RECTRON MMBTA56

MMBTA56
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.225
W(Tamb=25OC)
* Collector current
ICM :
-0.5
A
* Collector-base voltage
VCBO :
-80
V
* Operating and storage junction temperature range
TJ,Tstg:
-55OC to +150OC
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
1
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.019(2.00)
0.071(1.80)
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
0.004(0.10)
0.000(0.00)
1
3
0.118(3.00)
0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
SYMBOL
MIN
TYP
MAX
UNITS
Collector - Base Breakdown Voltage (IC=-100 uA, IE =0)
CHARACTERISTICS
V(BR)CBO
-80
-
-
V
Collector - Emitter Breakdown Voltage(IC= -1mA, IB=0)
V(BR)CEO
-80
-
-
V
Emitter - Base Breakdown Voltage (IE= -100 uA, IC = 0)
V
V(BR)EBO
-4
-
-
Collector Cut - Off Current (VCB= -80V, IE=0)
ICBO
-
-
-0.1
Collector Cut - Off Current (VCE= -60V, IB=0)
ICEO
-
-
-0.1
DC Current Gain(VCE= -1V, IC= -100mA)
hFE
100
-
-
-
Collector - Emitter Saturation Voltage(IC= -100 mA, IB= -10mA)
VCE(sat)
-
-
-0.25
V
Base - Emitter on Voltage(VCE=-1V,IC=-100mA)
VBE(on)
-
-
-1.2
V
fT
50
-
-
MHz
Transition Frequency(VCE= -1V, IC= -100mA, f =100MHz)
Marking
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
2GM
2007-3
300
VCE= 1V
250
125 OC
200
25 OC
150
-40 OC
100
50
0
0.001
0.01
0.1
1
VCE(SAT), COLLECTOR-EMITTER VOLTAGE, (V)
hFE, TYPICAL PULSED CURRENT GAIN
RATING AND CHARACTERISTICS CURVES ( MMBTA56 )
0.8
b =10
0.6
0.4
25 OC
0.2
125 OC
0
10
1.2
b =10
1.0
-40 OC
25 OC
0.8
125 OC
0.6
0.4
10
100
1000
100
IC, COLLECTOR CURRENT, (A)
VBE(ON), BASE-EMITTER ON VOLTAGE, (V)
VBE(SAT), BASE-EMITTER VOLTAGE, (V)
IC, COLLECTOR CURRENT, (A)
FIG.1 TYPICAL PULSE CURRENT GAIN
vs. COLLECTOR CURRENT
-40 OC
1.2
FIG.2 COLLECTOR-EMITTER SATURATION
VOLTAGE vs. COLLECTOR CURRENT
1.0
-40 OC
0.8
25 OC
0.6
125 OC
0.4
0.2
VCE= 1V
0
0.1
1
ICBO, COLLECTOR CURRENT, (nA)
10
1
0.1
0.01
0.001
VCB= 80V
25
50
75
100
TA, AMBIENT TEMPERATURE, ( C)
O
FIG.5 COLLECTOR-CUTOFF CURRENT
vs. AMBIENT TEMPERATURE
100
1000
IC, COLLECTOR CURRENT, (A)
FIG.3 BASE-EMITTER SATURATION VOLTAGE
vs. COLLECTOR CURRENT
125
VCE, COLLECTOR-EMITTER VOLTAGE, (V)
IC, COLLECTOR CURRENT, (mA)
10
FIG.4 BASE-EMITTER ON VOLTAGE vs.
COLLECTOR CURRENT
10
TA= 25OC
8
6
100mA
4
10mA
2 IC= 1mA
0
3
5
10
20
30
50
IB, BASE CURRENT, (mA)
FIG.6 COLLECTOR SATURATION REGION
RATING AND CHARACTERISTICS CURVES ( MMBTA56 )
CAPACITANCE, (pF)
100
Cib
Cob
0.1
1
10
40
f T, GAIN BANDWIDTH PRODUCT, (MHz)
f =1.0MHz
VCE= 5V
30
20
10
0
100
1
10
20
50
VCE, COLLECTOR VOLTAGE, (V)
IC, COLLECTOR CURRENT, (mA)
FIG.7 INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE
FIG.8 GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
PD, POWER DISSIPATION, (W)
1
0.75
0.5
0.25
0
0
25
50
75
100
125
TEMPERATURE, (OC)
FIG.9 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
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Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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