SavantIC Semiconductor Product Specification 2N6674 2N6675 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N6674 VCBO 300 Open base 2N6675 VEBO V 650 2N6674 Collector-emitter voltage Emitter-base voltage UNIT 450 Open emitter Collector-base voltage 2N6675 VCEO VALUE V 400 Open collector 7 V IC Collector current 15 A IB Base current 5 A PT Total Power Dissipation Ta=25 6 TC=25 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification 2N6674 2N6675 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6674 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 300 V IC=0.2A ;IB=0 400 2N6675 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=5A 5.0 V Base-emitter saturation voltage IC=10A; IB=2A 1.5 V 0.1 mA 1.0 mA VBEsat 2N6674 ICBO VCB=450V; IE=0 Collector cut-off current 2N6675 VCB=650V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=1A ; VCE=3V 15 40 hFE-2 DC current gain IC=10A ; VCE=2V 8 20 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT 2 15 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6674 2N6675