CD - Diode Capacitance (pF) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 95 9602 80 120 160 200 40 Tamb - Ambient Temperature (°C) 50 0 VZtn - Relative Voltage Change Tj = 25 °C IZ = 5 mA 10 15 25 20 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 0 1.0 - 2 x 10-4/K - 4 x 10-4/K 0.9 0.8 1 0 5 10 15 20 - 60 25 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 0 60 120 180 240 Tj - Junction Temperature (°C) 95 9599 VZ - Z-Voltage (V) 95 9598 Figure 5. Typical Change of Working Voltage vs. Junction Temperature 15 IF - Forward Current (mA) 100 10 5 IZ = 5 mA 0 10 Tj = 25 °C 1 0.1 0.01 0.001 -5 0 10 20 30 40 0 50 VZ - Z-Voltage (V) Figure 3. Temperature Coefficient of Vz vs. Z-Voltage www.vishay.com 10 VZ - Z-Voltage (V) 1.3 100 95 9600 5 Figure 4. Diode Capacitance vs. Z-Voltage 1000 VZ - Voltage Change (mV) 100 95 9601 Figure 1. Total Power Dissipation vs. Ambient Temperature TKVZ - Temperature Coefficient of VZ (10-4/K) VR = 2 V Tj = 25 °C 0 0 4 150 95 9605 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage For technical questions within your region, please contact one of the following: Document Number 85597 Rev. 2.0, 26-Aug-10 [email protected], [email protected], [email protected] BZM55-Series Vishay Semiconductors 100 0.71 1.27 60 9.9 0.152 Ptot = 500 mW Tamb = 25 °C 0.355 25 40 10 IZ - Z-Current (mA) 80 1.3 20 2.5 0 0 4 6 12 8 20 24 95 10329 VZ - Z-Voltage (V) 95 9604 Figure 7. Z-Current vs. Z-Voltage Figure 10. Board for RthJA Definition (in mm) 50 IZ - Z-Current (mA) Reflow Soldering Ptot = 500 mW Tamb = 25 °C 40 30 1.2 20 10 0.8 0.8 0.8 0 15 20 25 30 35 2.4 16773 VZ - Z-Voltage (V) 95 9607 Figure 8. Z-Current vs. Z-Voltage Figure 11. Recommended Foot Pads (in mm) rZ - Differential Z-Resistance (Ω) 1000 Wave Soldering IZ = 1 mA 100 1.4 5 mA 10 10 mA 0.9 1.0 0.9 Tj = 25 °C 1 0 95 9606 5 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage Document Number 85597 Rev. 2.0, 26-Aug-10 16774 2.8 Figure 12. Recommended Foot Pads (in mm) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 BZM55-Series Zthp - Thermal Resistance for Pulse Cond. (KW) Vishay Semiconductors 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse RthJA = 300 K/W T = Tjmax - Tamb 10 tp/T = 0.01 tp/T = 0.1 tp/T = 0.02 tp/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 102 95 9603 tp - Pulse Length (ms) Figure 13. Thermal Response Package Dimensions in millimeters (inches): MicroMELF 0.6 (0.024) * 1.1 (0.043) 1.2 (0.047) < 1. surface plan gl 1 (0.039) 35 ( as 0.0 s 53 ) surface plan Cathode indification 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass 2 (0.079) 1.8 (0.071) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Wave soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 0.8 (0.031) Reflow soldering 0.8 (0.031) 1 (0.039) Created - Date: 26.July.1996 Rev. 13 - Date: 07.June.2006 Document no.:6.560-5007.01-4 96 12072 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number 85597 Rev. 2.0, 26-Aug-10 [email protected], [email protected], [email protected] Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1