ROITHNER FL850-03-80

FL850-03-80
High Power type LED
FL850-03-80 is an AlGaAs LED mounted on a lead frame and molded with super beam lens.
On forward bias, it emits a band of visible light which peaks 850nm.
These devices are intended to be operated at pulsed current of 4A under maximum 4.5V
for stable long life.
♦Outer dimension (Unit: mm)
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Peak Wavelength
4) Package
(1) Type
(2) Resin Material
(3) Lead Frame
Super Flux mold type LED
FL850-03-80
GaAlAs
800um*800um
850nm typ.
Super Beam type LED
Epoxy Resin
Soldered
♦Absolute Maximum Ratings
Item
Symbol
Maximum Rated Value
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
PD
IF
IFP
VR
TOPR
TSTG
TSOL
310
200
4000
10
-30 ~ +85
-30 ~ +100
260
Unit
mW
mA
mA
V
°C
°C
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical Characteristics
Item
Forward Voltage
Pulsed Forward Voltage
Reverse Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
[Ta=25°C]
Symbol
Condition
VF
VF
IR
PO
IE
λP
∆λ
θ 1/2
tr
tf
IF=100mA
IFP=4A
VR=10V
IF=100mA
IF=100mA
IF=50mA
IF=50mA
IF=50mA
IF=50mA
IF=50mA
Minimum
35.0
840
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
Maximum
Unit
1.4
3.3
1.5
4.5
10
V
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
60.0
230
850
40
±8
15
10
860