SAVANTIC 2SC1111

SavantIC Semiconductor
Product Specification
2SC1111
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=? )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
6
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
?
Tstg
Storage temperature
-55~150
?
TC=25?
SavantIC Semiconductor
Product Specification
2SC1111
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=140V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Output capacitance
IE=0 ; VCB=10V, f=1MHz
VCEsat
CONDITIONS
2
MIN
TYP.
30
UNIT
150
10
115
MAX
MHz
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC1111