SavantIC Semiconductor Product Specification 2SB407 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -10 V -7 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB407 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -10 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.0 V VBEsat Base-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-10V; IC=0 -10 µA hFE DC current gain IC=-1A ; VCE=-1.5V 2 MIN 80 TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB407