SAVANTIC 2SB763

SavantIC Semiconductor
Product Specification
2SB763
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD858
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-.60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
-5
A
60
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB763
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;iB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.3A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-3A ;IB=-0.3A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-4V
40
hFE-2
DC current gain
IC=-3A ; VCE=-4V
20
2
MIN
TYP.
MAX
250
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SB763