RHOMBUS-IND T-886G

xDSL Transformer
Reinforced Insulation Per EN 41003/EN 60950
Turns Ratio ( + 3 % )
Schematic Diagram
1:2.1:2:2
PARAMETER
MIN.
NOM.
MAX.
UNITS
1
Inductance
(1-3)
25
µH
1
Inductance
(2-4)
110
µH
1
Inductance
(7-9)
100
µH
1
Inductance
(8-10)
100
µH
P ri
Sec
1
Leakage Inductance
(1-3) with 2,4 7,9,8,10 shorted
.5
µH
.
1 : 2.1 : 2 : 2
(1-3, 2-4, 10-8, 9-7)
1
Interwinding Capacitance
(Between primary & secondary)
25
pF
Resistance (1-3)
.5
Ω
Resistance (2-4)
1.0
Ω
Resistance (7-10) 8,9 shorted
2.0
Ω
0.5
3.0
-85
-60
2
dB
dB
dB
dB
mA
Isolation (Hi-Pot)
VRMS
3000
Insertion loss 40 KHZ to 1.5 MHz
Insertion loss 30 KHZ to 2.0 MHz
THD 15 Vp-p @ 100 KHZ
2
Longitudinal balance
DC Bias
1
Tested @ 100kHz & 100 mVRMS
2
Tested at 20 KHZ to 1 MHZ
Physical
Dimensions
inches (mm)
Unused Pins
Omitted
RHOMBUS P/N: T-886G
CUST P/N:
DATE: 1/27/97
Rhombus
Industries Inc.
Transformers & Magnetic Products
FSCM No.
16714
NAME: GLOBESPAN
SHEET:
1 of 1
15801 Chemical Lane, Huntington Beach, CA 92649
Phone: (714) 898-0960
FAX: (714) 896-0971