SavantIC Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplification ·For low speed and power switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -70 V VEBO Emitter-base voltage Open collector -5 V -5 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB550 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-0.1A ; VCE=-10V fT 2 30 200 5 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB550