SAVANTIC 2SA1513

SavantIC Semiconductor
Product Specification
2SA1513
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PML package
·High current capability
·Low collector saturation voltage
APPLICATIONS
·For high speed and high power
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
-15
A
IC
Collector current
Ta=25
PC
3.5
W
Collector power dissipation
TC=25
60
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA1513
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-12 A;IB=-0.6 A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-12 A;IB=-0.6 A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
µA
hFE
DC current gain
IC=-3A ; VCE=-2V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
300
pF
fT
Transition frequency
IC=-1.5A ; VCE=-10V
80
MHz
2
MIN
TYP.
100
MAX
UNIT
400
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA1513