SavantIC Semiconductor Product Specification 2N5676 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·High transition frequency APPLICATIONS ·For use as high-frequency drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -125 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -2 A 2 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification 2N5676 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.2 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.2 V ICEO Collector cut-off current VCE=-50V; IB=0 -0.5 mA ICBO Collector cut-off current VCB=-125V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-0.1A ; VCE=-5V 50 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 50 Transition frequency IC=-100mA;VCE=10V 50 fT CONDITIONS 2 MIN TYP. MAX -100 UNIT V 150 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2N5676