SavantIC Semiconductor Product Specification 2SB506 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·Low frequency power amplification ·Power switching application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V -5 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 100 Tstg Storage temperature -55~100 TC=25 SavantIC Semiconductor Product Specification 2SB506 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-0.3A ; VCE=-10V fT CONDITIONS 2 MIN TYP. 35 MAX UNIT 200 20 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB506