RECTRON FMMT491

RECTRON
FMMT491
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.5
W (Tamb=25OC)
* Collector current
ICM :
1
A
* Collector-base voltage
V(BR)CBO :
80
V
* Operating and storage junction temperature range
O
O
TJ,Tstg: -55 C to +150 C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
Marking: 491
0.055(1.40)
0.047(1.20)
1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.019(2.00)
0.071(1.80)
O
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase , half wave, 60H Z , resistive or inductive load.
1
3
0.118(3.00)
0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted )
SYMBOL
MIN
TYP
MAX
UNITS
Collector-base breakdown voltage (IC= 100mA, IE=0)
CHARACTERISTICS
V(BR)CBO
80
-
-
V
Collector-emitter breakdown voltage (IC= 10mA, IB=0) (Note 1)
V(BR)CEO
60
-
-
V
Emitter-base breakdown voltage (IE= 100mA, IC=0)
V(BR)EBO
5
-
-
V
Collector cut-off current (VCB= 60V, IE=0)
ICBO
-
-
0.1
mA
Emitter cut-off current (VEB= 4V, IC=0)
IEBO
-
-
0.1
mA
DC current gain (VCE= 5V, IC= 1mA)
hFE(1)
100
-
-
-
DC current gain (VCE= 5V, IC= 500mA) (Note 1)
hFE(2)
100
-
300
-
DC current gain (VCE= 5V, IC= 1A) (Note 1)
hFE(3)
80
-
-
-
DC current gain (VCE= 5V, IC= 2A) (Note 1)
hFE(4)
30
-
-
-
Collector-emitter saturation voltage (IC= 500mA, IB= 50mA) (Note 1)
VCE(sat)1
-
-
0.25
V
Collector-emitter saturation voltage (IC= 1A, IB= 100mA) (Note 1)
VCE(sat)2
-
-
0.5
V
Base-emitter saturation voltage (IC= 1A, IB= 100mA) (Note 1)
VBE(sat)
-
-
1.1
V
VBE
-
-
1
V
fT
150
-
-
MHZ
Cob
-
-
10
Base-emitter voltage ((VCE= 5V, IC= 1A) (Note 1)
Transition frequency (VCE= 10V, IC= 50mA, f=100MHZ)
Collector output capactitance (VCB= 10V, f=1MHZ)
Notes 1: Measured under pulsed conditions, Pulse width=300ms, Duty cycle < 2%.
2: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
pF
2006-3
RATING AND CHARACTERISTICS CURVES ( FMMT491 )
0.6
O
+25 C
0.5
0.5
0.4
0.4
VCE(sat) - (V)
VCE(sat) - (V)
0.6
0.3
Ic / IB=10
Ic / IB=50
0.2
0.3
O
-55 C
O
+25 C
O
+100 C
0.2
0.1
0
Ic / IB=10
0.1
1mA
10mA
100mA
1A
0
10A
1mA
10mA
Ic - COLLECTOR CURRENT
Figure1 VCE(sat) vs IC
400
100mA
1A
10A
Ic - COLLECTOR CURRENT
Figure2 VCE(sat) vs IC
Vce= 5V
Ic / IB=10
O
300
+100 C
200
+25 C
100
0.8
VBE(sat) - (V)
hFE - Typical Gain
1.0
O
0.6
O
-55 C
O
+25 C
O
+100 C
0.4
O
-55 C
0.2
0
1mA
10mA
100mA
1A
Ic - COLLECTOR CURRENT
0
10A
1mA
Figure3 hFE vs IC
Vce= 5V
VBE(on) - (V)
0.8
0.6
O
-55 C
O
+25 C
O
+100 C
0.4
0.2
1mA
1A
10A
Figure4 VBE(sat) vs IC
1.0
0
100mA
Ic - COLLECTOR CURRENT
10
IC - COLLECTOR CURRENT (A)
1.2
10mA
10mA
100mA
1A
IC - COLLECTOR CURRENT
Figure5 VBE(on) vs IC
10A
1
DC
1s
100ms
10ms
1ms
100us
0.1
0.01
0.1V
1V
10V
VCE - COLLECTOR-EMITTER VOLTAGE (V)
100V
Figure6 Safe Operating Area
RECTRON
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contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
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